{"id":"https://openalex.org/W2293721951","doi":"https://doi.org/10.1109/nems.2015.7147449","title":"Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant","display_name":"Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W2293721951","doi":"https://doi.org/10.1109/nems.2015.7147449","mag":"2293721951"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2015.7147449","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2015.7147449","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087915591","display_name":"Sheikh Z. Ahmed","orcid":"https://orcid.org/0000-0001-8922-514X"},"institutions":[{"id":"https://openalex.org/I5518804","display_name":"BRAC University","ror":"https://ror.org/00sge8677","country_code":"BD","type":"education","lineage":["https://openalex.org/I5518804"]}],"countries":["BD"],"is_corresponding":true,"raw_author_name":"Sheikh Ziauddin Ahmed","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh","institution_ids":["https://openalex.org/I5518804"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028528085","display_name":"Mashiyat Sumaiya Shawkat","orcid":"https://orcid.org/0000-0001-6594-190X"},"institutions":[{"id":"https://openalex.org/I5518804","display_name":"BRAC University","ror":"https://ror.org/00sge8677","country_code":"BD","type":"education","lineage":["https://openalex.org/I5518804"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Mashiyat Sumaiya Shawkat","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh","institution_ids":["https://openalex.org/I5518804"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007192497","display_name":"Md. Iramul Hoque Chowdhury","orcid":null},"institutions":[{"id":"https://openalex.org/I5518804","display_name":"BRAC University","ror":"https://ror.org/00sge8677","country_code":"BD","type":"education","lineage":["https://openalex.org/I5518804"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Md. Iramul Hoque Chowdhury","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, BRAC University, Dhaka, Bangladesh","institution_ids":["https://openalex.org/I5518804"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110265642","display_name":"Sharif Mohammad Mominuzzaman","orcid":null},"institutions":[{"id":"https://openalex.org/I183697816","display_name":"Bangladesh University of Engineering and Technology","ror":"https://ror.org/05a1qpv97","country_code":"BD","type":"education","lineage":["https://openalex.org/I183697816"]}],"countries":["BD"],"is_corresponding":false,"raw_author_name":"Sharif Mohammad Mominuzzaman","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh","institution_ids":["https://openalex.org/I183697816"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5087915591"],"corresponding_institution_ids":["https://openalex.org/I5518804"],"apc_list":null,"apc_paid":null,"fwci":0.4199,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.61237093,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"384","last_page":"387"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7206129431724548},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.7067576050758362},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6538641452789307},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5470489263534546},{"id":"https://openalex.org/keywords/constant-voltage","display_name":"Constant voltage","score":0.5241085290908813},{"id":"https://openalex.org/keywords/constant","display_name":"Constant (computer programming)","score":0.5225017666816711},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.5083367228507996},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5063949823379517},{"id":"https://openalex.org/keywords/constant-current","display_name":"Constant current","score":0.4244581162929535},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24924787878990173},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.10677638649940491},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08721306920051575},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08043378591537476},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.06275790929794312},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.056831300258636475}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7206129431724548},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.7067576050758362},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6538641452789307},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5470489263534546},{"id":"https://openalex.org/C2987546979","wikidata":"https://www.wikidata.org/wiki/Q5163674","display_name":"Constant voltage","level":3,"score":0.5241085290908813},{"id":"https://openalex.org/C2777027219","wikidata":"https://www.wikidata.org/wiki/Q1284190","display_name":"Constant (computer programming)","level":2,"score":0.5225017666816711},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.5083367228507996},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5063949823379517},{"id":"https://openalex.org/C53392680","wikidata":"https://www.wikidata.org/wiki/Q5163647","display_name":"Constant current","level":3,"score":0.4244581162929535},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24924787878990173},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.10677638649940491},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08721306920051575},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08043378591537476},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.06275790929794312},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.056831300258636475},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/nems.2015.7147449","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2015.7147449","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},{"id":"pmh:oai:localhost:10361/7007","is_oa":false,"landing_page_url":"http://hdl.handle.net/10361/7007","pdf_url":null,"source":{"id":"https://openalex.org/S4306402122","display_name":"BRAC University Institutional Repository (BRAC University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I5518804","host_organization_name":"BRAC University","host_organization_lineage":["https://openalex.org/I5518804"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference Paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4300000071525574,"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3127524829","https://openalex.org/W2367039276","https://openalex.org/W2034540569","https://openalex.org/W2047263735","https://openalex.org/W2361247083","https://openalex.org/W3211956537","https://openalex.org/W2054189856","https://openalex.org/W2249521748","https://openalex.org/W2369867491","https://openalex.org/W2019053826"],"abstract_inverted_index":{"Graphene":[0,56],"Nanoribbon":[1,57],"(GNR)":[2],"and":[3,29,61,69,120,130,140],"Carbon":[4,62],"Nanotube":[5,63],"(CNT)":[6],"are":[7,128],"currently":[8],"being":[9],"considered":[10],"as":[11],"two":[12,75],"of":[13,37,45,52,124,138],"the":[14,35,43,50,74,102,118,126,136],"most":[15],"promising":[16],"options":[17],"to":[18,94,112,132],"replace":[19],"silicon":[20],"technology.":[21,39],"Silicon":[22],"technology":[23],"is":[24,67,77],"faced":[25],"with":[26,88],"scaling":[27],"limits":[28],"other":[30],"material":[31,87],"issues":[32],"which":[33],"hinder":[34],"development":[36],"transistor":[38,59,65],"In":[40],"this":[41,116],"paper,":[42],"effect":[44],"relative":[46,90],"dielectric":[47,91],"constant":[48,92],"on":[49,119],"performances":[51,137],"ballistic":[53],"schottky":[54],"barrier":[55],"field-effect":[58,64],"(GNRFET)":[60],"(CNTFET)":[66],"studied":[68],"a":[70,85,95],"comparative":[71],"analysis":[72],"between":[73,135],"transistors":[76,127],"provided.":[78],"It":[79],"has":[80,106],"been":[81],"observed":[82],"that":[83],"using":[84],"gate":[86],"higher":[89,96,107],"leads":[93],"on-state":[97,108],"drain":[98,109],"current":[99,110,122],"for":[100],"both":[101,125],"transistors.":[103],"However,":[104],"CNTFET":[105],"compared":[111],"GNRFET.":[113],"Also":[114],"in":[115],"literature,":[117],"off-state":[121],"ratios":[123],"calculated":[129],"plotted":[131],"further":[133],"differentiate":[134],"GNRFET":[139],"CNTFET.":[141]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":3}],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2025-10-10T00:00:00"}