{"id":"https://openalex.org/W2090713648","doi":"https://doi.org/10.1109/nems.2014.6908874","title":"Evaluation of Au/a-Si eutectic wafer level bonding process","display_name":"Evaluation of Au/a-Si eutectic wafer level bonding process","publication_year":2014,"publication_date":"2014-04-01","ids":{"openalex":"https://openalex.org/W2090713648","doi":"https://doi.org/10.1109/nems.2014.6908874","mag":"2090713648"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2014.6908874","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2014.6908874","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021712995","display_name":"Xian Huang","orcid":"https://orcid.org/0000-0002-8788-9185"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210128628","display_name":"Peking University Shenzhen Hospital","ror":"https://ror.org/03kkjyb15","country_code":"CN","type":"healthcare","lineage":["https://openalex.org/I4210128628"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xian Huang","raw_affiliation_strings":["Instituted of Microelectronics, Peking University, Beijing, P. R. China","Shenzhen Graduate School, Peking University, Shenzhen, P.R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituted of Microelectronics, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Shenzhen Graduate School, Peking University, Shenzhen, P.R. China","institution_ids":["https://openalex.org/I4210128628"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036788059","display_name":"Jun He","orcid":"https://orcid.org/0000-0002-4353-5123"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun He","raw_affiliation_strings":["Instituted of Microelectronics, Peking University, Beijing, P. R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituted of Microelectronics, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100425724","display_name":"Li Zhang","orcid":"https://orcid.org/0000-0003-2039-2526"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Li Zhang","raw_affiliation_strings":["Instituted of Microelectronics, Peking University, Beijing, P. R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituted of Microelectronics, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103142213","display_name":"Fang Yang","orcid":"https://orcid.org/0000-0002-7138-6807"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fang Yang","raw_affiliation_strings":["Instituted of Microelectronics, Peking University, Beijing, P. R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituted of Microelectronics, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064674645","display_name":"Dacheng Zhang","orcid":"https://orcid.org/0000-0002-3614-6605"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dacheng Zhang","raw_affiliation_strings":["Instituted of Microelectronics, Peking University, Beijing, P. R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituted of Microelectronics, Peking University, Beijing, P. R. China","institution_ids":["https://openalex.org/I20231570"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2129,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.61583693,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"560","last_page":"563"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8190979957580566},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.8085189461708069},{"id":"https://openalex.org/keywords/eutectic-system","display_name":"Eutectic system","score":0.7946068048477173},{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"Wafer bonding","score":0.701508641242981},{"id":"https://openalex.org/keywords/anodic-bonding","display_name":"Anodic bonding","score":0.698318362236023},{"id":"https://openalex.org/keywords/eutectic-bonding","display_name":"Eutectic bonding","score":0.6569050550460815},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.6348318457603455},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5807925462722778},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4861893057823181},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"Amorphous silicon","score":0.4255865812301636},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.4220907390117645},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.3946779668331146},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3185393810272217},{"id":"https://openalex.org/keywords/crystalline-silicon","display_name":"Crystalline silicon","score":0.2539117932319641},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.22259068489074707},{"id":"https://openalex.org/keywords/microstructure","display_name":"Microstructure","score":0.14323225617408752},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.04943656921386719}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8190979957580566},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.8085189461708069},{"id":"https://openalex.org/C18168003","wikidata":"https://www.wikidata.org/wiki/Q628595","display_name":"Eutectic system","level":3,"score":0.7946068048477173},{"id":"https://openalex.org/C2779133538","wikidata":"https://www.wikidata.org/wiki/Q677010","display_name":"Wafer bonding","level":3,"score":0.701508641242981},{"id":"https://openalex.org/C201414436","wikidata":"https://www.wikidata.org/wiki/Q567503","display_name":"Anodic bonding","level":3,"score":0.698318362236023},{"id":"https://openalex.org/C37487178","wikidata":"https://www.wikidata.org/wiki/Q5414402","display_name":"Eutectic bonding","level":4,"score":0.6569050550460815},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6348318457603455},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5807925462722778},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4861893057823181},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.4255865812301636},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4220907390117645},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.3946779668331146},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3185393810272217},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.2539117932319641},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.22259068489074707},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.14323225617408752},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.04943656921386719}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2014.6908874","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2014.6908874","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1987554316","https://openalex.org/W1996316687","https://openalex.org/W2000517130","https://openalex.org/W2017814565","https://openalex.org/W2027619615","https://openalex.org/W2056828898","https://openalex.org/W2096163576","https://openalex.org/W2140047559","https://openalex.org/W2144759212","https://openalex.org/W2154691542"],"related_works":["https://openalex.org/W2017991883","https://openalex.org/W1974416204","https://openalex.org/W4235993101","https://openalex.org/W2291092321","https://openalex.org/W2124036996","https://openalex.org/W2115430288","https://openalex.org/W1589746763","https://openalex.org/W4255735705","https://openalex.org/W4231445806","https://openalex.org/W4251182130"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"new":[4],"method":[5],"for":[6,60],"achieving":[7],"Au/aSi":[8],"(amorphous":[9],"Si)":[10],"eutectic":[11],"wafer-level":[12],"bonding.":[13,111],"The":[14,34,66,80],"Si-Glass":[15],"wafer":[16,26],"bonding":[17,64,101],"was":[18,38,56,73],"conducted":[19],"with":[20,86,107],"Au":[21],"layer":[22,30],"patterned":[23],"on":[24,31],"glass":[25],"and":[27,58],"amorphous":[28,35],"Si":[29,36],"silicon":[32,44],"wafer.":[33],"here":[37],"transformed":[39],"from":[40],"the":[41,46,70,76,83,89,99,108],"single":[42],"crystal":[43],"by":[45],"Argon":[47],"implantation":[48],"process.":[49,79],"A":[50],"novel":[51],"torsional":[52],"strength":[53],"test":[54],"structure":[55],"proposed":[57],"applied":[59],"characterization":[61],"of":[62,69,82],"Au/Si":[63,84],"strength.":[65],"anti-corrosion":[67],"property":[68],"bonded":[71],"wafers":[72],"evaluated":[74],"in":[75,94],"KOH":[77],"thinning":[78],"performance":[81,105],"bond":[85,90],"respect":[87],"to":[88],"area":[91],"were":[92],"studied":[93],"detail.":[95],"Results":[96],"indicated":[97],"that":[98],"Au/a-Si":[100],"exhibited":[102],"much":[103],"better":[104],"compared":[106],"conventional":[109],"Au/c-Si":[110]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}
