{"id":"https://openalex.org/W2134534280","doi":"https://doi.org/10.1109/nems.2009.5068669","title":"Memory characteristics of double-layer metal and semiconductor heterogeneous nanocrystals embedded in SiO&lt;inf&gt;2&lt;/inf&gt;","display_name":"Memory characteristics of double-layer metal and semiconductor heterogeneous nanocrystals embedded in SiO&lt;inf&gt;2&lt;/inf&gt;","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W2134534280","doi":"https://doi.org/10.1109/nems.2009.5068669","mag":"2134534280"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2009.5068669","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068669","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066736115","display_name":"Ni Henan","orcid":null},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Henan Ni","raw_affiliation_strings":["Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong university, Shanghai, China","Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, 200030, China"],"affiliations":[{"raw_affiliation_string":"Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong university, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]},{"raw_affiliation_string":"Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, 200030, China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010500633","display_name":"Liangcai Wu","orcid":"https://orcid.org/0000-0003-3734-8417"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liangcai Wu","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy and Sciences, Shanghai, China","Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, CHINA"],"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy and Sciences, Shanghai, China","institution_ids":["https://openalex.org/I4210147322"]},{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, CHINA","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100366515","display_name":"Zhitang Song","orcid":"https://orcid.org/0000-0001-7859-9429"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhitang Song","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy and Sciences, Shanghai, China","Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, CHINA"],"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy and Sciences, Shanghai, China","institution_ids":["https://openalex.org/I4210147322"]},{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, CHINA","institution_ids":["https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111689362","display_name":"Chun Hui","orcid":null},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chun Hui","raw_affiliation_strings":["College of Life Science Biotechnology, Shanghai Jiaotong university, Shanghai, China","College of Life Science Biotechnology, Shanghai Jiaotong University, 200030, China"],"affiliations":[{"raw_affiliation_string":"College of Life Science Biotechnology, Shanghai Jiaotong university, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]},{"raw_affiliation_string":"College of Life Science Biotechnology, Shanghai Jiaotong University, 200030, China","institution_ids":["https://openalex.org/I183067930"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5066736115"],"corresponding_institution_ids":["https://openalex.org/I183067930"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.15118055,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"672","last_page":"675"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanocrystal","display_name":"Nanocrystal","score":0.8813300728797913},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.754713237285614},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.7090787291526794},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.6078600287437439},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.5772128701210022},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5498072504997253},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.534841001033783},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5171093940734863},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.5165182948112488},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5062752962112427},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4215197265148163},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.27914923429489136},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.14757990837097168},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.09184059500694275}],"concepts":[{"id":"https://openalex.org/C175854130","wikidata":"https://www.wikidata.org/wiki/Q98276914","display_name":"Nanocrystal","level":2,"score":0.8813300728797913},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.754713237285614},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.7090787291526794},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6078600287437439},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.5772128701210022},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5498072504997253},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.534841001033783},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5171093940734863},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5165182948112488},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5062752962112427},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4215197265148163},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.27914923429489136},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.14757990837097168},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.09184059500694275},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2009.5068669","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068669","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6800000071525574,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320337104","display_name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences","ror":"https://ror.org/04nytyj38"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1597588866","https://openalex.org/W2000337081","https://openalex.org/W2028760288","https://openalex.org/W2137207174","https://openalex.org/W2139025539","https://openalex.org/W2146830559","https://openalex.org/W2170323059","https://openalex.org/W2542113227","https://openalex.org/W4242210760","https://openalex.org/W6728568658"],"related_works":["https://openalex.org/W2378671336","https://openalex.org/W2285420483","https://openalex.org/W2087667942","https://openalex.org/W261116917","https://openalex.org/W2021625187","https://openalex.org/W2762411181","https://openalex.org/W2100191300","https://openalex.org/W2031595743","https://openalex.org/W4297232538","https://openalex.org/W2023277145"],"abstract_inverted_index":{"MOS":[0,46],"capacitor":[1,47],"structure":[2],"with":[3,48,65],"double-layer":[4,49],"heterogeneous":[5,50],"nanocrystals":[6,32,38,51,70,89],"consisting":[7],"of":[8,19],"metal":[9,69],"and":[10,25,33,58,106],"semiconductor":[11],"embedded":[12],"in":[13,39],"gate":[14],"oxide":[15],"for":[16],"the":[17,29,45,72,76,87,91,103,107],"applications":[18],"nonvolatile":[20],"memory":[21],"have":[22],"been":[23],"fabricated":[24],"characterized.":[26],"By":[27],"combining":[28],"self-assembled":[30],"Ni":[31],"vacuum":[34],"electron-beam":[35],"co-evaporated":[36],"Si":[37,88],"SiO":[40],"<inf":[41],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[42],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[43],"matrix,":[44],"can":[52],"appear":[53],"large":[54],"charge":[55,98],"storage":[56],"capacity":[57],"improved":[59],"retention":[60,104],"characteristics":[61],"compared":[62],"to":[63,80,101],"that":[64],"single-layer":[66],"nanocrystals.":[67],"The":[68],"at":[71,90],"lower":[73],"stack":[74,93],"enable":[75],"direct":[77],"tunneling":[78],"mechanism":[79],"obtain":[81],"larger":[82],"flat":[83,108],"voltage":[84,109],"shift,":[85],"while":[86],"upper":[92],"works":[94],"as":[95],"an":[96],"additional":[97],"trap":[99],"layer":[100],"enhance":[102],"time":[105],"shift.":[110]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}