{"id":"https://openalex.org/W2104425035","doi":"https://doi.org/10.1109/nems.2009.5068558","title":"Parameter characterization of anodic bonded electrical interconnect in MEMS/NEMS devices","display_name":"Parameter characterization of anodic bonded electrical interconnect in MEMS/NEMS devices","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W2104425035","doi":"https://doi.org/10.1109/nems.2009.5068558","mag":"2104425035"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2009.5068558","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068558","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073319106","display_name":"Xuejiao Fan","orcid":"https://orcid.org/0000-0001-6859-136X"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuejiao Fan","raw_affiliation_strings":["Institute of Microelectronics, Peking University, Beijing, China","Institute of Microelectronics , Peking University , Beijing 100871 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics , Peking University , Beijing 100871 , China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210089056","https://openalex.org/I4210119392"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064674645","display_name":"Dacheng Zhang","orcid":"https://orcid.org/0000-0002-3614-6605"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dacheng Zhang","raw_affiliation_strings":["Institute of Microelectronics, Peking University, Beijing, China","Institute of Microelectronics , Peking University , Beijing 100871 , China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Institute of Microelectronics , Peking University , Beijing 100871 , China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210089056","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"198","last_page":"201"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10923","display_name":"Force Microscopy Techniques and Applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.8793907165527344},{"id":"https://openalex.org/keywords/ohmic-contact","display_name":"Ohmic contact","score":0.8687179088592529},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.7085782289505005},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.665658712387085},{"id":"https://openalex.org/keywords/electrical-contacts","display_name":"Electrical contacts","score":0.6467519998550415},{"id":"https://openalex.org/keywords/anode","display_name":"Anode","score":0.644205629825592},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6364272832870483},{"id":"https://openalex.org/keywords/contact-angle","display_name":"Contact angle","score":0.5196372270584106},{"id":"https://openalex.org/keywords/contact-area","display_name":"Contact area","score":0.48118311166763306},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43487632274627686},{"id":"https://openalex.org/keywords/electrical-resistivity-and-conductivity","display_name":"Electrical resistivity and conductivity","score":0.433368980884552},{"id":"https://openalex.org/keywords/ohm","display_name":"Ohm","score":0.4190583825111389},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3879774510860443},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.37085843086242676},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3355681300163269},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.3164464235305786},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.3149418532848358},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.22694623470306396},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.20328181982040405},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.20317697525024414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13153794407844543},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11287948489189148}],"concepts":[{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.8793907165527344},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.8687179088592529},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.7085782289505005},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.665658712387085},{"id":"https://openalex.org/C132235601","wikidata":"https://www.wikidata.org/wiki/Q394001","display_name":"Electrical contacts","level":2,"score":0.6467519998550415},{"id":"https://openalex.org/C89395315","wikidata":"https://www.wikidata.org/wiki/Q181232","display_name":"Anode","level":3,"score":0.644205629825592},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6364272832870483},{"id":"https://openalex.org/C6556556","wikidata":"https://www.wikidata.org/wiki/Q899239","display_name":"Contact angle","level":2,"score":0.5196372270584106},{"id":"https://openalex.org/C33373654","wikidata":"https://www.wikidata.org/wiki/Q5164821","display_name":"Contact area","level":2,"score":0.48118311166763306},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43487632274627686},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.433368980884552},{"id":"https://openalex.org/C32211213","wikidata":"https://www.wikidata.org/wiki/Q47083","display_name":"Ohm","level":2,"score":0.4190583825111389},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3879774510860443},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37085843086242676},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3355681300163269},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3164464235305786},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3149418532848358},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22694623470306396},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.20328181982040405},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20317697525024414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13153794407844543},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11287948489189148},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2009.5068558","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068558","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1964263546","https://openalex.org/W1989238041","https://openalex.org/W1996811881","https://openalex.org/W2017728171","https://openalex.org/W2028953266","https://openalex.org/W2035052309","https://openalex.org/W2086608738","https://openalex.org/W2147554741"],"related_works":["https://openalex.org/W1975027344","https://openalex.org/W2017076333","https://openalex.org/W2051353231","https://openalex.org/W2095133813","https://openalex.org/W1977156920","https://openalex.org/W1965890915","https://openalex.org/W3015744687","https://openalex.org/W2080631918","https://openalex.org/W2743725414","https://openalex.org/W1965386992"],"abstract_inverted_index":{"The":[0,57,82,107,186],"approach":[1,35],"to":[2,36,43,69],"realize":[3,37],"the":[4,10,17,38,45,48,52,72,88,93,96,100,115,130,134,142,145,155,163,173,176,196,207,210],"electrical":[5,39],"interconnect":[6],"and":[7,19,63,99,112,169,209,220],"qualities":[8,46,187],"of":[9,21,47,87,120,144,175,188,198],"contact":[11,25,53,73,97,116,137,140,146,156,164,168,177,192],"have":[12],"a":[13,33,64],"direct":[14],"impact":[15],"on":[16],"performance":[18],"reliability":[20],"devices.":[22],"Herein,":[23],"Si-Au/Pt/Ti":[24],"structure":[26],"is":[27,55,61,67,138,147,165,178,193],"fabricated":[28],"using":[29],"anodic":[30,49,135,190],"bonding":[31],"as":[32,214],"novel":[34],"interconnect.":[40],"In":[41],"order":[42],"evaluate":[44],"bonded":[50,77,136,191],"contact,":[51],"resistance":[54,98,102,117],"extracted.":[56],"cross-bridge":[58],"Kelvin":[59,79],"method":[60,66,80,90,109],"optimized":[62],"new":[65],"presented":[68],"directly":[70,111],"measure":[71,114],"resistance,":[74],"named":[75],"four-terminals":[76],"vertical":[78],"(BVD).":[81],"two-dimensional":[83],"resistor":[84],"network":[85],"model":[86],"BVD":[89,108],"indicates":[91],"that":[92,133],"relationship":[94],"between":[95],"measured":[101],"can":[103,110],"be":[104],"easily":[105],"established.":[106],"precisely":[113],"since":[118],"kinds":[119],"interferences":[121],"from":[122,129],"parasitic":[123],"resistances":[124,205],"are":[125],"minimized.":[126],"Data":[127],"obtained":[128],"test":[131],"indicate":[132],"Ohmic":[139,167],"when":[141,172],"area":[143,174],"larger":[148],"than":[149,160,180],"15*20\u03bcm":[150,181],"<sup":[151,182],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[152,183],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[153,184],"with":[154,195],"length":[157],"not":[158,166,170],"smaller":[159,179],"15\u03bcm;":[161],"whereas,":[162],"stable":[171],".":[185],"small-size":[189],"related":[194],"effects":[197],"interfacial":[199,215],"states,":[200],"native":[201],"oxide":[202],"layer,":[203],"series":[204],"at":[206],"interface,":[208],"other":[211],"particularities":[212],"such":[213],"inter-diffusion,":[216],"Au/Si":[217],"eutectic":[218],"reaction":[219],"surface":[221],"topology.":[222]},"counts_by_year":[{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}