{"id":"https://openalex.org/W2100995197","doi":"https://doi.org/10.1109/nems.2009.5068514","title":"Performance comparison of methods to evading notching effect for SOG structures in DRIE","display_name":"Performance comparison of methods to evading notching effect for SOG structures in DRIE","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W2100995197","doi":"https://doi.org/10.1109/nems.2009.5068514","mag":"2100995197"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2009.5068514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068514","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100882645","display_name":"Haitao Ding","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Haitao Ding","raw_affiliation_strings":["National Key Laboratory oF Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory oF Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100864231","display_name":"Zhenchuan Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenchuan Yang","raw_affiliation_strings":["National Key Laboratory oF Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory oF Micro/Nano Fabrication Technology, Institute of Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108451030","display_name":"Guizhen Yan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guizhen Yan","raw_affiliation_strings":["Institute of Microelectronics, Peking University, China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Peking University, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100882645"],"corresponding_institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"],"apc_list":null,"apc_paid":null,"fwci":0.2991,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.63202378,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":"102","issue":null,"first_page":"5","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/notching","display_name":"Notching","score":0.9137635231018066},{"id":"https://openalex.org/keywords/deep-reactive-ion-etching","display_name":"Deep reactive-ion etching","score":0.8758964538574219},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.7619832754135132},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.7133892774581909},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7123886942863464},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.628058135509491},{"id":"https://openalex.org/keywords/sputtering","display_name":"Sputtering","score":0.6032997369766235},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.580700159072876},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5362675786018372},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.4555846154689789},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"Reactive-ion etching","score":0.41964191198349},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3338959217071533},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.3216252028942108},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2736210227012634},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.1424461007118225},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.13542723655700684},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09123295545578003}],"concepts":[{"id":"https://openalex.org/C169961218","wikidata":"https://www.wikidata.org/wiki/Q7062534","display_name":"Notching","level":2,"score":0.9137635231018066},{"id":"https://openalex.org/C124634506","wikidata":"https://www.wikidata.org/wiki/Q486936","display_name":"Deep reactive-ion etching","level":5,"score":0.8758964538574219},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7619832754135132},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7133892774581909},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7123886942863464},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.628058135509491},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.6032997369766235},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.580700159072876},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5362675786018372},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4555846154689789},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.41964191198349},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3338959217071533},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3216252028942108},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2736210227012634},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.1424461007118225},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13542723655700684},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09123295545578003},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2009.5068514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2009.5068514","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320324787","display_name":"Peking University","ror":"https://ror.org/02v51f717"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1972230366","https://openalex.org/W1993581340","https://openalex.org/W2000849966","https://openalex.org/W2009776833","https://openalex.org/W2031976277","https://openalex.org/W2066911573","https://openalex.org/W2094738966","https://openalex.org/W2358468346","https://openalex.org/W2537018592","https://openalex.org/W2946454824","https://openalex.org/W6729231548"],"related_works":["https://openalex.org/W2355748356","https://openalex.org/W2004460705","https://openalex.org/W1972613312","https://openalex.org/W2507729704","https://openalex.org/W3163667899","https://openalex.org/W2070736010","https://openalex.org/W2359313340","https://openalex.org/W1912896571","https://openalex.org/W4388376001","https://openalex.org/W2292233544"],"abstract_inverted_index":{"This":[0],"paper":[1],"experimentally":[2],"compared":[3],"the":[4,38,48,59,65,70,75,84,107,114,117],"performance":[5],"of":[6,40,50,78,83,119],"two":[7,23,85],"existing":[8],"anti-notching":[9],"methods":[10,24,86],"for":[11],"silicon":[12,44,79],"on":[13,64,74],"glass":[14,66],"structures":[15],"in":[16],"deep":[17],"reactive":[18],"ion":[19],"etching":[20,41],"process.":[21],"The":[22,53,81],"employed":[25],"a":[26,104],"same":[27],"concept,":[28],"by":[29,97],"sputtering":[30],"an":[31],"electrically":[32],"conducting":[33],"metal":[34],"layer":[35,60],"to":[36,43],"evacuate":[37],"charges":[39],"radicals":[42],"substrate":[45],"and":[46,89,94,116],"eliminate":[47],"buildup":[49],"electric":[51],"field.":[52],"difference":[54],"between":[55],"them":[56,99],"is":[57,61,110],"where":[58],"sputtered,":[62],"one":[63,72],"top":[67],"surface":[68,77],"whereas":[69],"other":[71],"right":[73],"bottom":[76],"structures.":[80],"effectiveness":[82],"was":[87],"characterized":[88],"studied":[90],"through":[91],"optical":[92],"measurement":[93],"electrical":[95],"test":[96],"applying":[98],"into":[100],"inertial":[101],"sensors,":[102],"demonstrating":[103],"result":[105],"that":[106],"latter":[108],"method":[109],"much":[111],"better":[112],"than":[113],"former,":[115],"reasons":[118],"which":[120],"are":[121],"discussed.":[122]},"counts_by_year":[{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}