{"id":"https://openalex.org/W2809344055","doi":"https://doi.org/10.1109/natw.2018.8388865","title":"Nanoscale silicon mosfet response to THz radiation for testing VLSI","display_name":"Nanoscale silicon mosfet response to THz radiation for testing VLSI","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2809344055","doi":"https://doi.org/10.1109/natw.2018.8388865","mag":"2809344055"},"language":"en","primary_location":{"id":"doi:10.1109/natw.2018.8388865","is_oa":false,"landing_page_url":"https://doi.org/10.1109/natw.2018.8388865","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 27th North Atlantic Test Workshop (NATW)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070091935","display_name":"M. S. Shur","orcid":"https://orcid.org/0000-0003-0976-6232"},"institutions":[{"id":"https://openalex.org/I4210136895","display_name":"Institute for the Future","ror":"https://ror.org/049tcsg76","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210136895"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Michael S. Shur","raw_affiliation_strings":["Electronics of the Future, Inc., Vienna, VA, USA"],"affiliations":[{"raw_affiliation_string":"Electronics of the Future, Inc., Vienna, VA, USA","institution_ids":["https://openalex.org/I4210136895"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066520750","display_name":"John Suarez","orcid":"https://orcid.org/0000-0001-6324-7391"},"institutions":[{"id":"https://openalex.org/I2802705668","display_name":"United States Army Combat Capabilities Development Command","ror":"https://ror.org/02rdkx920","country_code":"US","type":"other","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Suarez","raw_affiliation_strings":["U.S. Army RDECOM Communications-Electronics Research, Development, and Engineering Center (CERDEC), MD, USA"],"affiliations":[{"raw_affiliation_string":"U.S. Army RDECOM Communications-Electronics Research, Development, and Engineering Center (CERDEC), MD, USA","institution_ids":["https://openalex.org/I2802705668"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5070091935"],"corresponding_institution_ids":["https://openalex.org/I4210136895"],"apc_list":null,"apc_paid":null,"fwci":1.03,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.77918299,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7260640263557434},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.7255138158798218},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.6687046885490417},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.6255234479904175},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6202934980392456},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5564793348312378},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"Radiation hardening","score":0.5187468528747559},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5042966604232788},{"id":"https://openalex.org/keywords/feature","display_name":"Feature (linguistics)","score":0.4859108030796051},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4821002781391144},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.4318265914916992},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4072553515434265},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.338030606508255},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2563021183013916},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2303493320941925},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22350963950157166},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2036309540271759},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1765369474887848},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.1668161153793335},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09376361966133118},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09187468886375427}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7260640263557434},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.7255138158798218},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.6687046885490417},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6255234479904175},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6202934980392456},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5564793348312378},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.5187468528747559},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5042966604232788},{"id":"https://openalex.org/C2776401178","wikidata":"https://www.wikidata.org/wiki/Q12050496","display_name":"Feature (linguistics)","level":2,"score":0.4859108030796051},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4821002781391144},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.4318265914916992},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4072553515434265},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.338030606508255},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2563021183013916},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2303493320941925},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22350963950157166},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2036309540271759},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1765369474887848},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1668161153793335},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09376361966133118},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09187468886375427},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/natw.2018.8388865","is_oa":false,"landing_page_url":"https://doi.org/10.1109/natw.2018.8388865","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 27th North Atlantic Test Workshop (NATW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.41999998688697815}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":44,"referenced_works":["https://openalex.org/W1979682176","https://openalex.org/W1980464099","https://openalex.org/W1987776763","https://openalex.org/W1995928529","https://openalex.org/W2008349901","https://openalex.org/W2025470309","https://openalex.org/W2025901341","https://openalex.org/W2034010982","https://openalex.org/W2040828394","https://openalex.org/W2041726653","https://openalex.org/W2045517249","https://openalex.org/W2051840677","https://openalex.org/W2060199470","https://openalex.org/W2068608475","https://openalex.org/W2072306984","https://openalex.org/W2073173438","https://openalex.org/W2080419295","https://openalex.org/W2086015247","https://openalex.org/W2089751226","https://openalex.org/W2098030531","https://openalex.org/W2102662922","https://openalex.org/W2103147428","https://openalex.org/W2103966614","https://openalex.org/W2108190743","https://openalex.org/W2108355531","https://openalex.org/W2119047744","https://openalex.org/W2130868860","https://openalex.org/W2145149609","https://openalex.org/W2146364505","https://openalex.org/W2160233816","https://openalex.org/W2163857426","https://openalex.org/W2177041154","https://openalex.org/W2186871085","https://openalex.org/W2292650154","https://openalex.org/W2467677684","https://openalex.org/W2471675609","https://openalex.org/W2542228656","https://openalex.org/W2592973697","https://openalex.org/W2734740209","https://openalex.org/W2736258467","https://openalex.org/W2793633707","https://openalex.org/W3102921130","https://openalex.org/W4229797067","https://openalex.org/W6668604222"],"related_works":["https://openalex.org/W2353254830","https://openalex.org/W2033952283","https://openalex.org/W2351210568","https://openalex.org/W2762687161","https://openalex.org/W2890072373","https://openalex.org/W2105973023","https://openalex.org/W3000002614","https://openalex.org/W2800192479","https://openalex.org/W3040184894","https://openalex.org/W2045255589"],"abstract_inverted_index":{"The":[0],"increasing":[1],"complexity":[2],"of":[3,12,17,26,70],"silicon":[4],"VLSI":[5],"circuits":[6],"makes":[7],"their":[8],"comprehensive":[9],"testing,":[10],"determination":[11],"counterfeit":[13],"parts,":[14],"and":[15,31,38,56],"predictions":[16],"reliability":[18],"a":[19,68],"growing":[20],"challenge.":[21],"We":[22],"analyze":[23],"the":[24,71,76],"response":[25,52,74],"Si":[27],"MOSFETs":[28],"to":[29,49,75],"sub-THz":[30],"THz":[32,77],"radiation":[33,78],"for":[34,54,59],"different":[35],"feature":[36,60],"sizes":[37,61],"temperatures.":[39,81],"Our":[40],"results":[41],"show":[42],"that":[43],"such":[44],"testing":[45],"could":[46],"be":[47],"expanded":[48],"develop":[50],"unique":[51],"signatures":[53],"contact":[55],"channel":[57],"regions":[58],"exceeding":[62],"20":[63],"nm.":[64],"They":[65],"also":[66],"indicate":[67],"possibility":[69],"resonant":[72],"MOSFET":[73],"at":[79],"cryogenic":[80]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}