{"id":"https://openalex.org/W1592002842","doi":"https://doi.org/10.1109/nanoarch.2015.7180592","title":"Fast march tests for defects in resistive memory","display_name":"Fast march tests for defects in resistive memory","publication_year":2015,"publication_date":"2015-07-01","ids":{"openalex":"https://openalex.org/W1592002842","doi":"https://doi.org/10.1109/nanoarch.2015.7180592","mag":"1592002842"},"language":"en","primary_location":{"id":"doi:10.1109/nanoarch.2015.7180592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2015.7180592","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH\u00b415)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015570819","display_name":"Seyed Nima Mozaffari","orcid":"https://orcid.org/0000-0003-1719-6815"},"institutions":[{"id":"https://openalex.org/I110378019","display_name":"Southern Illinois University Carbondale","ror":"https://ror.org/049kefs16","country_code":"US","type":"education","lineage":["https://openalex.org/I110378019","https://openalex.org/I2801502357"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Seyed Nima Mozaffari","raw_affiliation_strings":["School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA","institution_ids":["https://openalex.org/I110378019"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083284025","display_name":"Spyros Tragoudas","orcid":"https://orcid.org/0009-0006-2575-3588"},"institutions":[{"id":"https://openalex.org/I110378019","display_name":"Southern Illinois University Carbondale","ror":"https://ror.org/049kefs16","country_code":"US","type":"education","lineage":["https://openalex.org/I110378019","https://openalex.org/I2801502357"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Spyros Tragoudas","raw_affiliation_strings":["School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA","institution_ids":["https://openalex.org/I110378019"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108640776","display_name":"Themistoklis Haniotakis","orcid":null},"institutions":[{"id":"https://openalex.org/I110378019","display_name":"Southern Illinois University Carbondale","ror":"https://ror.org/049kefs16","country_code":"US","type":"education","lineage":["https://openalex.org/I110378019","https://openalex.org/I2801502357"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Themistoklis Haniotakis","raw_affiliation_strings":["School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA","institution_ids":["https://openalex.org/I110378019"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5015570819"],"corresponding_institution_ids":["https://openalex.org/I110378019"],"apc_list":null,"apc_paid":null,"fwci":1.201,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.81144957,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"88","last_page":"93"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.8316124677658081},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.6253817677497864},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6100433468818665},{"id":"https://openalex.org/keywords/memory-test","display_name":"Memory test","score":0.5889103412628174},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3858487010002136},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.18546536564826965},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1372193992137909},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.12360900640487671},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11121359467506409}],"concepts":[{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.8316124677658081},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6253817677497864},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6100433468818665},{"id":"https://openalex.org/C3017990537","wikidata":"https://www.wikidata.org/wiki/Q6815759","display_name":"Memory test","level":3,"score":0.5889103412628174},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3858487010002136},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.18546536564826965},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1372193992137909},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.12360900640487671},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11121359467506409},{"id":"https://openalex.org/C169760540","wikidata":"https://www.wikidata.org/wiki/Q207011","display_name":"Neuroscience","level":1,"score":0.0},{"id":"https://openalex.org/C169900460","wikidata":"https://www.wikidata.org/wiki/Q2200417","display_name":"Cognition","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nanoarch.2015.7180592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2015.7180592","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH\u00b415)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1595368737","https://openalex.org/W1604482631","https://openalex.org/W1963919674","https://openalex.org/W1968288892","https://openalex.org/W1976905836","https://openalex.org/W1981141987","https://openalex.org/W1982533447","https://openalex.org/W1992975559","https://openalex.org/W2007898123","https://openalex.org/W2008901850","https://openalex.org/W2014161226","https://openalex.org/W2021216084","https://openalex.org/W2022208730","https://openalex.org/W2022318845","https://openalex.org/W2059323493","https://openalex.org/W2112181056","https://openalex.org/W2125223858","https://openalex.org/W2158369196","https://openalex.org/W2162651880","https://openalex.org/W2165911664","https://openalex.org/W2540206057","https://openalex.org/W4252884382","https://openalex.org/W6635424516"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2545245183","https://openalex.org/W2054635671","https://openalex.org/W2017425642","https://openalex.org/W2350916061","https://openalex.org/W1970117475","https://openalex.org/W4396815615","https://openalex.org/W3161624601","https://openalex.org/W2199653281"],"abstract_inverted_index":{"Resistive":[0],"Memory":[1],"is":[2,10,27,52,72],"a":[3],"promising":[4],"candidate":[5],"to":[6,12,16,59,66],"several":[7],"applications.":[8],"However,":[9],"prone":[11],"high":[13],"defects":[14,40],"due":[15],"the":[17,68],"nanoscale":[18],"fabrication":[19],"uncertainties.":[20],"Test":[21,49],"time":[22,51],"of":[23],"traditional":[24],"testing":[25],"techniques":[26],"dominated":[28],"by":[29,54],"writes":[30],"which":[31],"are":[32,44],"slower":[33],"than":[34],"reads.":[35],"Fast":[36],"March":[37],"tests":[38],"for":[39],"in":[41,46],"resistive":[42],"memory":[43],"proposed":[45],"this":[47],"paper.":[48],"application":[50],"reduced":[53],"approximately":[55],"96%":[56],"when":[57],"compared":[58],"existing":[60],"methods.":[61],"An":[62],"appropriate":[63],"DfT":[64],"scheme":[65],"implement":[67],"new":[69],"test":[70],"approach":[71],"also":[73],"proposed.":[74]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3}],"updated_date":"2026-03-25T13:04:00.132906","created_date":"2025-10-10T00:00:00"}