{"id":"https://openalex.org/W4255118777","doi":"https://doi.org/10.1109/nanoarch.2014.6880505","title":"A new Tunnel-FET based RAM concept for ultra-low power applications","display_name":"A new Tunnel-FET based RAM concept for ultra-low power applications","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W4255118777","doi":"https://doi.org/10.1109/nanoarch.2014.6880505"},"language":"en","primary_location":{"id":"doi:10.1109/nanoarch.2014.6880505","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880505","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100669533","display_name":"Md. Mostafizur Rahman","orcid":"https://orcid.org/0000-0002-5290-3821"},"institutions":[{"id":"https://openalex.org/I24603500","display_name":"University of Massachusetts Amherst","ror":"https://ror.org/0072zz521","country_code":"US","type":"education","lineage":["https://openalex.org/I24603500"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Mostafizur Rahman","raw_affiliation_strings":["The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA"],"affiliations":[{"raw_affiliation_string":"The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA","institution_ids":["https://openalex.org/I24603500"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100335533","display_name":"Mingyu Li","orcid":"https://orcid.org/0000-0002-6924-6872"},"institutions":[{"id":"https://openalex.org/I24603500","display_name":"University of Massachusetts Amherst","ror":"https://ror.org/0072zz521","country_code":"US","type":"education","lineage":["https://openalex.org/I24603500"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mingyu Li","raw_affiliation_strings":["The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA"],"affiliations":[{"raw_affiliation_string":"The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA","institution_ids":["https://openalex.org/I24603500"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058202082","display_name":"Jiajun Shi","orcid":"https://orcid.org/0000-0001-5194-0009"},"institutions":[{"id":"https://openalex.org/I24603500","display_name":"University of Massachusetts Amherst","ror":"https://ror.org/0072zz521","country_code":"US","type":"education","lineage":["https://openalex.org/I24603500"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jiajun Shi","raw_affiliation_strings":["The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA"],"affiliations":[{"raw_affiliation_string":"The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA","institution_ids":["https://openalex.org/I24603500"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074461869","display_name":"Santosh Khasanvis","orcid":null},"institutions":[{"id":"https://openalex.org/I24603500","display_name":"University of Massachusetts Amherst","ror":"https://ror.org/0072zz521","country_code":"US","type":"education","lineage":["https://openalex.org/I24603500"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Santosh Khasanvis","raw_affiliation_strings":["The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA"],"affiliations":[{"raw_affiliation_string":"The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA","institution_ids":["https://openalex.org/I24603500"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078885594","display_name":"C. Andras Moritz","orcid":null},"institutions":[{"id":"https://openalex.org/I24603500","display_name":"University of Massachusetts Amherst","ror":"https://ror.org/0072zz521","country_code":"US","type":"education","lineage":["https://openalex.org/I24603500"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Andras Moritz","raw_affiliation_strings":["The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA"],"affiliations":[{"raw_affiliation_string":"The authors are with the Electrical & Computer Engineering Department, University of Massachusetts Amherst, MA, USA","institution_ids":["https://openalex.org/I24603500"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100669533"],"corresponding_institution_ids":["https://openalex.org/I24603500"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.36317876,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"59","issue":null,"first_page":"57","last_page":"58"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8983511924743652},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6658715605735779},{"id":"https://openalex.org/keywords/sizing","display_name":"Sizing","score":0.6401383876800537},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5998281240463257},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5511986613273621},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5375046730041504},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4652325510978699},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.45750120282173157},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43468111753463745},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42974019050598145},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36737555265426636},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17544063925743103},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0880374014377594}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8983511924743652},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6658715605735779},{"id":"https://openalex.org/C2777767291","wikidata":"https://www.wikidata.org/wiki/Q1080291","display_name":"Sizing","level":2,"score":0.6401383876800537},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5998281240463257},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5511986613273621},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5375046730041504},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4652325510978699},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.45750120282173157},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43468111753463745},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42974019050598145},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36737555265426636},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17544063925743103},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0880374014377594},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nanoarch.2014.6880505","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880505","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8100000023841858,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1975356894","https://openalex.org/W2032197740","https://openalex.org/W2133752224"],"related_works":["https://openalex.org/W2375311683","https://openalex.org/W2366062860","https://openalex.org/W2373777250","https://openalex.org/W2353956655","https://openalex.org/W2020653254","https://openalex.org/W2352072014","https://openalex.org/W217279133","https://openalex.org/W2393487946","https://openalex.org/W2373310108","https://openalex.org/W1559639976"],"abstract_inverted_index":{"Maintaining":[0],"power":[1,66,104,111,116],"scaling":[2,60],"trend":[3],"and":[4,26,31,91,112],"cell":[5],"stability":[6,98],"are":[7],"critical":[8],"challenges":[9,17,61],"facing":[10],"CMOS":[11,58],"SRAM":[12,36,59,96],"at":[13,120],"sub-20nm":[14],"technologies.":[15],"These":[16],"primarily":[18],"stem":[19],"from":[20],"the":[21,27],"fundamental":[22],"limitations":[23],"of":[24,34,64],"MOSFETs,":[25],"rigid":[28],"device":[29,88],"doping":[30],"sizing":[32,89],"requirements":[33],"underlying":[35],"design.":[37],"In":[38],"this":[39],"paper,":[40],"we":[41],"propose":[42],"a":[43,71],"new":[44],"volatile":[45],"memory":[46],"architecture":[47],"called":[48],"Tunnel":[49,67],"FET":[50],"based":[51],"Random":[52],"Access":[53],"Memory":[54],"(TNRAM)":[55],"that":[56],"solves":[57],"through":[62],"integration":[63],"ultra-low":[65],"FETs":[68],"(TFETs)":[69],"in":[70],"novel":[72],"circuit":[73],"style.":[74],"It":[75],"is":[76,92],"designed":[77],"to":[78,85,94],"operate":[79],"with":[80],"single":[81],"type":[82],"uniform":[83],"transistors":[84],"eliminate":[86],"nanoscale":[87],"requirements,":[90],"customized":[93],"prevent":[95],"like":[97],"concerns.":[99],"Analytical":[100],"projections":[101],"show":[102],"significant":[103],"benefits;":[105],"6T-TNRAM":[106],"has":[107],"4.38x":[108],"lower":[109,114],"active":[110],"174x":[113],"leakage":[115],"over":[117],"HP":[118],"6T-SRAM":[119],"16nm":[121],"technology":[122],"node.":[123]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}