{"id":"https://openalex.org/W4246421564","doi":"https://doi.org/10.1109/nanoarch.2014.6880502","title":"A low contact resistance graphene field effect transistor with single-layer-channel and multi-layer-contact","display_name":"A low contact resistance graphene field effect transistor with single-layer-channel and multi-layer-contact","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W4246421564","doi":"https://doi.org/10.1109/nanoarch.2014.6880502"},"language":"en","primary_location":{"id":"doi:10.1109/nanoarch.2014.6880502","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880502","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5015813996","display_name":"Honghui Sun","orcid":null},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Honghui Sun","raw_affiliation_strings":["State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104652485","display_name":"Liang Fang","orcid":"https://orcid.org/0000-0002-2384-5845"},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liang Fang","raw_affiliation_strings":["State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100319048","display_name":"Yao Wang","orcid":"https://orcid.org/0000-0003-4814-8285"},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yao Wang","raw_affiliation_strings":["State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073182850","display_name":"Yaqing Chi","orcid":"https://orcid.org/0000-0001-9299-963X"},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaqing Chi","raw_affiliation_strings":["State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China","institution_ids":["https://openalex.org/I170215575"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073406392","display_name":"Rulin Liu","orcid":"https://orcid.org/0000-0003-3013-4889"},"institutions":[{"id":"https://openalex.org/I170215575","display_name":"National University of Defense Technology","ror":"https://ror.org/05d2yfz11","country_code":"CN","type":"education","lineage":["https://openalex.org/I170215575"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rulin Liu","raw_affiliation_strings":["State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, P.R. China","institution_ids":["https://openalex.org/I170215575"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5015813996"],"corresponding_institution_ids":["https://openalex.org/I170215575"],"apc_list":null,"apc_paid":null,"fwci":0.27709012,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.56916203,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"139","last_page":"144"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.8201568126678467},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.6931791305541992},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6595982909202576},{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.5231393575668335},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5025601387023926},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4881823658943176},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.47876206040382385},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.45829567313194275},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3317109942436218},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2982020974159241},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2967609465122223},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13668274879455566},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07480192184448242}],"concepts":[{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.8201568126678467},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6931791305541992},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6595982909202576},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.5231393575668335},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5025601387023926},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4881823658943176},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.47876206040382385},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.45829567313194275},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3317109942436218},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2982020974159241},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2967609465122223},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13668274879455566},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07480192184448242}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nanoarch.2014.6880502","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880502","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7900000214576721,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":50,"referenced_works":["https://openalex.org/W1572927658","https://openalex.org/W1802692242","https://openalex.org/W1927677023","https://openalex.org/W1935743023","https://openalex.org/W1973396412","https://openalex.org/W1976198442","https://openalex.org/W1979209992","https://openalex.org/W1989945791","https://openalex.org/W1995762238","https://openalex.org/W2010592865","https://openalex.org/W2011111381","https://openalex.org/W2021844380","https://openalex.org/W2024597862","https://openalex.org/W2028246503","https://openalex.org/W2033845672","https://openalex.org/W2039706511","https://openalex.org/W2040726943","https://openalex.org/W2045416062","https://openalex.org/W2046322820","https://openalex.org/W2048651238","https://openalex.org/W2050949257","https://openalex.org/W2052773479","https://openalex.org/W2056345158","https://openalex.org/W2058122340","https://openalex.org/W2058301310","https://openalex.org/W2060009331","https://openalex.org/W2060608132","https://openalex.org/W2068660524","https://openalex.org/W2073570309","https://openalex.org/W2084705579","https://openalex.org/W2085199192","https://openalex.org/W2113467957","https://openalex.org/W2113788074","https://openalex.org/W2115076031","https://openalex.org/W2128631927","https://openalex.org/W2133980286","https://openalex.org/W2136334331","https://openalex.org/W2146564548","https://openalex.org/W2153110626","https://openalex.org/W2162260728","https://openalex.org/W2327738243","https://openalex.org/W2329380755","https://openalex.org/W2332400500","https://openalex.org/W3100660663","https://openalex.org/W3100726178","https://openalex.org/W3102942025","https://openalex.org/W3103267139","https://openalex.org/W3104118464","https://openalex.org/W3104743467","https://openalex.org/W4211172053"],"related_works":["https://openalex.org/W2135249421","https://openalex.org/W2786141061","https://openalex.org/W2139871202","https://openalex.org/W1480473064","https://openalex.org/W2036662580","https://openalex.org/W3092493668","https://openalex.org/W1987913355","https://openalex.org/W2100582850","https://openalex.org/W4288754270","https://openalex.org/W2091783834"],"abstract_inverted_index":{"As":[0],"of":[1,13,19,28,60,88,98,121,136,147,205,211,221],"today,":[2],"the":[3,16,29,36,41,86,99,108,113,122,153,161,165,175,183,189,202,213,219],"semiconductor":[4],"industry":[5],"has":[6],"been":[7],"looking":[8],"for":[9,26,52,71],"possible":[10],"alternative":[11,51],"materials":[12,38],"silicon,":[14],"since":[15],"physical":[17],"limitation":[18],"silicon-based":[20],"devices,":[21],"i.e.,":[22],"planar":[23],"CMOS":[24],"devices":[25],"most":[27,100,123],"scenarios,":[30],"is":[31,44,107,116,130,192,216,224],"approaching":[32],"soon.":[33],"Among":[34],"all":[35,58],"novel":[37],"arising":[39],"from":[40],"horizon,":[42],"graphene":[43,172,198],"considered":[45,117],"to":[46,77,81,85,104,118,134,151,201],"be":[47,105,119],"a":[48,148],"very":[49],"promising":[50],"its":[53,83],"unique":[54],"electrical":[55,62],"properties.":[56],"Although":[57],"kinds":[59],"prospective":[61],"properties":[63],"it":[64],"has(e.g.,":[65],"high":[66,132,203],"mobility),":[67],"there":[68],"are":[69,168,180],"barriers":[70,103],"Graphene-based":[72],"Field":[73,93],"Effect":[74,94],"Transistors":[75,95],"(G-FETs)":[76],"overcome,":[78],"in":[79,128,156],"order":[80],"find":[82],"way":[84],"substitution":[87],"Silicon":[89],"Metal":[90],"Oxide":[91],"Semiconducting":[92],"(Si-MOSFETs).":[96],"One":[97],"important":[101],"engineering":[102],"overwhelmed":[106],"parasitic":[109,114],"parameters,":[110],"among":[111],"which":[112],"resistance":[115,127,155,215],"one":[120],"critical":[124],"roadblock.":[125],"Contact":[126],"G-FETs":[129],"relatively":[131],"compared":[133],"that":[135],"conventional":[137],"Si-MOSFETs.":[138],"In":[139,160],"this":[140],"paper,":[141],"we":[142],"present":[143],"an":[144],"experimental":[145],"demonstration":[146],"new":[149],"method":[150],"reduce":[152],"contact":[154,214],"back":[157],"gate":[158],"G-FETs.":[159],"proposed":[162],"device":[163],"structure,":[164],"source/drain":[166],"regions":[167],"fabricated":[169],"using":[170,196],"multilayer":[171],"(MLG),":[173],"thus":[174],"top":[176],"and":[177,185,207],"edge":[178],"contacts":[179],"formed":[181,194],"between":[182],"MLG":[184,206],"metal":[186],"electrodes,":[187],"while":[188,218],"conducting":[190],"channel":[191,222],"still":[193],"by":[195],"single-layer":[197],"(SLG).":[199],"Due":[200],"conductivity":[204,210,223],"relative":[208],"low":[209],"SLG,":[212],"reduced":[217],"controllability":[220],"preserved.":[225]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}