{"id":"https://openalex.org/W4253171100","doi":"https://doi.org/10.1109/nanoarch.2014.6880489","title":"Design and analysis of Racetrack memory based on magnetic domain wall motion in nanowires","display_name":"Design and analysis of Racetrack memory based on magnetic domain wall motion in nanowires","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W4253171100","doi":"https://doi.org/10.1109/nanoarch.2014.6880489"},"language":"en","primary_location":{"id":"doi:10.1109/nanoarch.2014.6880489","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880489","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067775411","display_name":"N. Ben-Romdhane","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Ben-Romdhane","raw_affiliation_strings":["UMR 8622, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMR 8622, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066473925","display_name":"Weisheng Zhao","orcid":"https://orcid.org/0000-0001-8088-0404"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"W. S. Zhao","raw_affiliation_strings":["Electronics and Information Engineering School, Beihang Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics and Information Engineering School, Beihang Univ., Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101627723","display_name":"Yan Zhang","orcid":"https://orcid.org/0000-0002-6906-6791"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Y. Zhang","raw_affiliation_strings":["UMR 8622, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMR 8622, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102978184","display_name":"Jacques\u2010Olivier Klein","orcid":"https://orcid.org/0000-0002-6923-5276"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J-O. Klein","raw_affiliation_strings":["UMR 8622, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMR 8622, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056975750","display_name":"Z. R. Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Z. R. Wang","raw_affiliation_strings":["UMR 8622, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMR 8622, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037048702","display_name":"D. Ravelosona","orcid":"https://orcid.org/0000-0002-4072-1457"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Ravelosona","raw_affiliation_strings":["UMR 8622, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"UMR 8622, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"47","issue":null,"first_page":"71","last_page":"76"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9947999715805054,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.984000027179718,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.675244927406311},{"id":"https://openalex.org/keywords/magnetic-domain","display_name":"Magnetic domain","score":0.6149693131446838},{"id":"https://openalex.org/keywords/racetrack-memory","display_name":"Racetrack memory","score":0.5805538892745972},{"id":"https://openalex.org/keywords/magnetic-memory","display_name":"Magnetic memory","score":0.5636913180351257},{"id":"https://openalex.org/keywords/domain-wall","display_name":"Domain wall (magnetism)","score":0.535143256187439},{"id":"https://openalex.org/keywords/motion","display_name":"Motion (physics)","score":0.4304003119468689},{"id":"https://openalex.org/keywords/domain","display_name":"Domain (mathematical analysis)","score":0.4292508661746979},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4283398985862732},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41045185923576355},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28367385268211365},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.269916832447052},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.2362823188304901},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2085791528224945},{"id":"https://openalex.org/keywords/memory-management","display_name":"Memory management","score":0.20792752504348755},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.15697601437568665},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.10775730013847351},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.10257220268249512},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10229462385177612},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.07354071736335754},{"id":"https://openalex.org/keywords/mathematical-analysis","display_name":"Mathematical analysis","score":0.06266677379608154}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.675244927406311},{"id":"https://openalex.org/C182260160","wikidata":"https://www.wikidata.org/wiki/Q1069637","display_name":"Magnetic domain","level":4,"score":0.6149693131446838},{"id":"https://openalex.org/C43363307","wikidata":"https://www.wikidata.org/wiki/Q1651623","display_name":"Racetrack memory","level":5,"score":0.5805538892745972},{"id":"https://openalex.org/C2983079785","wikidata":"https://www.wikidata.org/wiki/Q6731577","display_name":"Magnetic memory","level":3,"score":0.5636913180351257},{"id":"https://openalex.org/C181686392","wikidata":"https://www.wikidata.org/wiki/Q2591394","display_name":"Domain wall (magnetism)","level":4,"score":0.535143256187439},{"id":"https://openalex.org/C104114177","wikidata":"https://www.wikidata.org/wiki/Q79782","display_name":"Motion (physics)","level":2,"score":0.4304003119468689},{"id":"https://openalex.org/C36503486","wikidata":"https://www.wikidata.org/wiki/Q11235244","display_name":"Domain (mathematical analysis)","level":2,"score":0.4292508661746979},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4283398985862732},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41045185923576355},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28367385268211365},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.269916832447052},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.2362823188304901},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2085791528224945},{"id":"https://openalex.org/C176649486","wikidata":"https://www.wikidata.org/wiki/Q2308807","display_name":"Memory management","level":3,"score":0.20792752504348755},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.15697601437568665},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.10775730013847351},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.10257220268249512},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10229462385177612},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.07354071736335754},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.06266677379608154},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C63511323","wikidata":"https://www.wikidata.org/wiki/Q908936","display_name":"Interleaved memory","level":4,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nanoarch.2014.6880489","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2014.6880489","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4300000071525574,"id":"https://metadata.un.org/sdg/11","display_name":"Sustainable cities and communities"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320883","display_name":"Agence Nationale de la Recherche","ror":"https://ror.org/00rbzpz17"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1566916904","https://openalex.org/W1963984862","https://openalex.org/W1973382704","https://openalex.org/W1978910126","https://openalex.org/W1981443800","https://openalex.org/W2011081164","https://openalex.org/W2020583007","https://openalex.org/W2025173691","https://openalex.org/W2029083842","https://openalex.org/W2037924279","https://openalex.org/W2040860471","https://openalex.org/W2048341626","https://openalex.org/W2064253301","https://openalex.org/W2065494245","https://openalex.org/W2073091054","https://openalex.org/W2084472194","https://openalex.org/W2103282475","https://openalex.org/W2109640656","https://openalex.org/W2156728623"],"related_works":["https://openalex.org/W2068469997","https://openalex.org/W2751956986","https://openalex.org/W2029908926","https://openalex.org/W2588542468","https://openalex.org/W2355433119","https://openalex.org/W1991890985","https://openalex.org/W2598075973","https://openalex.org/W1906053546","https://openalex.org/W2475606152","https://openalex.org/W2913460825"],"abstract_inverted_index":{"Current":[0],"induced":[1],"domain":[2,61,119],"walls":[3],"(DW)":[4],"motion":[5,121],"in":[6,122],"magnetic":[7,22,60,118,136],"nanowires":[8],"or":[9],"nano-stripes":[10],"presents":[11],"a":[12,31,50,66,93,134],"novel":[13],"approach":[14],"to":[15,38,58,65,69,148],"store":[16],"and":[17,43,73,133,156],"convey":[18],"data.":[19],"Combining":[20],"with":[21],"tunnel":[23],"junction":[24],"(MTJ)":[25],"nanopillars,":[26],"Racetrack":[27],"memory":[28,36,110],"(RM)":[29],"becomes":[30],"new":[32],"class":[33],"of":[34,89,108,117],"non-volatile":[35],"thanks":[37],"its":[39],"large":[40],"storage":[41],"capacity":[42],"fast":[44],"data":[45],"access.":[46],"However,":[47],"we":[48,84,104],"need":[49],"relatively":[51],"high":[52],"current":[53],"passing":[54],"through":[55],"the":[56,78,87,98,106,114,150],"nanowire":[57,90],"move":[59],"walls.":[62],"This":[63],"leads":[64],"big":[67],"challenge":[68],"design":[70,107,131],"integration":[71],"circuits":[72],"architecture":[74],"for":[75,97],"RM":[76,99,139],"beyond":[77],"device":[79],"level":[80],"research.":[81],"For":[82],"instance,":[83],"find":[85],"that":[86],"resistivity":[88],"material":[91],"is":[92],"very":[94],"critical":[95],"parameter":[96],"design.":[100],"In":[101],"this":[102],"paper,":[103],"present":[105],"racetrack":[109],"taking":[111],"into":[112],"account":[113],"physical":[115],"prospects":[116],"wall":[120],"nanowires.":[123],"By":[124],"using":[125],"an":[126],"industrial":[127],"CMOS":[128],"40":[129],"nm":[130],"kit":[132],"perpendicular":[135],"anisotropy":[137],"(PMA)":[138],"compact":[140],"model,":[141],"mixed":[142],"SPICE":[143],"simulations":[144],"have":[145],"been":[146],"performed":[147],"analyze":[149],"area":[151],"(e.g.":[152],"1":[153],"F2),":[154],"speed":[155],"reliability":[157],"performances.":[158]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}