{"id":"https://openalex.org/W2025673235","doi":"https://doi.org/10.1109/nanoarch.2013.6623050","title":"A PCM-based TCAM cell using NDR","display_name":"A PCM-based TCAM cell using NDR","publication_year":2013,"publication_date":"2013-07-01","ids":{"openalex":"https://openalex.org/W2025673235","doi":"https://doi.org/10.1109/nanoarch.2013.6623050","mag":"2025673235"},"language":"en","primary_location":{"id":"doi:10.1109/nanoarch.2013.6623050","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2013.6623050","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074969115","display_name":"Hao Wu","orcid":"https://orcid.org/0000-0001-6471-1774"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hao Wu","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001979328","display_name":"Fabrizio Lombardi","orcid":"https://orcid.org/0000-0003-3152-3245"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fabrizio Lombardi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005550142","display_name":"Jie Han","orcid":"https://orcid.org/0000-0002-8849-4994"},"institutions":[{"id":"https://openalex.org/I154425047","display_name":"University of Alberta","ror":"https://ror.org/0160cpw27","country_code":"CA","type":"education","lineage":["https://openalex.org/I154425047"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Jie Han","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Canada","Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Canada","institution_ids":["https://openalex.org/I154425047"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada#TAB#","institution_ids":["https://openalex.org/I154425047"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5074969115"],"corresponding_institution_ids":["https://openalex.org/I12912129"],"apc_list":null,"apc_paid":null,"fwci":0.4798,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.69144589,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"28","issue":null,"first_page":"89","last_page":"94"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12326","display_name":"Network Packet Processing and Optimization","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6812431812286377},{"id":"https://openalex.org/keywords/content-addressable-memory","display_name":"Content-addressable memory","score":0.6244804859161377},{"id":"https://openalex.org/keywords/power\u2013delay-product","display_name":"Power\u2013delay product","score":0.5861201286315918},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.5691601037979126},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.552470862865448},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5485842227935791},{"id":"https://openalex.org/keywords/content-addressable-storage","display_name":"Content-addressable storage","score":0.5397340655326843},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5321176648139954},{"id":"https://openalex.org/keywords/ternary-operation","display_name":"Ternary operation","score":0.5266287922859192},{"id":"https://openalex.org/keywords/decoding-methods","display_name":"Decoding methods","score":0.4860678017139435},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4600316286087036},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3764117956161499},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.36059457063674927},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3394657373428345},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2776481509208679},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2387872338294983},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18275830149650574},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1379336416721344},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12096545100212097},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10579434037208557},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.09068882465362549},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.07911768555641174}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6812431812286377},{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.6244804859161377},{"id":"https://openalex.org/C2776391166","wikidata":"https://www.wikidata.org/wiki/Q7236873","display_name":"Power\u2013delay product","level":4,"score":0.5861201286315918},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.5691601037979126},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.552470862865448},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5485842227935791},{"id":"https://openalex.org/C2778618852","wikidata":"https://www.wikidata.org/wiki/Q1128613","display_name":"Content-addressable storage","level":4,"score":0.5397340655326843},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5321176648139954},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.5266287922859192},{"id":"https://openalex.org/C57273362","wikidata":"https://www.wikidata.org/wiki/Q576722","display_name":"Decoding methods","level":2,"score":0.4860678017139435},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4600316286087036},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3764117956161499},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.36059457063674927},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3394657373428345},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2776481509208679},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2387872338294983},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18275830149650574},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1379336416721344},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12096545100212097},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10579434037208557},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.09068882465362549},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.07911768555641174},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/nanoarch.2013.6623050","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nanoarch.2013.6623050","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.722.1272","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.722.1272","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.ece.ualberta.ca/%7Ejhan8/publications/nanoarch2013_CameraReady.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1520208380","https://openalex.org/W1985239331","https://openalex.org/W2000353134","https://openalex.org/W2010481867","https://openalex.org/W2025422414","https://openalex.org/W2042051941","https://openalex.org/W2060032564","https://openalex.org/W2062042175","https://openalex.org/W2062143991","https://openalex.org/W2065687599","https://openalex.org/W2103873102","https://openalex.org/W2109041721","https://openalex.org/W2120469967","https://openalex.org/W2136199013","https://openalex.org/W2167899413","https://openalex.org/W3144591591","https://openalex.org/W3149985107"],"related_works":["https://openalex.org/W1989420504","https://openalex.org/W2041845676","https://openalex.org/W2125477157","https://openalex.org/W4321273133","https://openalex.org/W3103704822","https://openalex.org/W2093404141","https://openalex.org/W2109692706","https://openalex.org/W2050720944","https://openalex.org/W2158622082","https://openalex.org/W2121208979"],"abstract_inverted_index":{"This":[0,14],"paper":[1],"presents":[2],"a":[3,7,21,30,42,59,65,74,80,147],"new":[4],"design":[5,15],"of":[6,51,69,158],"ternary":[8,49],"content":[9],"addressable":[10],"memory":[11,24],"(TCAM)":[12],"cell.":[13],"exploits":[16],"two":[17],"emerging":[18],"technology":[19],"devices:":[20],"phase":[22],"change":[23],"(PCM)":[25],"as":[26,36],"storage":[27],"element":[28],"and":[29,84,133,161],"negative":[31],"differential":[32],"resistance":[33,44],"(NDR)":[34],"device":[35,63,90],"control":[37],"element.":[38],"The":[39,61,88],"PCM":[40],"stores":[41],"multi-value":[43],"to":[45,55,72],"account":[46],"for":[47,107,120],"the":[48,52,94,104,109,122,142],"nature":[50],"equality":[53],"function":[54],"be":[56],"performed":[57],"in":[58,93,156],"TCAM.":[60],"CMOS-NDR":[62,89],"uses":[64],"macroscopic":[66],"model":[67],"made":[68],"three":[70],"transistors":[71],"exhibit":[73],"very":[75],"high":[76],"peak-to-valley":[77],"current":[78],"ratio,":[79],"single":[81],"symmetric":[82],"peak":[83],"excellent":[85],"switching":[86],"speed.":[87],"is":[91,118],"embedded":[92],"cell":[95,145,152],"such":[96],"that":[97,141],"specific":[98],"operational":[99],"points":[100],"are":[101,136],"placed":[102],"on":[103,154],"I-V":[105],"curve":[106],"generating":[108],"match/mismatch":[110],"outcome.":[111],"A":[112],"common-source":[113],"amplifier":[114],"with":[115],"source":[116],"degeneration":[117],"used":[119],"decoding":[121],"PCM.":[123],"Extensive":[124],"simulation":[125],"results":[126,139],"at":[127],"nanoscale":[128],"feature":[129],"sizes":[130],"(45,":[131],"32":[132],"22":[134],"nm)":[135],"presented.":[137],"These":[138],"show":[140],"proposed":[143],"TCAM":[144,151],"outperforms":[146],"previously":[148],"presented":[149],"non-volatile":[150],"based":[153],"MTJ":[155],"terms":[157],"power":[159,162],"dissipation":[160],"delay":[163],"product":[164],"(PDP).":[165]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}