{"id":"https://openalex.org/W4391381925","doi":"https://doi.org/10.1109/mwscas57524.2023.10406126","title":"SiC MOSFET High Side Gate Driver Design Using HV CMOS Process","display_name":"SiC MOSFET High Side Gate Driver Design Using HV CMOS Process","publication_year":2023,"publication_date":"2023-08-06","ids":{"openalex":"https://openalex.org/W4391381925","doi":"https://doi.org/10.1109/mwscas57524.2023.10406126"},"language":"en","primary_location":{"id":"doi:10.1109/mwscas57524.2023.10406126","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas57524.2023.10406126","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058562624","display_name":"Oliver Lexter July A. Jose","orcid":"https://orcid.org/0000-0003-4565-9506"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Oliver Lexter July A. Jose","raw_affiliation_strings":["National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424"],"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026746314","display_name":"Jui-Min Kuo","orcid":null},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jui-Min Kuo","raw_affiliation_strings":["National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424"],"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023181597","display_name":"Venkata Naveen Kolakaluri","orcid":null},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Venkata Naveen Kolakaluri","raw_affiliation_strings":["National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424"],"affiliations":[{"raw_affiliation_string":"National Sun Yat-Sen University,Dept. of Electrical Engineering,Kaohsiung,Taiwan,80424","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077220045","display_name":"Chua\u2010Chin Wang","orcid":"https://orcid.org/0000-0002-2426-2879"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]},{"id":"https://openalex.org/I1330855593","display_name":"Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology","ror":"https://ror.org/05bc5bx80","country_code":"IN","type":"education","lineage":["https://openalex.org/I1330855593"]}],"countries":["IN","TW"],"is_corresponding":false,"raw_author_name":"Chua-Chin Wang","raw_affiliation_strings":["Ins. of Undersea Technology, National Sun Yat-Sen University,Taiwan","Vel Tech. U., India","Ins. of Undersea Technology, National Sun Yat-Sen University, Taiwan"],"affiliations":[{"raw_affiliation_string":"Ins. of Undersea Technology, National Sun Yat-Sen University,Taiwan","institution_ids":["https://openalex.org/I142974352"]},{"raw_affiliation_string":"Vel Tech. U., India","institution_ids":["https://openalex.org/I1330855593"]},{"raw_affiliation_string":"Ins. of Undersea Technology, National Sun Yat-Sen University, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5058562624"],"corresponding_institution_ids":["https://openalex.org/I142974352"],"apc_list":null,"apc_paid":null,"fwci":0.6694,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.70065203,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"45","last_page":"49"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5378668904304504},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43318164348602295},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.42306530475616455},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3567849397659302},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15447163581848145}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5378668904304504},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43318164348602295},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.42306530475616455},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3567849397659302},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15447163581848145}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwscas57524.2023.10406126","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas57524.2023.10406126","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6700000166893005}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2029424205","https://openalex.org/W2106278940","https://openalex.org/W2612302597","https://openalex.org/W2687165237","https://openalex.org/W2736749564","https://openalex.org/W2768779506","https://openalex.org/W2892555599","https://openalex.org/W2899335200","https://openalex.org/W2950223864","https://openalex.org/W3028583087","https://openalex.org/W4200321480","https://openalex.org/W4249411805","https://openalex.org/W4284878730"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W3014521742","https://openalex.org/W2390279801","https://openalex.org/W2358668433","https://openalex.org/W2617868873","https://openalex.org/W4396701345","https://openalex.org/W3204141294","https://openalex.org/W2376932109","https://openalex.org/W2001405890"],"abstract_inverted_index":{"High":[0],"side":[1],"driver":[2],"is":[3],"one":[4],"of":[5,11,64,77,92],"major":[6],"factors":[7],"determines":[8],"the":[9,98,137],"performance":[10],"SiC":[12],"MOSFETs.":[13],"This":[14],"research":[15],"proposed":[16,44],"an":[17,73],"AGD":[18,45],"(active":[19],"gate":[20,108],"driver)":[21],"design":[22],"that":[23],"uses":[24],"a":[25,61],"window":[26],"comparator":[27],"circuit,":[28,31],"feedback-controlled":[29],"split-path":[30],"and":[32,39,72,89,127,147],"tri-state":[33],"inverting":[34],"buffer":[35],"to":[36],"generate":[37],"weak":[38],"strong":[40],"driving":[41],"signals.":[42],"The":[43,86,106],"has":[46,60],"been":[47],"implemented":[48],"in":[49,101],"TSMC":[50],"<tex":[51,68,81,111,117,123,132,152],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[52,69,82,112,118,124,133,153],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$0.18-\\mu":[53],"\\mathrm{m}$</tex>":[54],"HV":[55,87],"CMOS":[56],"(TI8HVG2)":[57],"technology,":[58],"which":[59],"core":[62],"area":[63,76],"3200":[65],"x":[66,79],"2632":[67],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mu":[70,83],"\\mathrm{m}^{2}$</tex>":[71,84],"overall":[74],"chip":[75],"4515":[78],"3260":[80],".":[85],"MOS":[88],"diode":[90],"model":[91],"Infineon":[93],"IMW65R048M1H":[94],"are":[95,140],"used":[96],"as":[97],"power":[99,129],"MOSFETs":[100],"all-PVT":[102],"corner":[103,139],"post-layout":[104],"simulations.":[105],"peak":[107],"current":[109],"(":[110,131],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{I}_{g(pk)}$</tex>":[113],"),":[114],"rise":[115],"time":[116,122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{t}_{ris{e}})$</tex>":[119],",":[120,126],"fall":[121],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$(\\mathbf{t}_{fall})$</tex>":[125],"average":[128],"consumption":[130],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{P}_{ave}$</tex>":[134],")":[135],"for":[136],"worst":[138],"4.15":[141],"A,":[142],"153":[143],"ns,":[144,146],"187":[145],"32.7":[148],"W,":[149],"respectively,":[150],"at":[151],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathbf{f}_{PWM}=500$</tex>":[154],"kHz.":[155]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}