{"id":"https://openalex.org/W4391381727","doi":"https://doi.org/10.1109/mwscas57524.2023.10406009","title":"High-Efficiency Wideband Envelope-Tracking Power Amplifier Module with GaN PA for 5G NR Base-Station Applications","display_name":"High-Efficiency Wideband Envelope-Tracking Power Amplifier Module with GaN PA for 5G NR Base-Station Applications","publication_year":2023,"publication_date":"2023-08-06","ids":{"openalex":"https://openalex.org/W4391381727","doi":"https://doi.org/10.1109/mwscas57524.2023.10406009"},"language":"en","primary_location":{"id":"doi:10.1109/mwscas57524.2023.10406009","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mwscas57524.2023.10406009","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078761347","display_name":"Chin Hsia","orcid":null},"institutions":[{"id":"https://openalex.org/I141243467","display_name":"Chang Gung University of Science and Technology","ror":"https://ror.org/009knm296","country_code":"TW","type":"education","lineage":["https://openalex.org/I141243467"]},{"id":"https://openalex.org/I173093425","display_name":"Chang Gung University","ror":"https://ror.org/00d80zx46","country_code":"TW","type":"education","lineage":["https://openalex.org/I173093425"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Chin Hsia","raw_affiliation_strings":["Chang Gung University,Taiwan. R.O.C","Chang Gung University, Taiwan. R.O.C"],"affiliations":[{"raw_affiliation_string":"Chang Gung University,Taiwan. R.O.C","institution_ids":["https://openalex.org/I173093425","https://openalex.org/I141243467"]},{"raw_affiliation_string":"Chang Gung University, Taiwan. R.O.C","institution_ids":["https://openalex.org/I173093425","https://openalex.org/I141243467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5078761347"],"corresponding_institution_ids":["https://openalex.org/I141243467","https://openalex.org/I173093425"],"apc_list":null,"apc_paid":null,"fwci":0.1339,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.48546304,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"399","last_page":"403"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7820135354995728},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.6969208121299744},{"id":"https://openalex.org/keywords/predistortion","display_name":"Predistortion","score":0.633080244064331},{"id":"https://openalex.org/keywords/adjacent-channel","display_name":"Adjacent channel","score":0.612601637840271},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.6076897382736206},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5163661241531372},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47003501653671265},{"id":"https://openalex.org/keywords/linear-amplifier","display_name":"Linear amplifier","score":0.43210339546203613},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.4315240681171417},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3597431778907776},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34398213028907776},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.2869555950164795},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2085021734237671}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7820135354995728},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.6969208121299744},{"id":"https://openalex.org/C2778587875","wikidata":"https://www.wikidata.org/wiki/Q7239686","display_name":"Predistortion","level":4,"score":0.633080244064331},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.612601637840271},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.6076897382736206},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5163661241531372},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47003501653671265},{"id":"https://openalex.org/C71041172","wikidata":"https://www.wikidata.org/wiki/Q6553412","display_name":"Linear amplifier","level":5,"score":0.43210339546203613},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.4315240681171417},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3597431778907776},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34398213028907776},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.2869555950164795},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2085021734237671}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwscas57524.2023.10406009","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mwscas57524.2023.10406009","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8899999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1495818631","https://openalex.org/W1944593068","https://openalex.org/W2272673147","https://openalex.org/W2764158875","https://openalex.org/W2887511278","https://openalex.org/W2921430065","https://openalex.org/W2971886589","https://openalex.org/W3085378274","https://openalex.org/W3127503568","https://openalex.org/W3138837876","https://openalex.org/W3164091900","https://openalex.org/W4200385861","https://openalex.org/W4214873242","https://openalex.org/W4226501887","https://openalex.org/W4245466829","https://openalex.org/W4248432542","https://openalex.org/W4285411521","https://openalex.org/W4295038246"],"related_works":["https://openalex.org/W2584366579","https://openalex.org/W2102454024","https://openalex.org/W2001380327","https://openalex.org/W2163964946","https://openalex.org/W2118653367","https://openalex.org/W2147282204","https://openalex.org/W2394740396","https://openalex.org/W2022939466","https://openalex.org/W2048511311","https://openalex.org/W2036889701"],"abstract_inverted_index":{"Envelope":[0],"tracking":[1,214],"power":[2,40,102,166,188],"amplifiers":[3,65],"(ETPAs)":[4],"have":[5],"emerged":[6],"as":[7],"a":[8,31,36,57,70,86,93,100,144,149,159],"promising":[9],"solution":[10],"for":[11,92,120,131,211,218],"achieving":[12],"high":[13,135],"efficiency":[14,78,133,161],"in":[15,67],"modern":[16],"wireless":[17],"communication":[18],"systems.":[19],"In":[20],"this":[21],"article,":[22],"we":[23],"present":[24],"an":[25,185,212],"integrated":[26],"ET":[27,121,139],"module":[28,140],"that":[29,74],"combines":[30],"wideband":[32,63,96,220],"envelope":[33,52,170,213],"modulator":[34,53],"and":[35,61,123,148,172,192],"gallium":[37],"nitride":[38],"(GaN)":[39],"amplifier":[41,217],"(PA)":[42],"on":[43,112],"the":[44,113,117,129,165,169,198,203,207],"same":[45,114],"printed":[46],"circuit":[47],"board":[48],"(PCB)":[49],"substrate.":[50],"The":[51,108,138,155],"architecture":[54],"consists":[55],"of":[56,105,162,168,178,194,200],"high-efficiency":[58],"switching":[59],"converter":[60],"three":[62],"linear":[64],"connected":[66],"parallel,":[68],"with":[69,99],"novel":[71],"control":[72,127],"principle":[73],"achieves":[75,158],"over":[76],"80%":[77],"while":[79],"delivering":[80],"more":[81],"than":[82],"20":[83,87],"W":[84,191],"into":[85],"\u03a9":[88],"equivalent":[89],"resistive":[90],"load":[91],"100":[94,150],"MHz":[95,151],"modulated":[97,153],"signal":[98],"peak-to-average":[101],"ratio":[103,176],"(PAPR)":[104],"6.5":[106],"dB.":[107,196],"GaN":[109],"PA,":[110],"designed":[111],"substrate,":[115],"retunes":[116],"fundamental":[118],"impedance":[119],"operation":[122],"performs":[124],"second":[125],"harmonic":[126],"at":[128,134,184],"output":[130,136,187],"improved":[132],"power.":[137],"is":[141],"tested":[142],"using":[143],"2.5":[145],"GHz":[146],"carrier":[147],"5G-NR":[152],"signal.":[154],"overall":[156],"system":[157],"total":[160],"48.8%":[163],"(including":[164],"dissipation":[167],"modulator)":[171],"adjacent":[173],"channel":[174],"leakage":[175],"(ACLR)":[177],"-36.86":[179],"dBc":[180],"without":[181],"predistortion":[182],"techniques,":[183],"average":[186],"above":[189],"14":[190],"gain":[193],"10.1":[195],"To":[197],"best":[199],"our":[201],"knowledge,":[202],"efficiencies":[204],"obtained":[205],"are":[206],"highest":[208],"ever":[209],"achieved":[210],"base":[215],"station":[216],"such":[219],"signals.":[221]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2025-12-22T23:10:17.713674","created_date":"2025-10-10T00:00:00"}