{"id":"https://openalex.org/W2912037534","doi":"https://doi.org/10.1109/mwscas.2018.8623908","title":"A Compact 65nm CMOS Sub-1-V All-MOSFET Voltage Reference with Low Average Temperature Coefficient of 13.9ppm/\u00b0C","display_name":"A Compact 65nm CMOS Sub-1-V All-MOSFET Voltage Reference with Low Average Temperature Coefficient of 13.9ppm/\u00b0C","publication_year":2018,"publication_date":"2018-08-01","ids":{"openalex":"https://openalex.org/W2912037534","doi":"https://doi.org/10.1109/mwscas.2018.8623908","mag":"2912037534"},"language":"en","primary_location":{"id":"doi:10.1109/mwscas.2018.8623908","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas.2018.8623908","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036381296","display_name":"Kaijie Ma","orcid":"https://orcid.org/0000-0001-8837-336X"},"institutions":[{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Kaijie Ma","raw_affiliation_strings":["College of Electronic Science and Technology, Shenzhen University, Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Science and Technology, Shenzhen University, Shenzhen, China","institution_ids":["https://openalex.org/I180726961"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051407732","display_name":"Yuan Cao","orcid":"https://orcid.org/0000-0001-5227-2241"},"institutions":[{"id":"https://openalex.org/I163340411","display_name":"Hohai University","ror":"https://ror.org/01wd4xt90","country_code":"CN","type":"education","lineage":["https://openalex.org/I163340411"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuan Cao","raw_affiliation_strings":["College of Internet of Things Engineering, Hohai University, Changzhou, China"],"affiliations":[{"raw_affiliation_string":"College of Internet of Things Engineering, Hohai University, Changzhou, China","institution_ids":["https://openalex.org/I163340411"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065818226","display_name":"Xiaojin Zhao","orcid":"https://orcid.org/0000-0002-9965-3516"},"institutions":[{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaojin Zhao","raw_affiliation_strings":["College of Electronic Science and Technology, Shenzhen University, Shenzhen, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Science and Technology, Shenzhen University, Shenzhen, China","institution_ids":["https://openalex.org/I180726961"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5036381296"],"corresponding_institution_ids":["https://openalex.org/I180726961"],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59665137,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7684711217880249},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7519804239273071},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.6951038241386414},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4822019338607788},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4686766266822815},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4533514380455017},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4335165023803711},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.41527464985847473},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.30940160155296326},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2858473062515259},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19058513641357422}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7684711217880249},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7519804239273071},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.6951038241386414},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4822019338607788},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4686766266822815},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4533514380455017},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4335165023803711},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.41527464985847473},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.30940160155296326},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2858473062515259},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19058513641357422},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwscas.2018.8623908","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas.2018.8623908","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1964559056","https://openalex.org/W2050338196","https://openalex.org/W2137423126","https://openalex.org/W2509281929","https://openalex.org/W2526464117","https://openalex.org/W2558291233","https://openalex.org/W2567697159","https://openalex.org/W2584442328","https://openalex.org/W2744687811","https://openalex.org/W2759418578","https://openalex.org/W6662798275"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2965295431","https://openalex.org/W2171986175","https://openalex.org/W2089791793","https://openalex.org/W2143712255","https://openalex.org/W2098544163"],"abstract_inverted_index":{"In":[0,36],"this":[1],"paper,":[2],"we":[3],"present":[4],"a":[5,21,38,66,73,140],"novel":[6],"CMOS":[7,70],"sub-1-V":[8],"voltage":[9,31,59],"reference":[10,32],"design":[11],"without":[12],"any":[13],"resistor":[14],"or":[15],"bipolar":[16],"junction":[17],"transistor.":[18],"By":[19],"forming":[20],"closed":[22],"feedback":[23],"loop,":[24],"the":[25,29,46,57,93,127],"temperature":[26,97],"stability":[27],"of":[28,77,144],"proposed":[30,58,128],"is":[33,42,62,104,114,134],"significantly":[34],"enhanced.":[35],"addition,":[37],"dedicated":[39],"operational":[40,130],"amplifier":[41],"introduced":[43],"to":[44,85,102,106,116,137],"improve":[45],"power":[47,131],"supply":[48,132],"rejection":[49],"ratio":[50],"(PSRR)":[51],"and":[52,95,109,119,123],"line":[53,142],"regulation":[54,143],"(LR).":[55],"Moreover,":[56],"reference,":[60],"which":[61],"implemented":[63],"by":[64],"using":[65],"65nm":[67],"1.2V":[68],"standard":[69],"process,":[71],"features":[72],"compact":[74],"silicon":[75],"area":[76],"609":[78],"\u03bcm":[79],"<sup":[80],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[81],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[82],".":[83],"According":[84],"our":[86],"300":[87],"runs":[88],"Monte":[89],"Carlo":[90],"simulation":[91],"results,":[92],"average":[94],"minimum":[96],"coefficient":[98],"(TC)":[99],"from":[100,135],"-40\u00b0C":[101],"100\u00b0C":[103],"calculated":[105,141],"be":[107,117],"13.9ppm/\u00b0C":[108],"4.2ppm/\u00b0C,":[110],"respectively.":[111,125],"The":[112],"PSRR":[113],"reported":[115],"38dB":[118],"61dB":[120],"at":[121],"DC":[122],"10MHz,":[124],"Meanwhile,":[126],"implementation's":[129],"range":[133],"0.9V":[136],"2.6V,":[138],"with":[139],"2.29%/V.":[145]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}