{"id":"https://openalex.org/W2024732602","doi":"https://doi.org/10.1109/mwscas.2013.6674655","title":"Near-threshold CNTFET SRAM cell design with gated cell power supply","display_name":"Near-threshold CNTFET SRAM cell design with gated cell power supply","publication_year":2013,"publication_date":"2013-08-01","ids":{"openalex":"https://openalex.org/W2024732602","doi":"https://doi.org/10.1109/mwscas.2013.6674655","mag":"2024732602"},"language":"en","primary_location":{"id":"doi:10.1109/mwscas.2013.6674655","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas.2013.6674655","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100442930","display_name":"Zhe Zhang","orcid":"https://orcid.org/0000-0001-6563-1848"},"institutions":[{"id":"https://openalex.org/I72951846","display_name":"Washington State University","ror":"https://ror.org/05dk0ce17","country_code":"US","type":"education","lineage":["https://openalex.org/I72951846"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Zhe Zhang","raw_affiliation_strings":["School of Electrical Engineering and Computer Science, Washington State University, Pullman, WA, USA","Sch. of Electr. Eng. & Comput. Sci.,, Washington State Univ., Pullman, WA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Computer Science, Washington State University, Pullman, WA, USA","institution_ids":["https://openalex.org/I72951846"]},{"raw_affiliation_string":"Sch. of Electr. Eng. & Comput. Sci.,, Washington State Univ., Pullman, WA, USA","institution_ids":["https://openalex.org/I72951846"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057615824","display_name":"J.G. Delgado-Frias","orcid":"https://orcid.org/0000-0002-7026-9991"},"institutions":[{"id":"https://openalex.org/I72951846","display_name":"Washington State University","ror":"https://ror.org/05dk0ce17","country_code":"US","type":"education","lineage":["https://openalex.org/I72951846"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jose G. Delgado-Frias","raw_affiliation_strings":["School of Electrical Engineering and Computer Science, Washington State University, Pullman, WA, USA","Sch. of Electr. Eng. & Comput. Sci.,, Washington State Univ., Pullman, WA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Computer Science, Washington State University, Pullman, WA, USA","institution_ids":["https://openalex.org/I72951846"]},{"raw_affiliation_string":"Sch. of Electr. Eng. & Comput. Sci.,, Washington State Univ., Pullman, WA, USA","institution_ids":["https://openalex.org/I72951846"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100442930"],"corresponding_institution_ids":["https://openalex.org/I72951846"],"apc_list":null,"apc_paid":null,"fwci":0.7094,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.74170475,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"340","last_page":"343"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.7040482759475708},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.6403389573097229},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6395393013954163},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6201620697975159},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6173141598701477},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5712075233459473},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4718480110168457},{"id":"https://openalex.org/keywords/monte-carlo-method","display_name":"Monte Carlo method","score":0.45382392406463623},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4475657045841217},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.4363255500793457},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.4253007769584656},{"id":"https://openalex.org/keywords/reduction","display_name":"Reduction (mathematics)","score":0.41650623083114624},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.414247989654541},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4114447832107544},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38142430782318115},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.239303320646286},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17249271273612976},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.16423991322517395},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13050153851509094},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0730375349521637}],"concepts":[{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7040482759475708},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.6403389573097229},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6395393013954163},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6201620697975159},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6173141598701477},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5712075233459473},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4718480110168457},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.45382392406463623},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4475657045841217},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.4363255500793457},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.4253007769584656},{"id":"https://openalex.org/C111335779","wikidata":"https://www.wikidata.org/wiki/Q3454686","display_name":"Reduction (mathematics)","level":2,"score":0.41650623083114624},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.414247989654541},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4114447832107544},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38142430782318115},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.239303320646286},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17249271273612976},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.16423991322517395},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13050153851509094},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0730375349521637},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwscas.2013.6674655","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwscas.2013.6674655","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1991561423","https://openalex.org/W1998525920","https://openalex.org/W2055673935","https://openalex.org/W2067058956","https://openalex.org/W2095913060","https://openalex.org/W2100503779","https://openalex.org/W2103873102","https://openalex.org/W2130668856","https://openalex.org/W2134457069","https://openalex.org/W2135568344","https://openalex.org/W2135991554","https://openalex.org/W2144383902","https://openalex.org/W2170417876","https://openalex.org/W3103272194","https://openalex.org/W3144591591"],"related_works":["https://openalex.org/W2997919932","https://openalex.org/W4224860143","https://openalex.org/W2010483191","https://openalex.org/W2562173707","https://openalex.org/W2297319780","https://openalex.org/W4247832579","https://openalex.org/W4240835171","https://openalex.org/W2520795347","https://openalex.org/W3156670728","https://openalex.org/W2892303075"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"we":[3],"report":[4],"an":[5,15],"in-depth":[6],"study":[7],"of":[8,62],"power":[9,25,73,100,129],"supply":[10,101,130],"reduction":[11],"towards":[12],"near-threshold":[13,120],"for":[14],"8-transistor":[16],"CNTFET":[17],"SRAM":[18],"cell.":[19,145],"Near-threshold":[20],"voltage":[21,121],"provides":[22],"savings":[23],"in":[24],"consumption,":[26],"but":[27],"has":[28],"negative":[29],"impact":[30],"on":[31],"delays,":[32],"noise":[33],"margin":[34],"and":[35,95,112,134,139,152],"yield.":[36],"We":[37],"have":[38,53],"incorporated":[39],"a":[40,158],"removed":[41],"metallic":[42,70],"CNT":[43],"approach":[44],"to":[45,59,88,142],"deal":[46],"with":[47,56,127],"non-semiconductor":[48],"CNTs.":[49,71],"Monte":[50],"Carlo":[51],"simulations":[52],"shown":[54],"that":[55],"Vdd":[57,162],"down":[58],"0.5V,":[60],"0.72%":[61],"the":[63,69,79,97,107,116,125,143],"cells":[64],"are":[65],"non-functional":[66],"after":[67],"removing":[68],"The":[72],"saving":[74],"is":[75,82,103],"over":[76],"5X,":[77],"while":[78],"average":[80],"delay":[81],"increased":[83],"by":[84,137],"3.5X":[85],"as":[86],"compared":[87,141],"0.9V":[89],"Vdd.":[90],"To":[91],"further":[92],"improve":[93],"yield":[94],"performance,":[96],"gated":[98,128],"cell":[99,126,159],"technique":[102],"applied":[104],"which":[105],"weakens":[106],"pull-up":[108],"transistors":[109],"during":[110],"write":[111,117,132,135],"effectively":[113],"eliminates":[114],"all":[115],"failures":[118],"at":[119,160],"level.":[122],"At":[123],"Vdd=0.5V,":[124],"improves":[131],"performance":[133],"EDP":[136,156],"1.5X":[138],"2.9X":[140],"non-gated":[144],"It":[146],"also":[147],"saves":[148],"70%":[149],"total":[150],"energy":[151],"achieves":[153],"38%":[154],"lower":[155],"than":[157],"nominal":[161],"(0.9V).":[163]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}