{"id":"https://openalex.org/W2139447669","doi":"https://doi.org/10.1109/mtdt.2002.1029781","title":"Decreasing EEPROM programming bias with negative voltage, reliability impact","display_name":"Decreasing EEPROM programming bias with negative voltage, reliability impact","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2139447669","doi":"https://doi.org/10.1109/mtdt.2002.1029781","mag":"2139447669"},"language":"en","primary_location":{"id":"doi:10.1109/mtdt.2002.1029781","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mtdt.2002.1029781","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043533636","display_name":"R. Laffont","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210116669","display_name":"Ch\u00e2teau Gombert","ror":"https://ror.org/02kspbq18","country_code":"FR","type":"other","lineage":["https://openalex.org/I4210116669"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Laffont","raw_affiliation_strings":["L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France","ZI de Rousset, STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France","institution_ids":["https://openalex.org/I4210116669","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"ZI de Rousset, STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046382574","display_name":"J. Razafindramora","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210116669","display_name":"Ch\u00e2teau Gombert","ror":"https://ror.org/02kspbq18","country_code":"FR","type":"other","lineage":["https://openalex.org/I4210116669"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Razafindramora","raw_affiliation_strings":["L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France","institution_ids":["https://openalex.org/I4210116669","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112375581","display_name":"P. Canet","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210116669","display_name":"Ch\u00e2teau Gombert","ror":"https://ror.org/02kspbq18","country_code":"FR","type":"other","lineage":["https://openalex.org/I4210116669"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Canet","raw_affiliation_strings":["L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France","institution_ids":["https://openalex.org/I4210116669","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053003790","display_name":"R. Bouchakour","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210116669","display_name":"Ch\u00e2teau Gombert","ror":"https://ror.org/02kspbq18","country_code":"FR","type":"other","lineage":["https://openalex.org/I4210116669"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"R. Bouchakour","raw_affiliation_strings":["L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"L2MP/Polytech-UMR CNRS 6137, IMT Technop\u00f4le de Ch\u00e2teau Gombert, Marseilles, France","institution_ids":["https://openalex.org/I4210116669","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058357701","display_name":"J.M. Mirabel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.M. Mirabel","raw_affiliation_strings":["ZI de Rousset, STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ZI de Rousset, STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.20289843,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"168","last_page":"173"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.9950000047683716,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/eeprom","display_name":"EEPROM","score":0.9779611825942993},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6455392241477966},{"id":"https://openalex.org/keywords/eprom","display_name":"EPROM","score":0.6446042060852051},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.6260018348693848},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5180678367614746},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5071654319763184},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.491655170917511},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4599074721336365},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35726550221443176},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3444221615791321},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.338251531124115},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3212268650531769},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.24909192323684692},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.18748432397842407},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1713150143623352},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.1454448103904724},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12257784605026245},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.09057718515396118},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08827880024909973}],"concepts":[{"id":"https://openalex.org/C27699510","wikidata":"https://www.wikidata.org/wiki/Q205908","display_name":"EEPROM","level":2,"score":0.9779611825942993},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6455392241477966},{"id":"https://openalex.org/C163980746","wikidata":"https://www.wikidata.org/wiki/Q378210","display_name":"EPROM","level":2,"score":0.6446042060852051},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.6260018348693848},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5180678367614746},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5071654319763184},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.491655170917511},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4599074721336365},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35726550221443176},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3444221615791321},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.338251531124115},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3212268650531769},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.24909192323684692},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.18748432397842407},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1713150143623352},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.1454448103904724},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12257784605026245},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09057718515396118},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08827880024909973},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mtdt.2002.1029781","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mtdt.2002.1029781","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1985559999","https://openalex.org/W2114803257","https://openalex.org/W2808648285"],"related_works":["https://openalex.org/W2083975737","https://openalex.org/W2053931924","https://openalex.org/W1853632475","https://openalex.org/W2142133575","https://openalex.org/W2028906339","https://openalex.org/W2134529477","https://openalex.org/W1870416553","https://openalex.org/W2510382096","https://openalex.org/W2032705268","https://openalex.org/W1575283165"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,30,33,44],"study":[4],"of":[5,16,52,64],"EEPROM":[6],"cell":[7,31,46,75],"programming":[8],"in":[9],"order":[10],"to":[11,26],"decrease":[12],"the":[13,17,53,57,65,91],"bias":[14],"polarization":[15],"memory":[18,45,83],"cell.":[19],"Simulations":[20],"show":[21,61,90],"that":[22,68],"it":[23],"is":[24,71],"possible":[25],"erase":[27],"and":[28,39],"write":[29],"with":[32,37,85],"divide":[34,86],"up":[35,87],"polarization,":[36],"positive":[38],"negative":[40],"pulses.":[41],"Measurements":[42],"on":[43,74,81],"confirm":[47],"these":[48],"statements.":[49],"Moreover":[50],"simulations":[51],"electrical":[54],"field":[55],"through":[56],"tunnel":[58],"oxide":[59],"didn't":[60],"any":[62],"change":[63],"maximum":[66],"value,":[67],"means":[69],"there":[70],"no":[72],"impact":[73],"reliability.":[76],"Endurance":[77],"tests":[78],"were":[79],"performed":[80],"several":[82],"cells":[84],"polarizations.":[88],"They":[89],"same":[92],"results":[93],"as":[94],"classical":[95],"programming.":[96]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}