{"id":"https://openalex.org/W2108623581","doi":"https://doi.org/10.1109/mse.2011.5937093","title":"Learning nanotechnology through crossbar-based architecture and Carbon Nanotube(CNT) FETs","display_name":"Learning nanotechnology through crossbar-based architecture and Carbon Nanotube(CNT) FETs","publication_year":2011,"publication_date":"2011-06-01","ids":{"openalex":"https://openalex.org/W2108623581","doi":"https://doi.org/10.1109/mse.2011.5937093","mag":"2108623581"},"language":"en","primary_location":{"id":"doi:10.1109/mse.2011.5937093","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mse.2011.5937093","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Conference on Microelectronic Systems Education","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042494924","display_name":"In-Seok Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Inseok Jung","raw_affiliation_strings":["Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","Electrical and Computer Engineering, Northeastern University, Boston, MA 02115#TAB#"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Electrical and Computer Engineering, Northeastern University, Boston, MA 02115#TAB#","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062907955","display_name":"Elizabeth R. Kim","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Elizabeth R. Kim","raw_affiliation_strings":["Saint Marks School, Southborough, MA, USA","Saint Mark's School, Southborough, MA 01772, USA"],"affiliations":[{"raw_affiliation_string":"Saint Marks School, Southborough, MA, USA","institution_ids":[]},{"raw_affiliation_string":"Saint Mark's School, Southborough, MA 01772, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102967917","display_name":"Minsu Choi","orcid":"https://orcid.org/0000-0002-9104-0563"},"institutions":[{"id":"https://openalex.org/I20382870","display_name":"Missouri University of Science and Technology","ror":"https://ror.org/00scwqd12","country_code":"US","type":"education","lineage":["https://openalex.org/I20382870"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Minsu Choi","raw_affiliation_strings":["Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, MO, USA","Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, MO, USA","institution_ids":["https://openalex.org/I20382870"]},{"raw_affiliation_string":"Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA","institution_ids":["https://openalex.org/I20382870"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5042494924"],"corresponding_institution_ids":["https://openalex.org/I12912129"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.15335402,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"289","issue":null,"first_page":"60","last_page":"63"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T13182","display_name":"Quantum-Dot Cellular Automata","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/1703","display_name":"Computational Theory and Mathematics"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.8457257747650146},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.675737202167511},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.673950731754303},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5367727279663086},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.48969629406929016},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4788210988044739},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.47338882088661194},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4320725202560425},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.42093753814697266},{"id":"https://openalex.org/keywords/architecture","display_name":"Architecture","score":0.41446366906166077},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34573858976364136},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3351272940635681},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26074427366256714},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1825108826160431},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.13552743196487427},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.12897968292236328}],"concepts":[{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.8457257747650146},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.675737202167511},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.673950731754303},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5367727279663086},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.48969629406929016},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4788210988044739},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.47338882088661194},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4320725202560425},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.42093753814697266},{"id":"https://openalex.org/C123657996","wikidata":"https://www.wikidata.org/wiki/Q12271","display_name":"Architecture","level":2,"score":0.41446366906166077},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34573858976364136},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3351272940635681},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26074427366256714},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1825108826160431},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.13552743196487427},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.12897968292236328},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mse.2011.5937093","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mse.2011.5937093","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Conference on Microelectronic Systems Education","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.5400000214576721,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1992764350","https://openalex.org/W2006296100","https://openalex.org/W2019219628","https://openalex.org/W2039108575","https://openalex.org/W2040709886","https://openalex.org/W2047507725","https://openalex.org/W2052520871","https://openalex.org/W2098874598","https://openalex.org/W2142307580","https://openalex.org/W2162983760","https://openalex.org/W6663771693"],"related_works":["https://openalex.org/W2385877031","https://openalex.org/W2145932742","https://openalex.org/W1874409533","https://openalex.org/W2381853949","https://openalex.org/W2554791727","https://openalex.org/W1981395029","https://openalex.org/W2108083791","https://openalex.org/W4250137794","https://openalex.org/W2063341228","https://openalex.org/W2111673944"],"abstract_inverted_index":{"As":[0],"nanotechnology":[1,41,49,81],"is":[2,6,34],"emerging,":[3],"(1)":[4],"there":[5],"a":[7,45,71],"strong":[8],"need":[9],"for":[10,40,79],"well-educated":[11],"nanoscale":[12,29],"systems":[13,30],"engineers":[14],"by":[15,50],"industry,":[16],"and":[17,20,42,56,102],"(2)":[18],"research":[19],"education":[21],"efforts":[22],"are":[23],"also":[24],"called":[25],"to":[26,35,43,47,106],"overcome":[27],"numerous":[28],"issues.":[31],"This":[32],"paper":[33],"identify":[36],"necessary":[37],"teaching":[38,74],"elements":[39],"propose":[44],"way":[46],"teach":[48],"introducing":[51],"emerging":[52],"technologies:":[53],"Crossbar-based":[54],"Nano-Architecture":[55],"Carbon":[57],"Nanotube":[58],"FETs.":[59],"By":[60],"investigating":[61],"read-out":[62],"scheme":[63],"of":[64,73,85],"the":[65,86,90,107],"crossbar":[66,92],"memory":[67,93,109],"architectures":[68],"with":[69],"students,":[70],"set":[72],"items":[75],"have":[76],"been":[77],"identified":[78],"undergraduate":[80],"curriculum.":[82],"The":[83],"simulation":[84],"student":[87],"shows":[88],"that":[89],"CNTFET-based":[91],"achieves":[94],"improvements":[95],"in":[96],"both":[97],"sensing":[98],"voltages":[99],"on/off":[100],"ratio":[101],"noise":[103],"margin":[104],"compared":[105],"molecular":[108],"implementation.":[110]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}