{"id":"https://openalex.org/W4412560704","doi":"https://doi.org/10.1109/mocast65744.2025.11083921","title":"Thermal-Compensated MRAM Sensing: Dynamic TMR Stabilization Across Wide Temperature Range","display_name":"Thermal-Compensated MRAM Sensing: Dynamic TMR Stabilization Across Wide Temperature Range","publication_year":2025,"publication_date":"2025-06-11","ids":{"openalex":"https://openalex.org/W4412560704","doi":"https://doi.org/10.1109/mocast65744.2025.11083921"},"language":"en","primary_location":{"id":"doi:10.1109/mocast65744.2025.11083921","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast65744.2025.11083921","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100665425","display_name":"Tuo Zhang","orcid":"https://orcid.org/0000-0002-6075-3384"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Tuo Zhang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077544512","display_name":"Xinpeng Jiang","orcid":"https://orcid.org/0000-0002-1548-3637"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinpeng Jiang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100407149","display_name":"Chao Wang","orcid":"https://orcid.org/0000-0003-4836-7648"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chao Wang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071375151","display_name":"Wang Bi","orcid":"https://orcid.org/0000-0002-3591-4764"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bi Wang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062318007","display_name":"Hongxi Liu","orcid":"https://orcid.org/0000-0002-6300-8582"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hongxi Liu","raw_affiliation_strings":["Truth Memory Corporation,Beijing,China"],"affiliations":[{"raw_affiliation_string":"Truth Memory Corporation,Beijing,China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102918236","display_name":"Kaihua Cao","orcid":"https://orcid.org/0000-0002-5060-4465"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaihua Cao","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100362317","display_name":"Xuan Li","orcid":"https://orcid.org/0000-0002-6552-269X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xuan Li","raw_affiliation_strings":["Truth Memory Corporation,Beijing,China"],"affiliations":[{"raw_affiliation_string":"Truth Memory Corporation,Beijing,China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045502439","display_name":"Hui Jin","orcid":"https://orcid.org/0000-0002-1637-9946"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hui Jin","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088376176","display_name":"Geifei Wang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Geifei Wang","raw_affiliation_strings":["Truth Memory Corporation,Beijing,China"],"affiliations":[{"raw_affiliation_string":"Truth Memory Corporation,Beijing,China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056897117","display_name":"Zhaohao Wang","orcid":"https://orcid.org/0000-0002-2999-7903"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhaohao Wang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100420142","display_name":"He Zhang","orcid":"https://orcid.org/0000-0003-0504-1867"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"He Zhang","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066473925","display_name":"Weisheng Zhao","orcid":"https://orcid.org/0000-0001-8088-0404"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China"],"affiliations":[{"raw_affiliation_string":"School of Integrated Circuit Science and Engineering, Beihang University,Beijing,China","institution_ids":["https://openalex.org/I82880672"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5100665425"],"corresponding_institution_ids":["https://openalex.org/I82880672"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.15987499,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11993","display_name":"Atomic and Subatomic Physics Research","score":0.9660000205039978,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11993","display_name":"Atomic and Subatomic Physics Research","score":0.9660000205039978,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11949","display_name":"Nuclear Physics and Applications","score":0.9613999724388123,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12564","display_name":"Sensor Technology and Measurement Systems","score":0.9476000070571899,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8867552876472473},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.615190327167511},{"id":"https://openalex.org/keywords/atmospheric-temperature-range","display_name":"Atmospheric temperature range","score":0.5808459520339966},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5332334637641907},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.4663466811180115},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.44719576835632324},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.43017470836639404},{"id":"https://openalex.org/keywords/dynamic-range","display_name":"Dynamic range","score":0.42226916551589966},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33127522468566895},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.29574650526046753},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2575936019420624},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1595977246761322},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12218290567398071},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09360021352767944},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.09031158685684204},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.08304595947265625}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8867552876472473},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.615190327167511},{"id":"https://openalex.org/C39353612","wikidata":"https://www.wikidata.org/wiki/Q5283759","display_name":"Atmospheric temperature range","level":2,"score":0.5808459520339966},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5332334637641907},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.4663466811180115},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44719576835632324},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.43017470836639404},{"id":"https://openalex.org/C87133666","wikidata":"https://www.wikidata.org/wiki/Q1161699","display_name":"Dynamic range","level":2,"score":0.42226916551589966},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33127522468566895},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.29574650526046753},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2575936019420624},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1595977246761322},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12218290567398071},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09360021352767944},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.09031158685684204},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.08304595947265625}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast65744.2025.11083921","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast65744.2025.11083921","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8199999928474426,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1974831841","https://openalex.org/W2000185494","https://openalex.org/W2110276925","https://openalex.org/W2133201500","https://openalex.org/W2529411520","https://openalex.org/W2539008933","https://openalex.org/W3049464145","https://openalex.org/W3172819050","https://openalex.org/W4212978797","https://openalex.org/W4286571721","https://openalex.org/W4385532481","https://openalex.org/W4391974641","https://openalex.org/W4404035734","https://openalex.org/W4407691986"],"related_works":["https://openalex.org/W2790139797","https://openalex.org/W3146164987","https://openalex.org/W2086829516","https://openalex.org/W2141626281","https://openalex.org/W2472395098","https://openalex.org/W2128922810","https://openalex.org/W1641143370","https://openalex.org/W2507745370","https://openalex.org/W2889599805","https://openalex.org/W4318601828"],"abstract_inverted_index":{"The":[0],"Spin-Orbit":[1],"Torque":[2],"Magnetic":[3],"Random":[4],"Access":[5],"Memory":[6],"(SOT-MRAM)":[7],"demonstrates":[8],"significant":[9],"potential":[10],"for":[11,74],"high-speed,":[12],"low-power":[13],"applications,":[14],"garnering":[15],"considerable":[16],"attention":[17],"from":[18,85,106,114],"both":[19],"academia":[20],"and":[21,50],"industry.":[22],"However,":[23],"due":[24],"to":[25,55,87,108,116],"the":[26,46,56,103,111,127,136],"physical":[27],"properties":[28],"of":[29,48,58,124,150],"magnetic":[30],"tunnel":[31,35],"junction":[32],"(MTJ)":[33],"itself,":[34],"magnetoresistance":[36],"ratio":[37],"(TMR)":[38],"will":[39],"decrease":[40],"with":[41],"increasing":[42],"temperature,":[43],"thereby":[44],"reducing":[45],"reliability":[47,146],"MRAM":[49,59],"posing":[51],"a":[52,68,81,120,132,141],"key":[53],"challenge":[54],"application":[57],"chips.":[60],"To":[61],"address":[62],"this":[63,65],"issue,":[64],"paper":[66],"proposed":[67,128],"reliable":[69],"temperature-adaptive":[70],"Sensing":[71],"Scheme":[72],"(TASS)":[73],"SOT-MRAM,":[75],"which":[76],"can":[77],"stabilize":[78],"TMR":[79,104],"across":[80],"wide":[82],"temperature":[83,112,138],"range":[84],"\u221240\u00b0C":[86,115],"125\u00b0C":[88],"by":[89,147],"dynamically":[90],"adjust":[91],"read":[92,145],"voltage.":[93],"Simulation":[94],"results":[95],"at":[96],"28":[97],"nm":[98],"indicate":[99],"that":[100],"TASS":[101],"reduces":[102],"degradation":[105],"25%":[107],"5%":[109],"as":[110],"increases":[113],"125\u00b0C,":[117],"while":[118],"exhibiting":[119],"current":[121],"adjustment":[122],"capability":[123],"142%.":[125],"Furthermore,":[126],"readout":[129],"circuit":[130],"ensures":[131],"lower":[133],"worst-BER":[134],"over":[135],"same":[137],"range,":[139],"providing":[140],"substantial":[142],"enhancement":[143],"in":[144],"3":[148],"orders":[149],"magnitude.":[151]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}