{"id":"https://openalex.org/W4412560795","doi":"https://doi.org/10.1109/mocast65744.2025.11083898","title":"Coexistence of Resistive Capacitive and Virtual Inductive Effects in Memristive Devices","display_name":"Coexistence of Resistive Capacitive and Virtual Inductive Effects in Memristive Devices","publication_year":2025,"publication_date":"2025-06-11","ids":{"openalex":"https://openalex.org/W4412560795","doi":"https://doi.org/10.1109/mocast65744.2025.11083898"},"language":"en","primary_location":{"id":"doi:10.1109/mocast65744.2025.11083898","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast65744.2025.11083898","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072586946","display_name":"Sahitya Yarragolla","orcid":"https://orcid.org/0000-0002-2973-4943"},"institutions":[{"id":"https://openalex.org/I32021983","display_name":"Kiel University","ror":"https://ror.org/04v76ef78","country_code":"DE","type":"education","lineage":["https://openalex.org/I32021983"]},{"id":"https://openalex.org/I3133086891","display_name":"Fachhochschule Kiel","ror":"https://ror.org/03q0ab227","country_code":"DE","type":"education","lineage":["https://openalex.org/I3133086891"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Sahitya Yarragolla","raw_affiliation_strings":["Theoretical Electrical Engineering, Kiel University,Faculty of Engineering,Kiel,Germany,24143"],"affiliations":[{"raw_affiliation_string":"Theoretical Electrical Engineering, Kiel University,Faculty of Engineering,Kiel,Germany,24143","institution_ids":["https://openalex.org/I3133086891","https://openalex.org/I32021983"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042583722","display_name":"Torben Hemke","orcid":"https://orcid.org/0000-0003-2436-5840"},"institutions":[{"id":"https://openalex.org/I904495901","display_name":"Ruhr University Bochum","ror":"https://ror.org/04tsk2644","country_code":"DE","type":"education","lineage":["https://openalex.org/I904495901"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Torben Hemke","raw_affiliation_strings":["Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum,Bochum,Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum,Bochum,Germany","institution_ids":["https://openalex.org/I904495901"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080720465","display_name":"Jan Trieschmann","orcid":"https://orcid.org/0000-0001-9136-8019"},"institutions":[{"id":"https://openalex.org/I32021983","display_name":"Kiel University","ror":"https://ror.org/04v76ef78","country_code":"DE","type":"education","lineage":["https://openalex.org/I32021983"]},{"id":"https://openalex.org/I3133086891","display_name":"Fachhochschule Kiel","ror":"https://ror.org/03q0ab227","country_code":"DE","type":"education","lineage":["https://openalex.org/I3133086891"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jan Trieschmann","raw_affiliation_strings":["Theoretical Electrical Engineering, Kiel University,Faculty of Engineering,Kiel,Germany,24143"],"affiliations":[{"raw_affiliation_string":"Theoretical Electrical Engineering, Kiel University,Faculty of Engineering,Kiel,Germany,24143","institution_ids":["https://openalex.org/I3133086891","https://openalex.org/I32021983"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5043185650","display_name":"Thomas Mussenbrock","orcid":"https://orcid.org/0000-0001-6445-4990"},"institutions":[{"id":"https://openalex.org/I904495901","display_name":"Ruhr University Bochum","ror":"https://ror.org/04tsk2644","country_code":"DE","type":"education","lineage":["https://openalex.org/I904495901"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Mussenbrock","raw_affiliation_strings":["Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum,Bochum,Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum,Bochum,Germany","institution_ids":["https://openalex.org/I904495901"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5072586946"],"corresponding_institution_ids":["https://openalex.org/I3133086891","https://openalex.org/I32021983"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.20261605,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9842000007629395,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11434","display_name":"Electrochemical Analysis and Applications","score":0.9758999943733215,"subfield":{"id":"https://openalex.org/subfields/1603","display_name":"Electrochemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.8572331666946411},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.8064940571784973},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.5437809228897095},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5285937786102295},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.5272839665412903},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5057063102722168},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47053062915802},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33750778436660767},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3278103470802307},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19371217489242554},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16568312048912048}],"concepts":[{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.8572331666946411},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.8064940571784973},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.5437809228897095},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5285937786102295},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5272839665412903},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5057063102722168},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47053062915802},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33750778436660767},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3278103470802307},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19371217489242554},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16568312048912048}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast65744.2025.11083898","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast65744.2025.11083898","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2310031058","display_name":null,"funder_award_id":"2332/10-1","funder_id":"https://openalex.org/F4320320879","funder_display_name":"Deutsche Forschungsgemeinschaft"}],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W656433898","https://openalex.org/W1439015800","https://openalex.org/W1975229527","https://openalex.org/W1990296406","https://openalex.org/W2082948994","https://openalex.org/W2150571394","https://openalex.org/W2899544551","https://openalex.org/W3006565411","https://openalex.org/W3195943422","https://openalex.org/W3216135167","https://openalex.org/W4225295804","https://openalex.org/W4310172260","https://openalex.org/W4384499556","https://openalex.org/W4390062155","https://openalex.org/W4391335016","https://openalex.org/W4399621563","https://openalex.org/W4405895659","https://openalex.org/W6678225822"],"related_works":["https://openalex.org/W3173413269","https://openalex.org/W3142313280","https://openalex.org/W2059048848","https://openalex.org/W4391359919","https://openalex.org/W4410203691","https://openalex.org/W2199653281","https://openalex.org/W2557839727","https://openalex.org/W2969719637","https://openalex.org/W51629545","https://openalex.org/W2093650582"],"abstract_inverted_index":{"This":[0,112],"paper":[1],"examines":[2,126],"the":[3,20,34,70,80,87,91,106,124,128,131,139],"coexistence":[4],"of":[5,60,96,130],"resistive,":[6],"capacitive,":[7],"and":[8,58,64,79,105,142],"virtual":[9],"inductive":[10],"effects":[11],"in":[12,40,50,120,134,138],"memristive":[13,42],"devices,":[14,18],"focusing":[15],"on":[16],"ReRAM":[17],"specifically":[19],"interface-type":[21],"analog":[22],"switching":[23,39],"devices.":[24,43,122],"A":[25],"physics-inspired":[26],"compact":[27],"model":[28,45,113],"is":[29,84],"used":[30],"to":[31,53,136],"effectively":[32],"capture":[33],"underlying":[35],"mechanisms":[36],"governing":[37],"resistive":[38],"oxide-based":[41],"The":[44,72],"includes":[46],"different":[47],"capacitive":[48,55],"components":[49],"metal-oxide-metal":[51],"structures":[52],"simulate":[54],"effects.":[56],"Drift":[57],"diffusion":[59],"particles":[61],"are":[62],"modeled":[63],"correlated":[65],"with":[66,102],"particles'":[67],"inertia":[68],"within":[69],"system.":[71],"inertial":[73],"lag":[74],"between":[75],"particle":[76],"drift":[77],"velocity":[78],"applied":[81],"electric":[82],"field":[83],"analyzed.":[85],"Using":[86],"model,":[88],"we":[89],"obtain":[90],"<tex":[92,108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[93,109],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$I-V$</tex>":[94],"characteristics":[95],"devices":[97],"that":[98],"show":[99],"good":[100],"agreement":[101],"experimental":[103],"findings":[104],"corresponding":[107],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$C-V$</tex>":[110],"characteristics.":[111],"also":[114],"replicates":[115],"observed":[116],"non-zero":[117],"crossing":[118],"hysteresis":[119],"perovskite-based":[121],"Additionally,":[123],"study":[125],"how":[127],"reactance":[129],"device":[132,140],"changes":[133],"response":[135],"variations":[137],"area":[141],"length.":[143]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}