{"id":"https://openalex.org/W4401361813","doi":"https://doi.org/10.1109/mocast61810.2024.10615336","title":"Impact of the Interior Dielectric Constant on the Performance of CNTFET 10 nm","display_name":"Impact of the Interior Dielectric Constant on the Performance of CNTFET 10 nm","publication_year":2024,"publication_date":"2024-06-26","ids":{"openalex":"https://openalex.org/W4401361813","doi":"https://doi.org/10.1109/mocast61810.2024.10615336"},"language":"en","primary_location":{"id":"doi:10.1109/mocast61810.2024.10615336","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mocast61810.2024.10615336","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 13th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5106331007","display_name":"Beladam Fatiha","orcid":null},"institutions":[{"id":"https://openalex.org/I137407579","display_name":"Universit\u00e9 Oran 1 Ahmed Ben Bella","ror":"https://ror.org/059et2b68","country_code":"DZ","type":"education","lineage":["https://openalex.org/I137407579"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Beladam Fatiha","raw_affiliation_strings":["Université d'Oran 1 Ahmed Ben Bella,Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Université d'Oran 1 Ahmed Ben Bella,Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria","institution_ids":["https://openalex.org/I137407579"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016449756","display_name":"Lazzaz Abdelaziz","orcid":"https://orcid.org/0000-0003-3720-0957"},"institutions":[{"id":"https://openalex.org/I137407579","display_name":"Universit\u00e9 Oran 1 Ahmed Ben Bella","ror":"https://ror.org/059et2b68","country_code":"DZ","type":"education","lineage":["https://openalex.org/I137407579"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Lazzaz Abdelaziz","raw_affiliation_strings":["Université d'Oran 1 Ahmed Ben Bella,Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Université d'Oran 1 Ahmed Ben Bella,Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria","institution_ids":["https://openalex.org/I137407579"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004012815","display_name":"Khaled Bousbahi","orcid":null},"institutions":[{"id":"https://openalex.org/I137407579","display_name":"Universit\u00e9 Oran 1 Ahmed Ben Bella","ror":"https://ror.org/059et2b68","country_code":"DZ","type":"education","lineage":["https://openalex.org/I137407579"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Bousbahi Khaled","raw_affiliation_strings":["Université d'Oran 1,ESGEE d'Oran, Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Université d'Oran 1,ESGEE d'Oran, Laboratoire des Sciences de la Matière Condensée (LSMC),Oran,Algeria","institution_ids":["https://openalex.org/I137407579"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112910413","display_name":"Ghamnia Mustapha","orcid":null},"institutions":[{"id":"https://openalex.org/I193291145","display_name":"Schiller International University","ror":"https://ror.org/003tmp461","country_code":"FR","type":"education","lineage":["https://openalex.org/I193291145"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Ghamnia Mustapha","raw_affiliation_strings":["Universite d'Oran 1,Laboratoire des Sciences de la Matière Condensée (LSMC)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universite d'Oran 1,Laboratoire des Sciences de la Matière Condensée (LSMC)","institution_ids":["https://openalex.org/I193291145"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1856,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.48773642,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"01","last_page":"04"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.7100362777709961},{"id":"https://openalex.org/keywords/constant","display_name":"Constant (computer programming)","score":0.5549830198287964},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.550133466720581},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.5131524205207825},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39683353900909424},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3205832242965698},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3008703589439392},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.22399774193763733},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20729902386665344},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14195546507835388},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0763317346572876},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06492936611175537}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7100362777709961},{"id":"https://openalex.org/C2777027219","wikidata":"https://www.wikidata.org/wiki/Q1284190","display_name":"Constant (computer programming)","level":2,"score":0.5549830198287964},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.550133466720581},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.5131524205207825},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39683353900909424},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3205832242965698},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3008703589439392},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22399774193763733},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20729902386665344},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14195546507835388},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0763317346572876},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06492936611175537},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast61810.2024.10615336","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/mocast61810.2024.10615336","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 13th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6399999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1590842594","https://openalex.org/W1940601017","https://openalex.org/W1998107126","https://openalex.org/W1999529041","https://openalex.org/W2021909294","https://openalex.org/W2070786551","https://openalex.org/W2120992127","https://openalex.org/W2135407913","https://openalex.org/W2543617612","https://openalex.org/W2602950819","https://openalex.org/W3004387660","https://openalex.org/W3032902668","https://openalex.org/W3108766514","https://openalex.org/W3136330968","https://openalex.org/W3215715200","https://openalex.org/W4220935336","https://openalex.org/W4246161403","https://openalex.org/W4297518358","https://openalex.org/W4300236598","https://openalex.org/W4361186110","https://openalex.org/W4387485820","https://openalex.org/W4399070375"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3193351953","https://openalex.org/W3215192800","https://openalex.org/W2506914694","https://openalex.org/W2166089870","https://openalex.org/W2763543933","https://openalex.org/W2047924497","https://openalex.org/W2016459817","https://openalex.org/W2921002219","https://openalex.org/W2731505726"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"analyze":[4],"the":[5,8,15,19,29,36,39,45,50,58],"impact":[6,27],"of":[7,21,38,68],"interior":[9,41],"low":[10,40],"dielectric":[11,42],"constant":[12,43],"material":[13],"inside":[14],"Carbon":[16],"Nanotube":[17],"on":[18,28,44],"performance":[20,59,67],"CNTFET":[22,46],"10":[23],"nm":[24],"and":[25,55],"their":[26],"leakage":[30,51],"current.":[31],"Our":[32],"results":[33],"show":[34],"that":[35],"use":[37],"structure":[47],"can":[48],"minimize":[49],"current":[52],"by":[53],"13.6%":[54],"therefore":[56],"improves":[57],"ratio":[60],"so":[61],"as":[62],"to":[63],"have":[64],"a":[65],"good":[66],"CMOS":[69],"circuits.":[70]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}