{"id":"https://openalex.org/W2952234716","doi":"https://doi.org/10.1109/mocast.2019.8742066","title":"Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications","display_name":"Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications","publication_year":2019,"publication_date":"2019-05-01","ids":{"openalex":"https://openalex.org/W2952234716","doi":"https://doi.org/10.1109/mocast.2019.8742066","mag":"2952234716"},"language":"en","primary_location":{"id":"doi:10.1109/mocast.2019.8742066","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2019.8742066","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090635177","display_name":"Ajay Kumar","orcid":"https://orcid.org/0000-0001-8043-8253"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ajay Kumar","raw_affiliation_strings":["Electrical Engineering Department, Delhi Technological University, Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067885508","display_name":"Neha Gupta","orcid":"https://orcid.org/0000-0001-8181-541X"},"institutions":[{"id":"https://openalex.org/I105454292","display_name":"Guru Gobind Singh Indraprastha University","ror":"https://ror.org/034q1za58","country_code":"IN","type":"education","lineage":["https://openalex.org/I105454292"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Neha Gupta","raw_affiliation_strings":["Applied Science and Humanity Department, Indraprastha University, Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Science and Humanity Department, Indraprastha University, Delhi, India","institution_ids":["https://openalex.org/I105454292"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029988366","display_name":"M. M. Tripathi","orcid":"https://orcid.org/0000-0003-1675-1039"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M.M. Tripathi","raw_affiliation_strings":["Electrical Engineering Department, Delhi Technological University, Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038751035","display_name":"Rishu Chaujar","orcid":"https://orcid.org/0000-0002-0161-8449"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rishu Chaujar","raw_affiliation_strings":["Applied Physics Department, Delhi Technological University, Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Physics Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"5","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/admittance","display_name":"Admittance","score":0.7200515270233154},{"id":"https://openalex.org/keywords/scattering-parameters","display_name":"Scattering parameters","score":0.6585663557052612},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.6116296052932739},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.5911282300949097},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.5823338031768799},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5626604557037354},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.5612622499465942},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49645930528640747},{"id":"https://openalex.org/keywords/small-signal-model","display_name":"Small-signal model","score":0.4525649845600128},{"id":"https://openalex.org/keywords/admittance-parameters","display_name":"Admittance parameters","score":0.4238305985927582},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41761448979377747},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39944395422935486},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.340393990278244},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.30820101499557495},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.293670117855072},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20460906624794006},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16312897205352783},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1050763726234436}],"concepts":[{"id":"https://openalex.org/C108811297","wikidata":"https://www.wikidata.org/wiki/Q214518","display_name":"Admittance","level":3,"score":0.7200515270233154},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.6585663557052612},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.6116296052932739},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.5911282300949097},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.5823338031768799},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5626604557037354},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.5612622499465942},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49645930528640747},{"id":"https://openalex.org/C2781038218","wikidata":"https://www.wikidata.org/wiki/Q1773875","display_name":"Small-signal model","level":3,"score":0.4525649845600128},{"id":"https://openalex.org/C133833761","wikidata":"https://www.wikidata.org/wiki/Q16001847","display_name":"Admittance parameters","level":3,"score":0.4238305985927582},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41761448979377747},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39944395422935486},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.340393990278244},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.30820101499557495},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.293670117855072},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20460906624794006},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16312897205352783},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1050763726234436},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast.2019.8742066","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2019.8742066","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.4399999976158142,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320328353","display_name":"Jaypee Institute of Information Technology","ror":"https://ror.org/05sttyy11"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W622342603","https://openalex.org/W1648354204","https://openalex.org/W2017015958","https://openalex.org/W2038722069","https://openalex.org/W2072986614","https://openalex.org/W2117820617","https://openalex.org/W2151323567","https://openalex.org/W2152761536","https://openalex.org/W2283775418","https://openalex.org/W2807796712"],"related_works":["https://openalex.org/W2563111511","https://openalex.org/W2913402129","https://openalex.org/W2161728531","https://openalex.org/W2044195815","https://openalex.org/W2541620444","https://openalex.org/W2057151759","https://openalex.org/W2368309484","https://openalex.org/W2066729819","https://openalex.org/W2460740512","https://openalex.org/W2020193002"],"abstract_inverted_index":{"This":[0],"work":[1],"reported":[2],"an":[3],"accurate":[4],"modeling":[5],"of":[6,12,44],"the":[7,27,95,134,144],"non-quasi-static":[8],"small":[9,28,135],"signal":[10,29,136],"model":[11],"Transparent":[13],"Gate":[14],"Recessed":[15],"Channel":[16],"(TGRC)":[17],"MOSFET":[18],"in":[19,42,94,118],"parameter":[20,114],"perspective":[21],"using":[22],"ATLAS-3D":[23],"device":[24,113],"simulator.":[25],"From":[26],"equivalent":[30],"circuit,":[31],"simulated":[32,124],"and":[33,51,105,115,123],"modeled":[34,122,127],"results":[35,128],"are":[36,108,116],"compared":[37],"at":[38],"THz":[39],"frequency":[40],"range":[41],"terms":[43],"Y":[45],"(admittance)":[46],"parameters,":[47],"Z":[48],"(impedance)":[49],"parameters":[50,107],"h":[52],"(hybrid)":[53],"parameters.":[54],"The":[55],"input":[56],"impedance":[57],"enhances":[58],"by":[59,80],"89.4%":[60],"as":[61],"when":[62,82],"gate":[63],"length":[64],"(L":[65],"<sub":[66],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[67],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">G</sub>":[68],")":[69],"reduces":[70,87],"from":[71,88],"40":[72],"nm":[73,76,90,93,140],"to":[74,91,147],"20":[75],"while":[77],"it":[78,99],"improves":[79,133],"68.6%":[81],"negative":[83],"junction":[84],"depth":[85],"(NJD)":[86],"15":[89],"5":[92],"TGRC":[96,131],"device.":[97],"Moreover,":[98],"is":[100],"also":[101],"observed":[102],"that,":[103],"admittance":[104],"hybrid":[106],"significantly":[109],"improved":[110],"with":[111],"reduced":[112],"found":[117],"good":[119],"agreement":[120],"between":[121],"results.":[125],"All":[126],"show":[129],"that":[130],"design":[132],"behavior":[137],"for":[138,150],"sub-20":[139],"regime":[141],"thus,":[142],"providing":[143],"detailed":[145],"insight":[146],"RF":[148,151],"engineers":[149],"applications.":[152]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}