{"id":"https://openalex.org/W2949627779","doi":"https://doi.org/10.1109/mocast.2019.8741716","title":"Front-End Integrated Circuits for Readout of Large Area SiPMs at Cryogenic Temperature","display_name":"Front-End Integrated Circuits for Readout of Large Area SiPMs at Cryogenic Temperature","publication_year":2019,"publication_date":"2019-05-01","ids":{"openalex":"https://openalex.org/W2949627779","doi":"https://doi.org/10.1109/mocast.2019.8741716","mag":"2949627779"},"language":"en","primary_location":{"id":"doi:10.1109/mocast.2019.8741716","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2019.8741716","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091858335","display_name":"Alejandro D. Martinez R.","orcid":null},"institutions":[{"id":"https://openalex.org/I177477856","display_name":"Politecnico di Torino","ror":"https://ror.org/00bgk9508","country_code":"IT","type":"education","lineage":["https://openalex.org/I177477856"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Alejandro  D. Martinez R","raw_affiliation_strings":["Politecnico di Torino, Torino, Piemonte, IT"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Politecnico di Torino, Torino, Piemonte, IT","institution_ids":["https://openalex.org/I177477856"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5091858335"],"corresponding_institution_ids":["https://openalex.org/I177477856"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.04625426,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3103","display_name":"Astronomy and Astrophysics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/3103","display_name":"Astronomy and Astrophysics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11216","display_name":"Radiation Detection and Scintillator Technologies","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7482587099075317},{"id":"https://openalex.org/keywords/silicon-photomultiplier","display_name":"Silicon photomultiplier","score":0.6359979510307312},{"id":"https://openalex.org/keywords/front-and-back-ends","display_name":"Front and back ends","score":0.5692702531814575},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.524307370185852},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5237469673156738},{"id":"https://openalex.org/keywords/jitter","display_name":"Jitter","score":0.5232762098312378},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5097958445549011},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4654667377471924},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4486373960971832},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4120532274246216},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37638092041015625},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24483877420425415},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.13165971636772156},{"id":"https://openalex.org/keywords/scintillator","display_name":"Scintillator","score":0.07393258810043335}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7482587099075317},{"id":"https://openalex.org/C104335537","wikidata":"https://www.wikidata.org/wiki/Q1085747","display_name":"Silicon photomultiplier","level":4,"score":0.6359979510307312},{"id":"https://openalex.org/C53016008","wikidata":"https://www.wikidata.org/wiki/Q620167","display_name":"Front and back ends","level":2,"score":0.5692702531814575},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.524307370185852},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5237469673156738},{"id":"https://openalex.org/C134652429","wikidata":"https://www.wikidata.org/wiki/Q1052698","display_name":"Jitter","level":2,"score":0.5232762098312378},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5097958445549011},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4654667377471924},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4486373960971832},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4120532274246216},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37638092041015625},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24483877420425415},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.13165971636772156},{"id":"https://openalex.org/C161694136","wikidata":"https://www.wikidata.org/wiki/Q910990","display_name":"Scintillator","level":3,"score":0.07393258810043335},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast.2019.8741716","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2019.8741716","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5299999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1984761858","https://openalex.org/W2079358085","https://openalex.org/W2144016451","https://openalex.org/W2235570271","https://openalex.org/W2529033516","https://openalex.org/W2533832990","https://openalex.org/W2606844506","https://openalex.org/W2728953063","https://openalex.org/W2742012545","https://openalex.org/W2770108658","https://openalex.org/W2900937538","https://openalex.org/W2963269525","https://openalex.org/W3099032982","https://openalex.org/W3100927042","https://openalex.org/W4231340747"],"related_works":["https://openalex.org/W1122808991","https://openalex.org/W2191527367","https://openalex.org/W3082045444","https://openalex.org/W2921440212","https://openalex.org/W2127555349","https://openalex.org/W2038165008","https://openalex.org/W1988727626","https://openalex.org/W2108314163","https://openalex.org/W2384000497","https://openalex.org/W2794404576"],"abstract_inverted_index":{"This":[0],"work":[1],"describes":[2],"the":[3,13,48,53,93,96],"architecture":[4],"and":[5,29,35,47,67,70,114],"transistor-level":[6],"design":[7],"of":[8,15,64,81,95],"CMOS":[9,44],"front-end":[10],"amplifiers":[11],"for":[12,77,124],"readout":[14],"large":[16],"area":[17],"SiPMs":[18],"at":[19],"LAr":[20],"temperature":[21],"(87K).":[22],"Two":[23],"circuit":[24],"topologies,":[25],"based":[26],"on":[27],"trans-impedance":[28],"common-gate":[30],"input":[31],"stages,":[32],"are":[33,56],"discussed":[34],"compared.":[36],"Both":[37],"circuits":[38,59],"were":[39],"designed":[40],"using":[41],"a":[42,61,71,78,88,102,109,115,125],"standard":[43],"110nm":[45],"technology,":[46],"simulation":[49],"results":[50],"obtained":[51],"with":[52,101],"foundry":[54],"PDK":[55],"presented.":[57],"The":[58,84],"use":[60],"power":[62,72],"rail":[63],"+1.25":[65],"V":[66],"-1.25":[68],"V,":[69],"budget":[73],"below":[74],"100":[75],"mW,":[76],"total":[79],"gain":[80],"58":[82],"dB.":[83],"target":[85],"sensor":[86],"is":[87],"24cm2SiPM":[89],"tile":[90],"developed":[91],"in":[92],"framework":[94],"Darkside":[97],"Collaboration.":[98],"Post-layout":[99],"simulations":[100],"cryogenic":[103],"SiPM":[104],"electrical":[105],"model":[106],"indicate":[107],"that":[108],"signal-to-noise":[110],"ratio":[111],"above":[112],"8":[113],"jitter":[116],"better":[117],"than":[118],"15":[119],"ns":[120],"should":[121],"be":[122],"achieved":[123],"single":[126],"photoelectron.":[127]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}