{"id":"https://openalex.org/W2807929307","doi":"https://doi.org/10.1109/mocast.2018.8376649","title":"Time-based read circuit for multi-bit memristor memories","display_name":"Time-based read circuit for multi-bit memristor memories","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2807929307","doi":"https://doi.org/10.1109/mocast.2018.8376649","mag":"2807929307"},"language":"en","primary_location":{"id":"doi:10.1109/mocast.2018.8376649","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2018.8376649","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 7th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029911347","display_name":"Hagar Hossam","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Hagar Hossam","raw_affiliation_strings":["Electronics and Communications Engineering Department, Ain-Shams University, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Ain-Shams University, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107914788","display_name":"Mohamed A. El-Dessouky","orcid":null},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mohamed El-Dessouky","raw_affiliation_strings":["Electronics and Communications Engineering Department, Ain-Shams University, Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Ain-Shams University, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063929219","display_name":"Hassan Mostafa","orcid":"https://orcid.org/0000-0003-0043-5007"},"institutions":[{"id":"https://openalex.org/I145487455","display_name":"Cairo University","ror":"https://ror.org/03q21mh05","country_code":"EG","type":"education","lineage":["https://openalex.org/I145487455"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hassan Mostafa","raw_affiliation_strings":["Electronics and Communications Engineering Department, Cairo University., Egypt"],"affiliations":[{"raw_affiliation_string":"Electronics and Communications Engineering Department, Cairo University., Egypt","institution_ids":["https://openalex.org/I145487455"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5029911347"],"corresponding_institution_ids":["https://openalex.org/I107720978"],"apc_list":null,"apc_paid":null,"fwci":0.515,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.66873195,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9571503400802612},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6732699275016785},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.6275291442871094},{"id":"https://openalex.org/keywords/bit","display_name":"Bit (key)","score":0.6006571650505066},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5012180805206299},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.4960668981075287},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.4726390242576599},{"id":"https://openalex.org/keywords/4-bit","display_name":"4-bit","score":0.4412342309951782},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.43519580364227295},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.424392431974411},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.35972559452056885},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.34173887968063354},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32942986488342285},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14453819394111633},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13095396757125854},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.13090506196022034}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9571503400802612},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6732699275016785},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.6275291442871094},{"id":"https://openalex.org/C117011727","wikidata":"https://www.wikidata.org/wiki/Q1278488","display_name":"Bit (key)","level":2,"score":0.6006571650505066},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5012180805206299},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.4960668981075287},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.4726390242576599},{"id":"https://openalex.org/C194986542","wikidata":"https://www.wikidata.org/wiki/Q229932","display_name":"4-bit","level":3,"score":0.4412342309951782},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.43519580364227295},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.424392431974411},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.35972559452056885},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.34173887968063354},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32942986488342285},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14453819394111633},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13095396757125854},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.13090506196022034},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mocast.2018.8376649","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mocast.2018.8376649","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 7th International Conference on Modern Circuits and Systems Technologies (MOCAST)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8299999833106995}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2008901850","https://openalex.org/W2017417353","https://openalex.org/W2045966369","https://openalex.org/W2062952706","https://openalex.org/W2068007821","https://openalex.org/W2087261283","https://openalex.org/W2096286660","https://openalex.org/W2106343578","https://openalex.org/W2112181056","https://openalex.org/W2149441930","https://openalex.org/W2162651880","https://openalex.org/W2163031927","https://openalex.org/W2291365531"],"related_works":["https://openalex.org/W4242495027","https://openalex.org/W2100773763","https://openalex.org/W2898989424","https://openalex.org/W1968537616","https://openalex.org/W4285257158","https://openalex.org/W2019238062","https://openalex.org/W1494152240","https://openalex.org/W2790680353","https://openalex.org/W4298335860","https://openalex.org/W2963324269"],"abstract_inverted_index":{"Memristor":[0,14,30,64],"has":[1],"attracted":[2],"significant":[3],"attention":[4],"in":[5,61],"various":[6],"applications":[7],"including":[8],"single-bit":[9],"and":[10,47],"multi-bit":[11,16,80,101],"storage.":[12],"Utilizing":[13],"as":[15],"memory":[17,25,36],"is":[18,53,73],"a":[19,32,62,69,88],"promising":[20],"approach":[21],"to":[22,39,55,98],"enhance":[23],"the":[24,77,104],"density":[26],"for":[27,35],"next-generation":[28],"memory.":[29],"offers":[31],"good":[33],"alternative":[34],"design":[37],"due":[38],"low":[40],"power,":[41],"high":[42,45],"density,":[43],"non-volatility,":[44],"speed,":[46],"analog":[48,51],"behavior.":[49],"This":[50,83],"behavior":[52],"used":[54],"store":[56],"more":[57],"than":[58],"one":[59],"bit":[60],"single":[63],"cell.":[65],"In":[66],"this":[67],"work,":[68],"time-based":[70,84,89],"read":[71,78,85],"circuit":[72,86],"proposed":[74],"that":[75],"supports":[76],"of":[79,103],"storage":[81],"cells.":[82],"utilizes":[87],"analog-to-digital":[90],"converter":[91],"(T-ADC)":[92],"with":[93],"200":[94],"mV":[95],"dynamic":[96],"range":[97],"distinguish":[99],"between":[100],"states":[102],"Memristor.":[105]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}