{"id":"https://openalex.org/W2490422266","doi":"https://doi.org/10.1109/mixdes.2016.7529697","title":"Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model","display_name":"Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model","publication_year":2016,"publication_date":"2016-06-01","ids":{"openalex":"https://openalex.org/W2490422266","doi":"https://doi.org/10.1109/mixdes.2016.7529697","mag":"2490422266"},"language":"en","primary_location":{"id":"doi:10.1109/mixdes.2016.7529697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2016.7529697","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems","raw_type":"proceedings-article"},"type":"preprint","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hal.science/hal-03513616/document","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047776101","display_name":"Salim El Ghouli","orcid":"https://orcid.org/0000-0002-9146-2061"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Salim El Ghouli","raw_affiliation_strings":["STMicroelectronics, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074024839","display_name":"P. Scheer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Patrick Scheer","raw_affiliation_strings":["STMicroelectronics, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030975345","display_name":"M. Minondo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Michel Minondo","raw_affiliation_strings":["STMicroelectronics, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108450160","display_name":"A. Juge","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Andre Juge","raw_affiliation_strings":["STMicroelectronics, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071808895","display_name":"T. Poiroux","orcid":"https://orcid.org/0000-0002-9641-9652"},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Thierry Poiroux","raw_affiliation_strings":["CEA-Leti, Grenoble, France"],"affiliations":[{"raw_affiliation_string":"CEA-Leti, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112382067","display_name":"Jean Michel Sallese","orcid":null},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Jean Michel Sallese","raw_affiliation_strings":["EPFL, Lausanne, Switzerland"],"affiliations":[{"raw_affiliation_string":"EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055580961","display_name":"Christophe Lallement","orcid":"https://orcid.org/0000-0002-0708-7212"},"institutions":[{"id":"https://openalex.org/I68947357","display_name":"Universit\u00e9 de Strasbourg","ror":"https://ror.org/00pg6eq24","country_code":"FR","type":"education","lineage":["https://openalex.org/I68947357"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Christophe Lallement","raw_affiliation_strings":["ICube-University of Strasbourg, Strasbourg, France"],"affiliations":[{"raw_affiliation_string":"ICube-University of Strasbourg, Strasbourg, France","institution_ids":["https://openalex.org/I68947357"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5047776101"],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":1.1176,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.80505202,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"41","last_page":"46"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7945194840431213},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7245475649833679},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.5978248119354248},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5574183464050293},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5499087572097778},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5420705676078796},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.44109880924224854},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3306020498275757},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.3098437488079071},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.29060089588165283},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2735139727592468},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19013270735740662}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7945194840431213},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7245475649833679},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.5978248119354248},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5574183464050293},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5499087572097778},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5420705676078796},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.44109880924224854},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3306020498275757},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3098437488079071},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29060089588165283},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2735139727592468},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19013270735740662}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1109/mixdes.2016.7529697","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2016.7529697","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-03513616v1","is_oa":true,"landing_page_url":"https://hal.science/hal-03513616","pdf_url":"https://hal.science/hal-03513616/document","source":{"id":"https://openalex.org/S4406922461","display_name":"SPIRE - Sciences Po Institutional REpository","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"23rd International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Jun 2016, Lodz, Poland. ⟨10.1109/MIXDES.2016.7529697⟩","raw_type":"Conference papers"},{"id":"pmh:oai:infoscience.tind.io:221914","is_oa":true,"landing_page_url":"http://infoscience.epfl.ch/record/221914","pdf_url":null,"source":{"id":"https://openalex.org/S4306400487","display_name":"Infoscience (Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference proceedings"},{"id":"pmh:oai:univoak.eu:islandora_114054","is_oa":true,"landing_page_url":"https://univoak.eu/islandora/object/islandora%3A114054","pdf_url":null,"source":{"id":"https://openalex.org/S4306402449","display_name":"univOAK (4 institutions : Universit\u00e9 de Strasbourg, Universit\u00e9 de Haute Alsace, INSA Strasbourg, Biblioth\u00e8que Nationale et Universitaire de Strasbourg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210100283","host_organization_name":"Laboratoire des Sciences de l'Ing\u00e9nieur, de l'Informatique et de l'Imagerie","host_organization_lineage":["https://openalex.org/I4210100283"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"},{"id":"pmh:oai:univoak.eu:islandora_137952","is_oa":false,"landing_page_url":"https://univoak.eu/islandora/object/islandora%3A137952","pdf_url":null,"source":{"id":"https://openalex.org/S4306402449","display_name":"univOAK (4 institutions : Universit\u00e9 de Strasbourg, Universit\u00e9 de Haute Alsace, INSA Strasbourg, Biblioth\u00e8que Nationale et Universitaire de Strasbourg)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210100283","host_organization_name":"Laboratoire des Sciences de l'Ing\u00e9nieur, de l'Informatique et de l'Imagerie","host_organization_lineage":["https://openalex.org/I4210100283"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":{"id":"pmh:oai:HAL:hal-03513616v1","is_oa":true,"landing_page_url":"https://hal.science/hal-03513616","pdf_url":"https://hal.science/hal-03513616/document","source":{"id":"https://openalex.org/S4406922461","display_name":"SPIRE - Sciences Po Institutional REpository","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"23rd International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Jun 2016, Lodz, Poland. ⟨10.1109/MIXDES.2016.7529697⟩","raw_type":"Conference papers"},"sustainable_development_goals":[{"score":0.7599999904632568,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2490422266.pdf","grobid_xml":"https://content.openalex.org/works/W2490422266.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1507158039","https://openalex.org/W1539154688","https://openalex.org/W1552797650","https://openalex.org/W1792093535","https://openalex.org/W2010930893","https://openalex.org/W2021433466","https://openalex.org/W2022907768","https://openalex.org/W2023683737","https://openalex.org/W2036162573","https://openalex.org/W2045879795","https://openalex.org/W2092546884","https://openalex.org/W2116599744","https://openalex.org/W2122965295","https://openalex.org/W2129141986","https://openalex.org/W2138138937","https://openalex.org/W2147918770","https://openalex.org/W2167034725","https://openalex.org/W2176291803","https://openalex.org/W2572245457","https://openalex.org/W6649853279","https://openalex.org/W6679609378"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2572160370","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W4250300609","https://openalex.org/W2149895879","https://openalex.org/W2010357007","https://openalex.org/W2765340795","https://openalex.org/W2545707786","https://openalex.org/W2102078456"],"abstract_inverted_index":{"Ultra-Thin":[0],"Body":[1],"and":[2,17,67,73],"Box":[3],"(UTBB)":[4],"Fully-depleted":[5],"Silicon-on-Insulator":[6],"(FDSOI)":[7],"MOSFETs":[8],"exhibit":[9],"very":[10],"high":[11],"transit":[12],"frequency":[13],"granting":[14],"advantageous":[15],"RF":[16,44,74],"low-power":[18,72],"circuits":[19],"design.":[20,76],"This":[21],"requires":[22],"accurate":[23],"models":[24],"describing":[25],"transistor":[26],"behavior":[27],"in":[28],"all":[29],"operating":[30,56],"regimes":[31],"including":[32],"low":[33,59],"levels":[34],"of":[35,69],"MOSFET":[36],"channel":[37],"inversion.":[38],"In":[39],"this":[40],"paper,":[41],"Leti-UTSOI":[42,70],"based":[43],"model":[45],"will":[46],"be":[47],"compared":[48],"against":[49],"electrical":[50],"measurements":[51],"from":[52],"28nm":[53],"FDSOI":[54],"devices":[55],"down":[57],"to":[58],"bias":[60],"conditions.":[61],"The":[62],"outcome":[63],"demonstrates":[64],"the":[65],"accuracy":[66],"efficiency":[68],"for":[71],"applications":[75]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2026-03-10T16:38:18.471706","created_date":"2025-10-10T00:00:00"}