{"id":"https://openalex.org/W1964995182","doi":"https://doi.org/10.1109/mixdes.2014.6872220","title":"Fabrication and characterization of junctionless MOSFETs for sensor applications","display_name":"Fabrication and characterization of junctionless MOSFETs for sensor applications","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W1964995182","doi":"https://doi.org/10.1109/mixdes.2014.6872220","mag":"1964995182"},"language":"en","primary_location":{"id":"doi:10.1109/mixdes.2014.6872220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2014.6872220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108415229","display_name":"Micha\u0142 Zaborowski","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michal Zaborowski","raw_affiliation_strings":["Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","institution_ids":[]},{"raw_affiliation_string":"Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088307829","display_name":"Daniel Tomaszewski","orcid":"https://orcid.org/0000-0001-5158-2520"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Daniel Tomaszewski","raw_affiliation_strings":["Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","institution_ids":[]},{"raw_affiliation_string":"Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033859402","display_name":"Jolanta Malesi\u0144ska","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Jolanta Malesinska","raw_affiliation_strings":["Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","institution_ids":[]},{"raw_affiliation_string":"Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110450890","display_name":"P. Grabiec","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Piotr Grabiec","raw_affiliation_strings":["Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), Piaseczno, Poland","institution_ids":[]},{"raw_affiliation_string":"Div. of Silicon Microsyst. & Nanostruct. Technol., Inst. Technol. Elektron. (ITE), Piaseczno, Poland","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4079,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.4656443,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"116","issue":null,"first_page":"367","last_page":"371"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.8157771825790405},{"id":"https://openalex.org/keywords/characterization","display_name":"Characterization (materials science)","score":0.7254053354263306},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.6683135032653809},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6523209810256958},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6497700214385986},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6143447160720825},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5492501258850098},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5141261219978333},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.4772993326187134},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3978648781776428},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38313519954681396},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.351705402135849},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2618299722671509},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2190011441707611},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16354939341545105}],"concepts":[{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.8157771825790405},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.7254053354263306},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6683135032653809},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6523209810256958},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6497700214385986},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6143447160720825},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5492501258850098},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5141261219978333},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.4772993326187134},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3978648781776428},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38313519954681396},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.351705402135849},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2618299722671509},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2190011441707611},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16354939341545105},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mixdes.2014.6872220","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2014.6872220","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.47999998927116394,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W954852044","https://openalex.org/W1042179458","https://openalex.org/W1587386427","https://openalex.org/W1884977678","https://openalex.org/W1965774205","https://openalex.org/W2038170265","https://openalex.org/W2063109737","https://openalex.org/W2068636240","https://openalex.org/W2081975821","https://openalex.org/W2119378720","https://openalex.org/W2124817425","https://openalex.org/W2131557656","https://openalex.org/W2139917291","https://openalex.org/W6639276681"],"related_works":["https://openalex.org/W2001476809","https://openalex.org/W2095990703","https://openalex.org/W1921407827","https://openalex.org/W2146341803","https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007"],"abstract_inverted_index":{"A":[0],"method":[1],"for":[2,9],"fabrication":[3],"of":[4,19,43,63,71],"junctionless":[5,64],"SOI":[6],"MOS":[7],"devices":[8],"sensor":[10],"applications":[11],"is":[12,57,67],"presented":[13],"in":[14,32],"the":[15,38,44,72,75,79,84],"paper.":[16],"Two":[17],"groups":[18],"devices,":[20,23],"namely":[21],"FinFET-type":[22],"and":[24,30,66],"wide":[25],"MOSFETs":[26,45,65],"have":[27,50],"been":[28,51],"designed":[29],"manufactured":[31],"a":[33,60],"single":[34],"process":[35],"sequence":[36],"on":[37,59,69],"same":[39],"wafer.":[40],"Electrical":[41],"measurements":[42],"as":[46],"well":[47],"characterization":[48,55],"work":[49,56],"carried":[52],"out.":[53],"The":[54],"based":[58],"proposed":[61],"model":[62],"focused":[68],"analysis":[70],"symmetry":[73],"between":[74],"resistive":[76],"lines":[77],"connecting":[78],"transistor":[80],"active":[81],"area":[82],"with":[83],"pads.":[85]},"counts_by_year":[{"year":2014,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}