{"id":"https://openalex.org/W2033797756","doi":"https://doi.org/10.1109/mixdes.2014.6872154","title":"Capacitors in heterogeneous IC systems-Consequences on compact modeling","display_name":"Capacitors in heterogeneous IC systems-Consequences on compact modeling","publication_year":2014,"publication_date":"2014-06-01","ids":{"openalex":"https://openalex.org/W2033797756","doi":"https://doi.org/10.1109/mixdes.2014.6872154","mag":"2033797756"},"language":"en","primary_location":{"id":"doi:10.1109/mixdes.2014.6872154","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2014.6872154","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012503765","display_name":"Bernd Landgraf","orcid":null},"institutions":[{"id":"https://openalex.org/I4210131793","display_name":"Infineon Technologies (Austria)","ror":"https://ror.org/03msng824","country_code":"AT","type":"company","lineage":["https://openalex.org/I137594350","https://openalex.org/I4210131793"]}],"countries":["AT"],"is_corresponding":true,"raw_author_name":"Bernd Landgraf","raw_affiliation_strings":["IFAT DCV DES IP AMS DTI, Infineon Technologies Austria AG, Graz, Austria","IFAT DCV DES IP AMS DTI, Infineon Technol. Austria AG, Graz, Austria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IFAT DCV DES IP AMS DTI, Infineon Technologies Austria AG, Graz, Austria","institution_ids":["https://openalex.org/I4210131793"]},{"raw_affiliation_string":"IFAT DCV DES IP AMS DTI, Infineon Technol. Austria AG, Graz, Austria","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5012503765"],"corresponding_institution_ids":["https://openalex.org/I4210131793"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.12056314,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"8","issue":null,"first_page":"62","last_page":"65"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.9215359687805176},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6337764263153076},{"id":"https://openalex.org/keywords/filter-capacitor","display_name":"Filter capacitor","score":0.6102892756462097},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6101924180984497},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5961585640907288},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46836864948272705},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4521300494670868},{"id":"https://openalex.org/keywords/back-end-of-line","display_name":"Back end of line","score":0.42868274450302124},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.4248563051223755},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41236698627471924},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.32380199432373047},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.232506662607193},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09362778067588806},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.0801379382610321}],"concepts":[{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.9215359687805176},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6337764263153076},{"id":"https://openalex.org/C157808515","wikidata":"https://www.wikidata.org/wiki/Q4781508","display_name":"Filter capacitor","level":4,"score":0.6102892756462097},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6101924180984497},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5961585640907288},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46836864948272705},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4521300494670868},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.42868274450302124},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.4248563051223755},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41236698627471924},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32380199432373047},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.232506662607193},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09362778067588806},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0801379382610321},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mixdes.2014.6872154","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mixdes.2014.6872154","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.550000011920929,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2099314795","https://openalex.org/W2126180671","https://openalex.org/W2131947274","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2080773395","https://openalex.org/W2099626417","https://openalex.org/W2381289004","https://openalex.org/W2019514496","https://openalex.org/W2085450379","https://openalex.org/W2038802081","https://openalex.org/W2383965227","https://openalex.org/W2354552488","https://openalex.org/W2007755361","https://openalex.org/W2103120602"],"abstract_inverted_index":{"Different":[0],"types":[1],"of":[2,42,67,78,91,108],"capacitors":[3,22,99],"are":[4,101,119],"reviewed":[5],"with":[6,16],"respect":[7],"to":[8,37,124],"charge":[9],"storing":[10],"in":[11,23,113],"heterogeneous":[12],"integrated":[13,79,112],"systems.":[14],"Starting":[15],"the":[17,43,47,65,68,75,89,93,104],"commonly":[18],"used":[19],"gate":[20,44,48,58],"oxide":[21],"CMOS":[24,117],"technologies,":[25],"we":[26],"discuss":[27],"challenges":[28],"for":[29,50,74],"thinner":[30],"oxides.":[31],"A":[32],"PSP":[33],"model":[34],"is":[35,61,129],"shown":[36],"provide":[38],"a":[39,57,109,114,125],"good":[40],"fit":[41],"capacitance":[45],"vs.":[46],"voltage":[49],"retrograde":[51],"doping":[52],"profiles.":[53],"As":[54],"an":[55,122],"example,":[56],"capacitor":[59,128],"circuitry":[60],"discussed":[62],"which":[63],"overcomes":[64],"drawback":[66],"strong":[69],"non-linear":[70],"bias":[71],"dependence.":[72],"Requirements":[73],"RF":[76,110],"modeling":[77,92,106],"back-end-of-line":[80],"(BEOL)":[81],"capacitors,":[82,87],"such":[83],"as":[84],"metal-insulator-metal":[85],"(MIM)":[86],"highlighting":[88],"need":[90],"dielectric":[94],"absorption,":[95],"or":[96],"vertical":[97],"natural":[98],"(VNCAP),":[100],"addressed.":[102],"Furthermore,":[103],"compact":[105],"properties":[107],"MEMS":[111],"0.18":[115],"\u03bcm":[116],"process":[118],"shown.":[120],"Finally,":[121],"outlook":[123],"through-silicon-via":[126],"(TSV)":[127],"given.":[130]},"counts_by_year":[{"year":2018,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}