{"id":"https://openalex.org/W4414221791","doi":"https://doi.org/10.1109/lssc.2025.3608282","title":"Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions","display_name":"Design and Verification of Low Parasitic MOS Capacitors With Series Connected Tri-Well Junctions","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4414221791","doi":"https://doi.org/10.1109/lssc.2025.3608282"},"language":"en","primary_location":{"id":"doi:10.1109/lssc.2025.3608282","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lssc.2025.3608282","pdf_url":null,"source":{"id":"https://openalex.org/S4210192596","display_name":"IEEE Solid-State Circuits Letters","issn_l":"2573-9603","issn":["2573-9603"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Solid-State Circuits Letters","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101561564","display_name":"Zhendong Li","orcid":"https://orcid.org/0000-0002-2928-193X"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zhendong Li","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111416526","display_name":"Yongjuan Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yongjuan Shi","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101822212","display_name":"Yifan Jiang","orcid":"https://orcid.org/0009-0002-7406-5950"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yifan Jiang","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":"https://orcid.org/0009-0002-7406-5950","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102012256","display_name":"Chen Hu","orcid":"https://orcid.org/0000-0002-7637-7387"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chen Hu","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-7637-7387","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059006389","display_name":"Junting Chen","orcid":"https://orcid.org/0000-0003-2505-2758"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junting Chen","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0003-2505-2758","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009165211","display_name":"Mengyuan Hua","orcid":"https://orcid.org/0000-0003-3016-1588"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mengyuan Hua","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0003-3016-1588","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101730423","display_name":"Xun Liu","orcid":"https://orcid.org/0000-0002-6115-8886"},"institutions":[{"id":"https://openalex.org/I4210116924","display_name":"Chinese University of Hong Kong, Shenzhen","ror":"https://ror.org/02d5ks197","country_code":"CN","type":"education","lineage":["https://openalex.org/I177725633","https://openalex.org/I180726961","https://openalex.org/I4210116924"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xun Liu","raw_affiliation_strings":["School of Science and Engineering and Future Network of Intelligence Institute, The Chinese University of Hong Kong, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-6115-8886","affiliations":[{"raw_affiliation_string":"School of Science and Engineering and Future Network of Intelligence Institute, The Chinese University of Hong Kong, Shenzhen, China","institution_ids":["https://openalex.org/I4210116924"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074569526","display_name":"Junmin Jiang","orcid":"https://orcid.org/0000-0001-6529-0422"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junmin Jiang","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0001-6529-0422","affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5101561564"],"corresponding_institution_ids":["https://openalex.org/I3045169105"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.2281596,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8","issue":null,"first_page":"277","last_page":"280"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9796000123023987,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.8454999923706055},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.7738000154495239},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7023000121116638},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6848000288009644},{"id":"https://openalex.org/keywords/filter-capacitor","display_name":"Filter capacitor","score":0.6157000064849854},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.5049999952316284},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.5008999705314636},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.41929998993873596}],"concepts":[{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.8454999923706055},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.7738000154495239},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7023000121116638},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6848000288009644},{"id":"https://openalex.org/C157808515","wikidata":"https://www.wikidata.org/wiki/Q4781508","display_name":"Filter capacitor","level":4,"score":0.6157000064849854},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5411999821662903},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.5049999952316284},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.5008999705314636},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4702000021934509},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46140000224113464},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45080000162124634},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.41929998993873596},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4101000130176544},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.39890000224113464},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39480000734329224},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.33160001039505005},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.32760000228881836},{"id":"https://openalex.org/C143724316","wikidata":"https://www.wikidata.org/wiki/Q312468","display_name":"Series (stratigraphy)","level":2,"score":0.29249998927116394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2858000099658966},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2858000099658966},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.274399995803833},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.26660001277923584}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/lssc.2025.3608282","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lssc.2025.3608282","pdf_url":null,"source":{"id":"https://openalex.org/S4210192596","display_name":"IEEE Solid-State Circuits Letters","issn_l":"2573-9603","issn":["2573-9603"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Solid-State Circuits Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2301079833","display_name":null,"funder_award_id":"JCYJ20220530113009022","funder_id":"https://openalex.org/F4320329791","funder_display_name":"Shenzhen Fundamental Research Program"},{"id":"https://openalex.org/G2642192162","display_name":null,"funder_award_id":"JCYJ20240813100601003","funder_id":"https://openalex.org/F4320329791","funder_display_name":"Shenzhen Fundamental Research Program"},{"id":"https://openalex.org/G3224119933","display_name":null,"funder_award_id":"62474153","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7833538736","display_name":null,"funder_award_id":"JCYJ20220818100609021","funder_id":"https://openalex.org/F4320329791","funder_display_name":"Shenzhen Fundamental Research Program"},{"id":"https://openalex.org/G7920328032","display_name":null,"funder_award_id":"2025A1515011313","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G8048162718","display_name":null,"funder_award_id":"2025A1515010698","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320329791","display_name":"Shenzhen Fundamental Research Program","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2022999871","https://openalex.org/W2033882929","https://openalex.org/W2079442988","https://openalex.org/W2158552598","https://openalex.org/W2288534889","https://openalex.org/W2748346921","https://openalex.org/W2966665427","https://openalex.org/W3135920459","https://openalex.org/W4400070994"],"related_works":[],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,54,67,125],"tri-well":[4,117],"implementation":[5],"of":[6,14,98],"MOS":[7,113],"capacitors":[8,26,114],"designed":[9],"to":[10,58,100,106,132],"tackle":[11],"the":[12,21,28,40,87,96,127,133],"challenge":[13],"high":[15],"parasitic":[16,23,41,61,76,99],"capacitance.":[17,62],"By":[18],"serially":[19],"connecting":[20],"three":[22,29],"well":[24],"junction":[25],"between":[27],"wells":[30],"(N-Well,":[31],"deep":[32,35],"P-Well,":[33],"and":[34,37,69],"N-Well)":[36],"substrate":[38],"(PSUB),":[39],"capacitance":[42,77,102],"can":[43,103],"be":[44,104],"significantly":[45],"decreased.":[46],"A":[47],"higher":[48],"bias":[49],"voltage":[50],"is":[51],"applied":[52],"using":[53,78,86],"sufficiently":[55],"large":[56],"resistor":[57],"further":[59],"reduce":[60],"Furthermore,":[63],"we":[64],"also":[65],"present":[66],"simple":[68],"effective":[70,120],"method":[71],"for":[72,111],"testing":[73],"very":[74],"small":[75],"off-chip":[79],"inverters.":[80],"The":[81,91],"test":[82],"chip":[83,128],"was":[84],"fabricated":[85],"180nm":[88],"BCD":[89],"process.":[90],"measurement":[92],"results":[93],"indicate":[94],"that":[95],"ratio":[97],"flying":[101],"reduced":[105],"as":[107,109],"low":[108],"0.67%":[110],"1.8V":[112],"through":[115],"series-connected":[116],"junctions":[118],"with":[119],"biasing":[121],"while":[122],"only":[123],"increasing":[124],"7.7%":[126],"area":[129],"overhead":[130],"compared":[131],"dual-well":[134],"junctions.":[135]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}