{"id":"https://openalex.org/W4251318151","doi":"https://doi.org/10.1109/lpe.1996.547496","title":"Floating body effects in partially-depleted SOI CMOS circuits","display_name":"Floating body effects in partially-depleted SOI CMOS circuits","publication_year":2002,"publication_date":"2002-12-23","ids":{"openalex":"https://openalex.org/W4251318151","doi":"https://doi.org/10.1109/lpe.1996.547496"},"language":"en","primary_location":{"id":"doi:10.1109/lpe.1996.547496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lpe.1996.547496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 1996 International Symposium on Low Power Electronics and Design","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044747691","display_name":"P.-F. Lu","orcid":"https://orcid.org/0009-0003-1900-0449"},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"P.F. Lu","raw_affiliation_strings":["Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA"],"affiliations":[{"raw_affiliation_string":"Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072821916","display_name":"J. Ji","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Ji","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112180178","display_name":"C.T. Chuang","orcid":"https://orcid.org/0000-0001-8795-2394"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C.T. Chuang","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027581755","display_name":"L. Wagner","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"L.F. Wagner","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056903804","display_name":"C.M. Hsieh","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C.M. Hsieh","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013787120","display_name":"J.B. Kuang","orcid":"https://orcid.org/0000-0003-2190-321X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J.B. Kuang","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112443181","display_name":"L. Hsu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"L. Hsu","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110451388","display_name":"M.M. Pelella","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M.M. Pelella","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5007695606","display_name":"S. Chu","orcid":"https://orcid.org/0009-0007-8927-396X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Chu","raw_affiliation_strings":[],"affiliations":[]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5044747691"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":2.0366,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.87900701,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"139","last_page":"144"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/multiplexer","display_name":"Multiplexer","score":0.6908752918243408},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6492974162101746},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5890417098999023},{"id":"https://openalex.org/keywords/digital-electronics","display_name":"Digital electronics","score":0.5790643095970154},{"id":"https://openalex.org/keywords/integrated-injection-logic","display_name":"Integrated injection logic","score":0.5682209134101868},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.5412856936454773},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5253388285636902},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.48181238770484924},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46211957931518555},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.46053245663642883},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.44994276762008667},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.44481369853019714},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.438632071018219},{"id":"https://openalex.org/keywords/pass-transistor-logic","display_name":"Pass transistor logic","score":0.3097134530544281},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2558050751686096},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23773112893104553},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23493093252182007},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.22334662079811096},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.18356060981750488},{"id":"https://openalex.org/keywords/multiplexing","display_name":"Multiplexing","score":0.15285754203796387},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.06583946943283081}],"concepts":[{"id":"https://openalex.org/C70970002","wikidata":"https://www.wikidata.org/wiki/Q189434","display_name":"Multiplexer","level":3,"score":0.6908752918243408},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6492974162101746},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5890417098999023},{"id":"https://openalex.org/C81843906","wikidata":"https://www.wikidata.org/wiki/Q173156","display_name":"Digital electronics","level":3,"score":0.5790643095970154},{"id":"https://openalex.org/C159903706","wikidata":"https://www.wikidata.org/wiki/Q173574","display_name":"Integrated injection logic","level":5,"score":0.5682209134101868},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.5412856936454773},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5253388285636902},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.48181238770484924},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46211957931518555},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46053245663642883},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.44994276762008667},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.44481369853019714},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.438632071018219},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.3097134530544281},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2558050751686096},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23773112893104553},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23493093252182007},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.22334662079811096},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18356060981750488},{"id":"https://openalex.org/C19275194","wikidata":"https://www.wikidata.org/wiki/Q222903","display_name":"Multiplexing","level":2,"score":0.15285754203796387},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.06583946943283081},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/lpe.1996.547496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lpe.1996.547496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of 1996 International Symposium on Low Power Electronics and Design","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4300000071525574,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2033697496","https://openalex.org/W2135955108","https://openalex.org/W2138501834"],"related_works":["https://openalex.org/W3212436960","https://openalex.org/W2765435638","https://openalex.org/W2134806353","https://openalex.org/W6024065","https://openalex.org/W2114346412","https://openalex.org/W2178512053","https://openalex.org/W2350960814","https://openalex.org/W2791210919","https://openalex.org/W2743919194","https://openalex.org/W1964142402"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"detailed":[4],"study":[5],"on":[6,17],"the":[7,30,37,52],"impact":[8],"of":[9],"floating":[10,31],"body":[11,32],"in":[12,43],"partially-depleted":[13],"(PD)":[14],"SOI":[15],"MOSFET":[16],"various":[18],"digital":[19],"VLSI":[20],"CMOS":[21],"circuit":[22,38],"families.":[23],"The":[24],"parasitic":[25,53],"bipolar":[26,54],"effect":[27,55],"resulting":[28],"from":[29],"is":[33,56],"shown":[34,57],"to":[35,58],"degrade":[36],"noise":[39],"margin":[40],"and":[41,49],"stability":[42],"general.":[44],"In":[45],"certain":[46],"dynamic":[47],"circuits":[48],"wide":[50],"multiplexers,":[51],"cause":[59],"logic":[60],"state":[61],"error":[62],"if":[63],"not":[64],"properly":[65],"accounted":[66],"for.":[67]},"counts_by_year":[{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}