{"id":"https://openalex.org/W2415196670","doi":"https://doi.org/10.1109/latw.2016.7483344","title":"A methodology for NBTI circuit reliability at reduced power consumption using dual supply voltage","display_name":"A methodology for NBTI circuit reliability at reduced power consumption using dual supply voltage","publication_year":2016,"publication_date":"2016-04-01","ids":{"openalex":"https://openalex.org/W2415196670","doi":"https://doi.org/10.1109/latw.2016.7483344","mag":"2415196670"},"language":"en","primary_location":{"id":"doi:10.1109/latw.2016.7483344","is_oa":false,"landing_page_url":"https://doi.org/10.1109/latw.2016.7483344","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th Latin-American Test Symposium (LATS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5035827251","display_name":"Freddy Forero","orcid":"https://orcid.org/0000-0001-9939-0974"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Freddy Forero","raw_affiliation_strings":["Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112241911","display_name":"Andres Gomez","orcid":null},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Andres Gomez","raw_affiliation_strings":["Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038219219","display_name":"Victor Champac","orcid":"https://orcid.org/0000-0002-4440-3800"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Victor Champac","raw_affiliation_strings":["Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, Optics and Electronics - INAOE, Mexico","institution_ids":["https://openalex.org/I39824353"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.186,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.56728328,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"24","issue":null,"first_page":"81","last_page":"86"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.8524332046508789},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6376237273216248},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5752226710319519},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5288136005401611},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.49962592124938965},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.46278032660484314},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.44961613416671753},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.4393536150455475},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41839081048965454},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4019101560115814},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3888113498687744},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.355305552482605},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25423985719680786},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.20132622122764587}],"concepts":[{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.8524332046508789},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6376237273216248},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5752226710319519},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5288136005401611},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.49962592124938965},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.46278032660484314},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.44961613416671753},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.4393536150455475},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41839081048965454},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4019101560115814},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3888113498687744},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.355305552482605},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25423985719680786},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20132622122764587},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/latw.2016.7483344","is_oa":false,"landing_page_url":"https://doi.org/10.1109/latw.2016.7483344","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 17th Latin-American Test Symposium (LATS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321739","display_name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","ror":"https://ror.org/059ex5q34"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W108989492","https://openalex.org/W1496356251","https://openalex.org/W1706003341","https://openalex.org/W1782430720","https://openalex.org/W1999919743","https://openalex.org/W2096554329","https://openalex.org/W2099250769","https://openalex.org/W2101686625","https://openalex.org/W2140103399","https://openalex.org/W2144702307","https://openalex.org/W2165130438","https://openalex.org/W2170333286","https://openalex.org/W2407062564","https://openalex.org/W4238041806","https://openalex.org/W4249510403","https://openalex.org/W6675202185"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2905252662","https://openalex.org/W2088008649","https://openalex.org/W2036808971","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W1968460025","https://openalex.org/W2571059022","https://openalex.org/W2083433971"],"abstract_inverted_index":{"Actually":[0],"there":[1],"is":[2,29,75,94],"a":[3,44,106],"great":[4],"interest":[5],"of":[6,14,100,105],"new":[7],"methodologies":[8],"for":[9,59],"reducing":[10],"the":[11,20,64,68,71,79,98,102],"power":[12,65,110,123,138],"consumption":[13,18,111,124,139],"integrated":[15],"circuits.":[16],"Power":[17],"raises":[19],"operating":[21],"temperature":[22],"that":[23,118],"devices":[24],"experience.":[25],"Consequently,":[26],"circuit":[27,109],"reliability":[28],"affected":[30],"due":[31,56],"to":[32,52,57,62,96,134],"temperature-dependent":[33],"mechanisms":[34],"like":[35],"Negative":[36],"Bias":[37],"Temperature":[38],"Instability":[39],"(NBTI).":[40],"This":[41,132],"paper":[42],"proposes":[43],"methodology":[45],"based":[46],"on":[47,108],"dual":[48],"supply":[49,74,103],"voltage":[50,73,82,85,104],"technique":[51],"mitigate":[53],"delay":[54,113,120,130],"degradation":[55,121],"NBTI":[58],"applications":[60],"requiring":[61],"reduce":[63],"consumption.":[66],"In":[67],"proposed":[69,95],"methodology,":[70],"low":[72],"slightly":[76],"lower":[77,137],"than":[78],"high":[80],"(nominal)":[81],"supply.":[83],"Therefore,":[84],"level":[86],"converters":[87],"are":[88,125],"not":[89],"required.":[90],"A":[91],"gate":[92,107],"metric":[93],"estimate":[97],"benefit":[99],"lowering":[101],"and":[112,122,140],"degradation.":[114],"The":[115],"results":[116],"show":[117],"NBTI-induced":[119],"reduced":[126],"at":[127],"some":[128],"small":[129],"penalty.":[131],"leads":[133],"circuits":[135],"with":[136],"higher":[141],"reliability.":[142]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}