{"id":"https://openalex.org/W1782430720","doi":"https://doi.org/10.1109/latw.2015.7102496","title":"Effective selection of favorable gates in BTI-critical paths to enhance circuit reliability","display_name":"Effective selection of favorable gates in BTI-critical paths to enhance circuit reliability","publication_year":2015,"publication_date":"2015-03-01","ids":{"openalex":"https://openalex.org/W1782430720","doi":"https://doi.org/10.1109/latw.2015.7102496","mag":"1782430720"},"language":"en","primary_location":{"id":"doi:10.1109/latw.2015.7102496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/latw.2015.7102496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 16th Latin-American Test Symposium (LATS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112241911","display_name":"Andres Gomez","orcid":null},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"Andres Gomez","raw_affiliation_strings":["Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","institution_ids":["https://openalex.org/I39824353"]},{"raw_affiliation_string":"National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038219219","display_name":"Victor Champac","orcid":"https://orcid.org/0000-0002-4440-3800"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Victor Champac","raw_affiliation_strings":["Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico"],"affiliations":[{"raw_affiliation_string":"Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","institution_ids":["https://openalex.org/I39824353"]},{"raw_affiliation_string":"National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico","institution_ids":["https://openalex.org/I39824353"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5112241911"],"corresponding_institution_ids":["https://openalex.org/I39824353"],"apc_list":null,"apc_paid":null,"fwci":0.7891,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.75436945,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/metric","display_name":"Metric (unit)","score":0.7310295104980469},{"id":"https://openalex.org/keywords/benchmark","display_name":"Benchmark (surveying)","score":0.6501994132995605},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5954172015190125},{"id":"https://openalex.org/keywords/circuit-reliability","display_name":"Circuit reliability","score":0.5606729388237},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5581279993057251},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.5437208414077759},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5406349301338196},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5013248920440674},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.49129170179367065},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.46971529722213745},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.46193328499794006},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.45931628346443176},{"id":"https://openalex.org/keywords/sizing","display_name":"Sizing","score":0.4439907371997833},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3596586287021637},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.33863565325737},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3101385235786438},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.2291918396949768},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.17736446857452393},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08236527442932129},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.0691901445388794}],"concepts":[{"id":"https://openalex.org/C176217482","wikidata":"https://www.wikidata.org/wiki/Q860554","display_name":"Metric (unit)","level":2,"score":0.7310295104980469},{"id":"https://openalex.org/C185798385","wikidata":"https://www.wikidata.org/wiki/Q1161707","display_name":"Benchmark (surveying)","level":2,"score":0.6501994132995605},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5954172015190125},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.5606729388237},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5581279993057251},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.5437208414077759},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5406349301338196},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5013248920440674},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49129170179367065},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.46971529722213745},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.46193328499794006},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.45931628346443176},{"id":"https://openalex.org/C2777767291","wikidata":"https://www.wikidata.org/wiki/Q1080291","display_name":"Sizing","level":2,"score":0.4439907371997833},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3596586287021637},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.33863565325737},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3101385235786438},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2291918396949768},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17736446857452393},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08236527442932129},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0691901445388794},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C205649164","wikidata":"https://www.wikidata.org/wiki/Q1071","display_name":"Geography","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C13280743","wikidata":"https://www.wikidata.org/wiki/Q131089","display_name":"Geodesy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/latw.2015.7102496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/latw.2015.7102496","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 16th Latin-American Test Symposium (LATS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1600691640","https://openalex.org/W1970845025","https://openalex.org/W1998401102","https://openalex.org/W2101686625","https://openalex.org/W2120893974","https://openalex.org/W2135748666","https://openalex.org/W2140103399","https://openalex.org/W2158245653","https://openalex.org/W2165130438","https://openalex.org/W2170333286","https://openalex.org/W2407062564","https://openalex.org/W4254991892","https://openalex.org/W6642899326"],"related_works":["https://openalex.org/W1970920853","https://openalex.org/W2099679924","https://openalex.org/W2738622559","https://openalex.org/W1977755957","https://openalex.org/W2115165828","https://openalex.org/W1982822282","https://openalex.org/W2076372184","https://openalex.org/W2142908374","https://openalex.org/W2126834173","https://openalex.org/W1602382472"],"abstract_inverted_index":{"Bias":[0],"Temperature":[1],"Instability":[2],"(BTI)":[3],"has":[4,115],"become":[5],"a":[6,30,75],"major":[7],"issue":[8],"for":[9],"circuit":[10,20,51],"reliability":[11,143],"in":[12,118],"deeply":[13],"scaled":[14],"CMOS":[15],"technologies.":[16],"Due":[17],"to":[18,29,40,46,49,58,63,69,84,107,139],"BTI,":[19],"delay":[21,82,97,100],"increases":[22],"as":[23],"time":[24],"progress,":[25],"which":[26,88],"may":[27],"lead":[28],"timing":[31],"constraint":[32],"violation.":[33],"This":[34],"paper":[35],"proposes":[36],"an":[37,125],"efficient":[38],"metric":[39,73,110,114],"select":[41],"the":[42,59,65,90,94,109],"most":[43,66],"favorable":[44,67],"gates":[45,68],"be":[47,70],"resized":[48],"enhance":[50],"reliability.":[52],"A":[53],"close":[54],"analysis":[55],"is":[56,137],"devoted":[57],"main":[60],"aspects":[61],"allowing":[62],"identify":[64],"resized.":[71],"The":[72,112,131],"introduces":[74],"composited":[76],"point":[77],"of":[78,80],"view":[79],"gate":[81,96,99],"sensitivity":[83],"channel":[85],"width":[86],"sizing,":[87],"reflects":[89],"sizing":[91],"impact":[92],"on":[93],"initial":[95],"and":[98,128],"degradation.":[101],"Other":[102],"parameters":[103],"are":[104],"also":[105],"considered":[106],"improve":[108],"effectiveness.":[111],"proposed":[113],"been":[116],"applied":[117],"some":[119],"ISCAS85":[120],"benchmark":[121],"circuits":[122],"along":[123],"with":[124,144],"iterative":[126],"gate-selection":[127],"gate-sizing":[129],"procedure.":[130],"results":[132],"show":[133],"that":[134],"our":[135],"proposal":[136],"suitable":[138],"achieve":[140],"higher":[141],"product":[142],"minimum":[145],"area":[146],"overhead.":[147]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}