{"id":"https://openalex.org/W2703231331","doi":"https://doi.org/10.1109/lascas.2017.7948059","title":"A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS","display_name":"A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS","publication_year":2017,"publication_date":"2017-02-01","ids":{"openalex":"https://openalex.org/W2703231331","doi":"https://doi.org/10.1109/lascas.2017.7948059","mag":"2703231331"},"language":"en","primary_location":{"id":"doi:10.1109/lascas.2017.7948059","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lascas.2017.7948059","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 8th Latin American Symposium on Circuits &amp; Systems (LASCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034987189","display_name":"Boris Moret","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Boris Moret","raw_affiliation_strings":["STMicroelectronics, Technology and Design Platform, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Technology and Design Platform, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046818962","display_name":"V. Knopik","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Vincent Knopik","raw_affiliation_strings":["STMicroelectronics, Technology and Design Platform, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Technology and Design Platform, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108167299","display_name":"\u00c9ric Kerherv\u00e9","orcid":"https://orcid.org/0000-0001-6369-7544"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I15057530","display_name":"Universit\u00e9 de Bordeaux","ror":"https://ror.org/057qpr032","country_code":"FR","type":"education","lineage":["https://openalex.org/I15057530"]},{"id":"https://openalex.org/I4210157089","display_name":"Laboratoire de l'Int\u00e9gration du Mat\u00e9riau au Syst\u00e8me","ror":"https://ror.org/04nabhy78","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210091158","https://openalex.org/I4210095849","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]},{"id":"https://openalex.org/I4210160189","display_name":"Institut Polytechnique de Bordeaux","ror":"https://ror.org/054qv7y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I4210160189"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Eric Kerherve","raw_affiliation_strings":["University of Bordeaux, CNRS UMR 5218, Talence, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Bordeaux, CNRS UMR 5218, Talence, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I15057530","https://openalex.org/I4210157089","https://openalex.org/I4210160189"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.2048,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.98422034,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9944999814033508,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8049198985099792},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7126870155334473},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6048466563224792},{"id":"https://openalex.org/keywords/quadrature","display_name":"Quadrature (astronomy)","score":0.5554479360580444},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.555200457572937},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5511181950569153},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5128093361854553},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4340442419052124},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4057018756866455},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32516616582870483},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31720292568206787},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.23791900277137756},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.10623368620872498}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8049198985099792},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7126870155334473},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6048466563224792},{"id":"https://openalex.org/C62869609","wikidata":"https://www.wikidata.org/wiki/Q28137","display_name":"Quadrature (astronomy)","level":2,"score":0.5554479360580444},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.555200457572937},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5511181950569153},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5128093361854553},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4340442419052124},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4057018756866455},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32516616582870483},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31720292568206787},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.23791900277137756},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.10623368620872498},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/lascas.2017.7948059","is_oa":false,"landing_page_url":"https://doi.org/10.1109/lascas.2017.7948059","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 8th Latin American Symposium on Circuits &amp; Systems (LASCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8799999952316284,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1502117330","https://openalex.org/W1559093070","https://openalex.org/W1967942986","https://openalex.org/W1991107316","https://openalex.org/W2017428964","https://openalex.org/W2018130513","https://openalex.org/W2027078727","https://openalex.org/W2029570258","https://openalex.org/W2291984582","https://openalex.org/W2786000313","https://openalex.org/W6633513416"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W2810180604","https://openalex.org/W2325281603","https://openalex.org/W2944964251","https://openalex.org/W2012754971","https://openalex.org/W44660823","https://openalex.org/W2034653092","https://openalex.org/W2101030291"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,31,39],"28":[4],"GHz":[5],"CMOS":[6,86],"balanced":[7,28],"Power":[8,41],"Amplifier":[9],"(PA)":[10],"with":[11,47],"integrated":[12],"quadrature":[13],"hybrid":[14],"couplers":[15],"to":[16,70],"achieve":[17],"robust":[18],"load":[19],"insensitivity":[20],"for":[21,94],"5G":[22],"phased":[23],"array":[24],"applications.":[25],"The":[26,78],"proposed":[27],"PA":[29],"achieves":[30],"saturated":[32],"output":[33],"power":[34,59],"(Psat)":[35],"of":[36,45,90],"18.7dBm":[37],"and":[38,53,75],"maximum":[40],"Added":[42],"Efficiency":[43],"(PAEmax)":[44],"12.4%":[46],"17.5dB":[48],"gain.":[49],"It":[50],"consumes":[51],"154mW":[52],"occupies":[54],"0.66mm2of":[55],"die":[56],"area.":[57],"Each":[58],"cell":[60],"is":[61,80],"based":[62],"on":[63],"class-AB":[64],"Segmented":[65],"Biased":[66],"Push-Pull":[67],"(SBPP)":[68],"topology":[69],"improve":[71],"both":[72],"the":[73,91],"AM-AM":[74],"AM-PM":[76],"conversion.":[77],"circuit":[79],"implemented":[81],"in":[82],"28nm":[83],"UTBB":[84],"FD-SOI":[85],"technology":[87],"taking,":[88],"advantage":[89],"back":[92],"gate":[93],"threshold":[95],"voltage":[96],"adjustment.":[97]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}
