{"id":"https://openalex.org/W4406892611","doi":"https://doi.org/10.1109/jssc.2025.3530472","title":"A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface","display_name":"A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface","publication_year":2025,"publication_date":"2025-01-28","ids":{"openalex":"https://openalex.org/W4406892611","doi":"https://doi.org/10.1109/jssc.2025.3530472"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2025.3530472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2025.3530472","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010679518","display_name":"Jing Wang","orcid":"https://orcid.org/0009-0005-1064-1906"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jing Wang","raw_affiliation_strings":["School of Microelectronics, University of Science and Technology of China, Hefei, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, University of Science and Technology of China, Hefei, China","institution_ids":["https://openalex.org/I126520041"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057224403","display_name":"Jun He","orcid":"https://orcid.org/0000-0003-1719-9661"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun He","raw_affiliation_strings":["School of Microelectronics, University of Science and Technology of China, Hefei, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, University of Science and Technology of China, Hefei, China","institution_ids":["https://openalex.org/I126520041"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029369208","display_name":"Man\u2010Kay Law","orcid":"https://orcid.org/0000-0002-2799-1129"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I204512498","display_name":"University of Macau","ror":"https://ror.org/01r4q9n85","country_code":"MO","type":"education","lineage":["https://openalex.org/I204512498"]}],"countries":["CN","MO"],"is_corresponding":false,"raw_author_name":"Man-Kay Law","raw_affiliation_strings":["Institute of Microelectronics, University of Macau, Macau, China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, University of Macau, Macau, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I204512498"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019766466","display_name":"Xinzhe Wang","orcid":"https://orcid.org/0000-0002-0361-7765"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinzhe Wang","raw_affiliation_strings":["School of Microelectronics, University of Science and Technology of China, Hefei, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, University of Science and Technology of China, Hefei, China","institution_ids":["https://openalex.org/I126520041"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004824182","display_name":"Futian Liang","orcid":"https://orcid.org/0000-0001-9843-0559"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Futian Liang","raw_affiliation_strings":["School of Microelectronics, University of Science and Technology of China, Hefei, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, University of Science and Technology of China, Hefei, China","institution_ids":["https://openalex.org/I126520041"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075157873","display_name":"Lin Cheng","orcid":"https://orcid.org/0000-0002-3285-0187"},"institutions":[{"id":"https://openalex.org/I126520041","display_name":"University of Science and Technology of China","ror":"https://ror.org/04c4dkn09","country_code":"CN","type":"education","lineage":["https://openalex.org/I126520041","https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lin Cheng","raw_affiliation_strings":["School of Microelectronics, University of Science and Technology of China, Hefei, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, University of Science and Technology of China, Hefei, China","institution_ids":["https://openalex.org/I126520041"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5010679518"],"corresponding_institution_ids":["https://openalex.org/I126520041"],"apc_list":null,"apc_paid":null,"fwci":3.7141,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.92258479,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":98},"biblio":{"volume":"60","issue":"9","first_page":"3242","last_page":"3256"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.9940000176429749,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/watt","display_name":"Watt","score":0.8243759274482727},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6422863602638245},{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.6229300498962402},{"id":"https://openalex.org/keywords/nano","display_name":"Nano-","score":0.6004963517189026},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5798553824424744},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5120478272438049},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4739668071269989},{"id":"https://openalex.org/keywords/quantum","display_name":"Quantum","score":0.4665011763572693},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4538208544254303},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35264843702316284},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3392215371131897},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2335108518600464},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.1376602053642273},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.0644141137599945},{"id":"https://openalex.org/keywords/molecule","display_name":"Molecule","score":0.052571654319763184}],"concepts":[{"id":"https://openalex.org/C44012409","wikidata":"https://www.wikidata.org/wiki/Q25236","display_name":"Watt","level":3,"score":0.8243759274482727},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6422863602638245},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.6229300498962402},{"id":"https://openalex.org/C2780357685","wikidata":"https://www.wikidata.org/wiki/Q154357","display_name":"Nano-","level":2,"score":0.6004963517189026},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5798553824424744},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5120478272438049},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4739668071269989},{"id":"https://openalex.org/C84114770","wikidata":"https://www.wikidata.org/wiki/Q46344","display_name":"Quantum","level":2,"score":0.4665011763572693},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4538208544254303},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35264843702316284},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3392215371131897},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2335108518600464},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.1376602053642273},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0644141137599945},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.052571654319763184},{"id":"https://openalex.org/C55352822","wikidata":"https://www.wikidata.org/wiki/Q5558978","display_name":"Gibbs isotherm","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2025.3530472","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2025.3530472","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7900000214576721}],"awards":[{"id":"https://openalex.org/G2910762295","display_name":null,"funder_award_id":"62204235","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W2004889297","https://openalex.org/W2048009618","https://openalex.org/W2104488319","https://openalex.org/W2109206407","https://openalex.org/W2148392146","https://openalex.org/W2166428371","https://openalex.org/W2171702041","https://openalex.org/W2573468306","https://openalex.org/W2585884280","https://openalex.org/W2591606412","https://openalex.org/W2735120665","https://openalex.org/W2735428188","https://openalex.org/W2744966117","https://openalex.org/W2755984005","https://openalex.org/W2761830393","https://openalex.org/W2794338547","https://openalex.org/W2795812195","https://openalex.org/W2886157646","https://openalex.org/W2896020231","https://openalex.org/W2896469455","https://openalex.org/W2900545235","https://openalex.org/W2903421386","https://openalex.org/W2944938383","https://openalex.org/W2978954010","https://openalex.org/W2979996741","https://openalex.org/W2986456514","https://openalex.org/W3015294009","https://openalex.org/W3019032708","https://openalex.org/W3044247275","https://openalex.org/W3048488696","https://openalex.org/W3081698615","https://openalex.org/W3124658597","https://openalex.org/W3134124940","https://openalex.org/W4229439446","https://openalex.org/W4295790497","https://openalex.org/W4312550922","https://openalex.org/W4393906143"],"related_works":["https://openalex.org/W2907336738","https://openalex.org/W4240959870","https://openalex.org/W2062374963","https://openalex.org/W2498907530","https://openalex.org/W2511748399","https://openalex.org/W1986359287","https://openalex.org/W1968402407","https://openalex.org/W2584286162","https://openalex.org/W1505544779","https://openalex.org/W4240108171"],"abstract_inverted_index":{"This":[0],"work":[1],"proposes":[2],"a":[3,78,104,122],"temperature":[4,25,64,97,163],"and":[5,50,63,120,152],"process-compensated":[6],"low-power":[7],"Cryo-CMOS":[8],"voltage":[9,58,123,162,167],"reference":[10,59,168],"without":[11],"trimming":[12],"for":[13,33],"quantum":[14,181],"integrated":[15,178],"interface,":[16],"which":[17],"is":[18],"capable":[19],"of":[20,43,100,125,139],"operating":[21,69,118],"continuously":[22],"from":[23,71,85],"room":[24],"(RT)":[26],"down":[27],"to":[28,73],"cryogenic":[29],"temperatures.":[30],"By":[31],"compensating":[32],"the":[34,40,44,54,116],"main":[35],"accuracy":[36],"limiting":[37],"factors":[38],"including":[39],"process":[41,62,161],"dependence":[42],"transistor":[45],"threshold":[46],"voltage,":[47],"device":[48,51],"mismatch":[49],"nonlinearity":[52],"deterioration,":[53],"proposed":[55,109,160],"fully":[56],"CMOS":[57,171],"achieves":[60],"simultaneous":[61],"compensation":[65],"over":[66,115],"an":[67,95,129],"ultra-wide":[68],"range":[70,119],"300":[72,150],"4":[74,156],"K.":[75],"Fabricated":[76],"in":[77,169],"standard":[79,170],"180":[80],"nm":[81],"process,":[82],"measurement":[83],"results":[84],"80":[86],"test":[87],"chips":[88],"across":[89],"two":[90],"batches":[91],"can":[92,176],"successfully":[93],"demonstrate":[94],"average":[96,130],"coefficient":[98],"(TC)":[99],"76.9":[101],"ppm/K":[102],"after":[103],"one-time":[105],"model":[106],"correction.":[107],"The":[108,142,159],"circuit":[110],"consumes":[111],"only":[112],"195\u2013304":[113],"nW":[114],"entire":[117],"maintains":[121],"fluctuation":[124],"just":[126],"0.72%":[127],"with":[128,172],"<inline-formula":[131],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[132],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[133],"<tex-math":[134],"notation=\"LaTeX\">${V}":[135],"_{\\mathrm":[136],"{REF}}$":[137],"</tex-math></inline-formula>":[138],"1.045":[140],"V.":[141],"minimum":[143],"supply":[144],"voltages":[145],"are":[146],"1.5":[147],"V":[148,154],"at":[149,155],"K":[151],"1.9":[153],"K,":[157],"respectively.":[158],"(PVT)-insensitive":[164],"highly":[165],"accurate":[166],"nanowatt":[173],"power":[174],"consumption":[175],"be":[177],"cost-effectively":[179],"into":[180],"interface":[182],"circuits.":[183]},"counts_by_year":[{"year":2025,"cited_by_count":5}],"updated_date":"2025-12-27T23:08:20.325037","created_date":"2025-10-10T00:00:00"}