{"id":"https://openalex.org/W4391696977","doi":"https://doi.org/10.1109/jssc.2024.3355447","title":"A 3-nm FinFET 27.6-Mbit/mm<sup>2</sup> Single-Port 6T SRAM Enabling 0.48\u20131.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking","display_name":"A 3-nm FinFET 27.6-Mbit/mm<sup>2</sup> Single-Port 6T SRAM Enabling 0.48\u20131.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking","publication_year":2024,"publication_date":"2024-02-09","ids":{"openalex":"https://openalex.org/W4391696977","doi":"https://doi.org/10.1109/jssc.2024.3355447"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2024.3355447","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2024.3355447","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101472624","display_name":"Y. Aoyagi","orcid":"https://orcid.org/0009-0000-6406-1601"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yumito Aoyagi","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":"https://orcid.org/0009-0000-6406-1601","affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047952713","display_name":"Koji Nii","orcid":"https://orcid.org/0000-0002-9986-5308"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Koji Nii","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":"https://orcid.org/0000-0002-9986-5308","affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088276903","display_name":"Makoto Yabuuchi","orcid":"https://orcid.org/0000-0003-1515-4726"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Makoto Yabuuchi","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103032021","display_name":"Tomotaka Tanaka","orcid":"https://orcid.org/0009-0009-0000-227X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tomotaka Tanaka","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":"https://orcid.org/0009-0009-0000-227X","affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102538016","display_name":"Yuichiro Ishii","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuichiro Ishii","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020509077","display_name":"Yoshiaki Osada","orcid":"https://orcid.org/0009-0001-2796-4243"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yoshiaki Osada","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":"https://orcid.org/0009-0001-2796-4243","affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112437215","display_name":"Takaaki Nakazato","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Takaaki Nakazato","raw_affiliation_strings":["Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Japan Memory Design Program, Memory Solution Division, TSMC Design Technology Japan, Yokohama, Kanagawa, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108900246","display_name":"Isabel Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Isabel Wang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102914090","display_name":"Yu-Hao Hsu","orcid":"https://orcid.org/0000-0002-3165-1960"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Hao Hsu","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102615711","display_name":"Hong-Chen Cheng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hong-Chen Cheng","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102320565","display_name":"Hung-Jen Liao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hung-Jen Liao","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5114087240","display_name":"Tsung-Yung Jonathan Chang","orcid":"https://orcid.org/0009-0007-6505-5474"},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Yung Jonathan Chang","raw_affiliation_strings":["Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1856,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.44337682,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"59","issue":"4","first_page":"1225","last_page":"1234"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/megabit","display_name":"Megabit","score":0.5943829417228699},{"id":"https://openalex.org/keywords/notation","display_name":"Notation","score":0.5086106061935425},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.4861547648906708},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.44995197653770447},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.4106496572494507},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38300061225891113},{"id":"https://openalex.org/keywords/arithmetic","display_name":"Arithmetic","score":0.3697941303253174},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.35566866397857666},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3534125089645386},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3348982334136963},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.331240177154541},{"id":"https://openalex.org/keywords/discrete-mathematics","display_name":"Discrete mathematics","score":0.3266088366508484},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2896292805671692},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.21259194612503052},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1903020441532135},{"id":"https://openalex.org/keywords/programming-language","display_name":"Programming language","score":0.0905027687549591}],"concepts":[{"id":"https://openalex.org/C185177783","wikidata":"https://www.wikidata.org/wiki/Q3332814","display_name":"Megabit","level":2,"score":0.5943829417228699},{"id":"https://openalex.org/C45357846","wikidata":"https://www.wikidata.org/wiki/Q2001982","display_name":"Notation","level":2,"score":0.5086106061935425},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.4861547648906708},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.44995197653770447},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4106496572494507},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38300061225891113},{"id":"https://openalex.org/C94375191","wikidata":"https://www.wikidata.org/wiki/Q11205","display_name":"Arithmetic","level":1,"score":0.3697941303253174},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.35566866397857666},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3534125089645386},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3348982334136963},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.331240177154541},{"id":"https://openalex.org/C118615104","wikidata":"https://www.wikidata.org/wiki/Q121416","display_name":"Discrete mathematics","level":1,"score":0.3266088366508484},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2896292805671692},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.21259194612503052},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1903020441532135},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0905027687549591},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2024.3355447","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2024.3355447","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5299999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1984849261","https://openalex.org/W2048611611","https://openalex.org/W2073818373","https://openalex.org/W2081490067","https://openalex.org/W2100483769","https://openalex.org/W2115933691","https://openalex.org/W2159137223","https://openalex.org/W2169964341","https://openalex.org/W2243795914","https://openalex.org/W2289536574","https://openalex.org/W2591785472","https://openalex.org/W2593872692","https://openalex.org/W2789659455","https://openalex.org/W2789777840","https://openalex.org/W2791748601","https://openalex.org/W2892329555","https://openalex.org/W3048906546","https://openalex.org/W3093756928","https://openalex.org/W3112727124","https://openalex.org/W3134150472","https://openalex.org/W3134817854","https://openalex.org/W3184818812","https://openalex.org/W4286571747","https://openalex.org/W4313306178","https://openalex.org/W4385192466","https://openalex.org/W4385210943","https://openalex.org/W4385213884","https://openalex.org/W4385223676","https://openalex.org/W6672536603","https://openalex.org/W6748271566","https://openalex.org/W6849066042","https://openalex.org/W6849146887"],"related_works":["https://openalex.org/W2064744906","https://openalex.org/W2094638712","https://openalex.org/W2042005224","https://openalex.org/W2057684636","https://openalex.org/W2030816003","https://openalex.org/W2343227376","https://openalex.org/W4239992647","https://openalex.org/W2150013480","https://openalex.org/W2170007206","https://openalex.org/W1554458299"],"abstract_inverted_index":{"A":[0,50],"3-nm":[1,59],"FinFET":[2,60],"single-port":[3],"(SP)":[4],"6T":[5],"SRAM":[6,56],"macro":[7,57],"is":[8,69,87],"proposed":[9],"that":[10],"utilizes":[11],"a":[12,97],"far-end":[13],"pre-charge":[14,32],"(FPC)":[15],"circuit":[16],"and":[17,34,64,72,83],"weak-bit":[18],"(WB)":[19],"tracking":[20],"circuit.":[21],"These":[22],"circuits":[23],"can":[24],"decrease":[25],"write":[26],"cycle":[27,37],"time":[28,38],"by":[29,39,122],"decreasing":[30],"the":[31,41,53,110],"period":[33],"engaging":[35],"read":[36],"enhancing":[40],"trackability":[42],"of":[43,52,77,102,113],"sense":[44],"enable":[45],"timing":[46],"over":[47],"supply":[48],"voltage.":[49],"prototype":[51],"434-kbit":[54],"SP":[55],"on":[58],"technology":[61],"was":[62],"designed":[63],"fabricated.":[65],"The":[66],"bit":[67],"density":[68,123],"27.6":[70],"Mbit/mm2":[71],"it":[73],"achieved":[74,109],"an":[75],"operation":[76],"1.9":[78],"GHz":[79],"at":[80],"0.75":[81],"V":[82],"85":[84],"\u00b0C,":[85],"which":[86],"35%":[88],"faster":[89],"than":[90],"conventional":[91],"performance.":[92],"Measured":[93],"silicon":[94],"data":[95],"demonstrate":[96],"wide":[98],"operating":[99],"voltage":[100,135],"range":[101],"0.48\u20131.2":[103],"V.":[104],"This":[105],"proposal":[106],"has":[107],"also":[108],"best":[111],"figure":[112],"merit":[114],"(FoM)":[115],"compared":[116],"to":[117],"other":[118],"works,":[119],"as":[120],"defined":[121],"<inline-formula":[124,137],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[125,138],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[126,139],"<tex-math":[127,140],"notation=\"LaTeX\">$\\times":[128],"$":[129],"</tex-math></inline-formula>":[130,143],"access":[131],"per":[132],"second":[133],"(APS)/supply":[134],"(":[136],"notation=\"LaTeX\">$V_{\\text":[141],"{DD}}$":[142],").":[144]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}