{"id":"https://openalex.org/W4386108378","doi":"https://doi.org/10.1109/jssc.2023.3297605","title":"A Four-Phase Time-Based Switched-Capacitor LDO With 13-ns Settling Time at 0.5-V Input for Energy-Efficient Computing in SoC Applications","display_name":"A Four-Phase Time-Based Switched-Capacitor LDO With 13-ns Settling Time at 0.5-V Input for Energy-Efficient Computing in SoC Applications","publication_year":2023,"publication_date":"2023-08-23","ids":{"openalex":"https://openalex.org/W4386108378","doi":"https://doi.org/10.1109/jssc.2023.3297605"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2023.3297605","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2023.3297605","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100359573","display_name":"Hyunjin Kim","orcid":"https://orcid.org/0000-0003-3411-3997"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hyunjin Kim","raw_affiliation_strings":["Department of Semiconductor System Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Semiconductor System Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012301711","display_name":"Changhun Park","orcid":"https://orcid.org/0009-0003-3288-3581"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhun Park","raw_affiliation_strings":["Department of Semiconductor System Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Semiconductor System Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101727097","display_name":"Inho Park","orcid":"https://orcid.org/0000-0003-2067-0557"},"institutions":[{"id":"https://openalex.org/I191879574","display_name":"Inha University","ror":"https://ror.org/01easw929","country_code":"KR","type":"education","lineage":["https://openalex.org/I191879574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Inho Park","raw_affiliation_strings":["Department of Electronic Engineering, Inha University, Incheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Inha University, Incheon, South Korea","institution_ids":["https://openalex.org/I191879574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064256089","display_name":"Taehyeong Park","orcid":"https://orcid.org/0000-0003-4059-597X"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehyeong Park","raw_affiliation_strings":["Department of Semiconductor System Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Semiconductor System Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101877431","display_name":"Seungwoo Park","orcid":null},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwoo Park","raw_affiliation_strings":["Department of Semiconductor System Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Semiconductor System Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100777100","display_name":"Chulwoo Kim","orcid":"https://orcid.org/0000-0003-4379-7905"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chulwoo Kim","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100359573"],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":null,"apc_paid":null,"fwci":0.7679,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.67696635,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":98},"biblio":{"volume":"59","issue":"2","first_page":"551","last_page":"562"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5821094512939453},{"id":"https://openalex.org/keywords/notation","display_name":"Notation","score":0.47268348932266235},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3350975215435028},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.3259713053703308},{"id":"https://openalex.org/keywords/arithmetic","display_name":"Arithmetic","score":0.26869139075279236},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2620301842689514},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2616381347179413},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.13618263602256775}],"concepts":[{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5821094512939453},{"id":"https://openalex.org/C45357846","wikidata":"https://www.wikidata.org/wiki/Q2001982","display_name":"Notation","level":2,"score":0.47268348932266235},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3350975215435028},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.3259713053703308},{"id":"https://openalex.org/C94375191","wikidata":"https://www.wikidata.org/wiki/Q11205","display_name":"Arithmetic","level":1,"score":0.26869139075279236},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2620301842689514},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2616381347179413},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.13618263602256775}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2023.3297605","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2023.3297605","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.9100000262260437,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G2819299374","display_name":null,"funder_award_id":"2022R1A2C3012245","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":41,"referenced_works":["https://openalex.org/W2031283182","https://openalex.org/W2034720635","https://openalex.org/W2043104325","https://openalex.org/W2049865129","https://openalex.org/W2054166664","https://openalex.org/W2054989520","https://openalex.org/W2077338724","https://openalex.org/W2087474598","https://openalex.org/W2164002677","https://openalex.org/W2221168811","https://openalex.org/W2318181542","https://openalex.org/W2319748949","https://openalex.org/W2551461123","https://openalex.org/W2552288005","https://openalex.org/W2598754932","https://openalex.org/W2756683889","https://openalex.org/W2760813205","https://openalex.org/W2763302904","https://openalex.org/W2770079565","https://openalex.org/W2770869942","https://openalex.org/W2774154187","https://openalex.org/W2894668784","https://openalex.org/W2897516574","https://openalex.org/W2903841424","https://openalex.org/W2908635805","https://openalex.org/W2921471330","https://openalex.org/W2953742379","https://openalex.org/W2964322141","https://openalex.org/W2984203002","https://openalex.org/W2997154281","https://openalex.org/W3041950694","https://openalex.org/W3045068248","https://openalex.org/W3046131452","https://openalex.org/W3048038487","https://openalex.org/W3110546428","https://openalex.org/W3134808003","https://openalex.org/W3161924788","https://openalex.org/W3184152611","https://openalex.org/W3188845534","https://openalex.org/W3200963035","https://openalex.org/W3208932732"],"related_works":["https://openalex.org/W1979597421","https://openalex.org/W2007980826","https://openalex.org/W4245490552","https://openalex.org/W4225152035","https://openalex.org/W2504004674","https://openalex.org/W2061531152","https://openalex.org/W3002753104","https://openalex.org/W2077600819","https://openalex.org/W1587224694","https://openalex.org/W2911598644"],"abstract_inverted_index":{"This":[0],"article":[1],"presents":[2],"a":[3,47,73,165,206,215,228],"four-phase":[4,48],"time-based":[5,162,212],"switched-capacitor":[6],"low-dropout":[7],"(SCLDO)":[8],"regulator":[9,45],"that":[10,86],"regulates":[11],"an":[12,29,237],"output":[13],"load":[14,120],"voltage":[15,31,92,116],"(":[16,32,77],"<inline-formula":[17,33,78,98,109,132,151,166,179,193,217],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[18,34,79,99,110,133,152,167,180,194,218],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[19,35,80,100,111,134,153,168,181,195,219],"<tex-math":[20,36,81,101,112,135,154,169,182,196,220],"notation=\"LaTeX\">$V_{\\text":[21,37,102,113,155,170,183,197],"{OUT}}$":[22,103,114,171,222],"</tex-math></inline-formula>":[23,39,84,104,115,138,157,172,185,199,223],")":[24,40,85],"of":[25,41,93,175,224,230,233,240],"0.35\u20130.95":[26],"V":[27,188,202],"with":[28,62,236],"input":[30],"{IN}}$":[38,156,184,198],"0.45\u20131":[42],"V.":[43],"The":[44],"employs":[46,72],"time":[49,61,174],"quantizer,":[50],"which":[51],"enables":[52],"high":[53],"proportional":[54],"gain":[55],"control":[56],"and":[57,97,130,145,189,227],"short":[58],"transient":[59],"response":[60],"relatively":[63],"low":[64],"quiescent":[65],"current.":[66],"In":[67],"addition,":[68],"the":[69,90,94,108,119,123,160,210],"proposed":[70,161,211],"SCLDO":[71,124,163,213],"9.6-pF":[74],"coupling":[75],"capacitor":[76,126],"notation=\"LaTeX\">$C_{\\text":[82,136],"{C}}$":[83,137],"is":[87],"connected":[88],"to":[89,143],"gate":[91],"pass":[95],"transistor":[96],"node,":[105],"thereby":[106],"reducing":[107],"drop":[117],"during":[118],"transition.":[121],"Because":[122],"utilizes":[125],"components":[127],"when":[128],"charging":[129],"discharging":[131],",":[139],"it":[140],"provides":[141],"robustness":[142],"process":[144],"temperature":[146],"variations":[147],"even":[148],"at":[149,178,192],"low-":[150],"conditions.":[158],"Therefore,":[159],"achieved":[164],"settling":[173],"4.4":[176],"ns":[177,191],"=":[186,200],"1":[187],"13":[190],"0.5":[201],"condition.":[203],"Fabricated":[204],"in":[205],"28-nm":[207],"CMOS":[208],"process,":[209],"achieves":[214],"maximum":[216],"notation=\"LaTeX\">$I_{\\text":[221],"400":[225],"mA":[226],"figure":[229],"merit":[231],"(FoM)":[232],"3.0":[234],"fs,":[235],"active":[238],"area":[239],"0.021":[241],"mm2.":[242]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":4}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}