{"id":"https://openalex.org/W4383890586","doi":"https://doi.org/10.1109/jssc.2023.3290357","title":"A Process-Scalable Ultra-Low-Voltage Sleep Timer With a Time-Domain Amplifier and a Switch-Less Resistance Multiplier","display_name":"A Process-Scalable Ultra-Low-Voltage Sleep Timer With a Time-Domain Amplifier and a Switch-Less Resistance Multiplier","publication_year":2023,"publication_date":"2023-07-11","ids":{"openalex":"https://openalex.org/W4383890586","doi":"https://doi.org/10.1109/jssc.2023.3290357"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2023.3290357","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2023.3290357","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036380846","display_name":"Chongsoo Jung","orcid":"https://orcid.org/0000-0002-4251-9973"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Chongsoo Jung","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089309965","display_name":"Hoyong Seong","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hoyong Seong","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028702107","display_name":"Injun Choi","orcid":"https://orcid.org/0000-0001-8645-4537"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Injun Choi","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034621834","display_name":"Sohmyung Ha","orcid":"https://orcid.org/0000-0003-3589-086X"},"institutions":[{"id":"https://openalex.org/I120250893","display_name":"New York University Abu Dhabi","ror":"https://ror.org/00e5k0821","country_code":"AE","type":"education","lineage":["https://openalex.org/I120250893","https://openalex.org/I57206974"]},{"id":"https://openalex.org/I57206974","display_name":"New York University","ror":"https://ror.org/0190ak572","country_code":"US","type":"education","lineage":["https://openalex.org/I57206974"]}],"countries":["AE","US"],"is_corresponding":false,"raw_author_name":"Sohmyung Ha","raw_affiliation_strings":["Division of Engineering, New York University Abu Dhabi, Abu Dhabi, United Arab Emirates","Tandon School of Engineering, New York University, New York, NY, USA"],"affiliations":[{"raw_affiliation_string":"Division of Engineering, New York University Abu Dhabi, Abu Dhabi, United Arab Emirates","institution_ids":["https://openalex.org/I120250893"]},{"raw_affiliation_string":"Tandon School of Engineering, New York University, New York, NY, USA","institution_ids":["https://openalex.org/I57206974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023245534","display_name":"Minkyu Je","orcid":"https://orcid.org/0000-0003-4580-2771"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minkyu Je","raw_affiliation_strings":["School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5036380846"],"corresponding_institution_ids":["https://openalex.org/I157485424"],"apc_list":null,"apc_paid":null,"fwci":0.4388,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.57172396,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":"58","issue":"10","first_page":"2675","last_page":"2684"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/timer","display_name":"Timer","score":0.8129727840423584},{"id":"https://openalex.org/keywords/lookup-table","display_name":"Lookup table","score":0.7129546403884888},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5833020806312561},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5323389768600464},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5088586807250977},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4951583445072174},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4463269114494324},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.43732523918151855},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4270513355731964},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4251961410045624},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37972110509872437},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.36936086416244507},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.2831040620803833},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23816654086112976},{"id":"https://openalex.org/keywords/microcontroller","display_name":"Microcontroller","score":0.12295350432395935}],"concepts":[{"id":"https://openalex.org/C2776633867","wikidata":"https://www.wikidata.org/wiki/Q186612","display_name":"Timer","level":3,"score":0.8129727840423584},{"id":"https://openalex.org/C134835016","wikidata":"https://www.wikidata.org/wiki/Q690265","display_name":"Lookup table","level":2,"score":0.7129546403884888},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5833020806312561},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5323389768600464},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5088586807250977},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4951583445072174},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4463269114494324},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43732523918151855},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4270513355731964},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4251961410045624},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37972110509872437},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36936086416244507},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.2831040620803833},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23816654086112976},{"id":"https://openalex.org/C173018170","wikidata":"https://www.wikidata.org/wiki/Q165678","display_name":"Microcontroller","level":2,"score":0.12295350432395935},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2023.3290357","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2023.3290357","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.9100000262260437,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G4840121288","display_name":null,"funder_award_id":"IO201209-07925-01","funder_id":"https://openalex.org/F4320332195","funder_display_name":"Samsung"}],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1847530274","https://openalex.org/W2014036816","https://openalex.org/W2014617636","https://openalex.org/W2055770207","https://openalex.org/W2099859272","https://openalex.org/W2156464726","https://openalex.org/W2159423488","https://openalex.org/W2172298267","https://openalex.org/W2292523461","https://openalex.org/W2311698511","https://openalex.org/W2544075277","https://openalex.org/W2568829150","https://openalex.org/W2771988120","https://openalex.org/W2806039600","https://openalex.org/W2898745153","https://openalex.org/W2966672930","https://openalex.org/W2979694538","https://openalex.org/W3015926890","https://openalex.org/W3015949732","https://openalex.org/W3048749073","https://openalex.org/W3048924999","https://openalex.org/W3135661566","https://openalex.org/W3180764612","https://openalex.org/W3211036016","https://openalex.org/W4206592536","https://openalex.org/W4220895080","https://openalex.org/W4312036216"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2360439717","https://openalex.org/W2388292776","https://openalex.org/W2765214557","https://openalex.org/W2361181213","https://openalex.org/W1031622928","https://openalex.org/W2350005463","https://openalex.org/W2347554032","https://openalex.org/W4293162581","https://openalex.org/W1459934432"],"abstract_inverted_index":{"The":[0,53,82],"on-chip":[1],"sleep":[2,36,55],"timer":[3,37,56],"is":[4,38],"a":[5,19,68,73,79,89,93,109,114],"compact":[6],"and":[7,23,51,72,112],"cost-effective":[8],"solution":[9],"that":[10],"provides":[11],"high-precision":[12],"temperature":[13,25,95],"accuracy":[14],"through":[15],"the":[16,42],"use":[17],"of":[18],"lookup":[20],"table":[21],"(LUT)":[22],"dedicated":[24],"sensor":[26],"(TS).":[27],"However,":[28],"maintaining":[29],"energy":[30],"efficiency":[31],"while":[32,103],"integrating":[33],"an":[34,62,101],"accurate":[35],"challenging":[39],"due":[40],"to":[41],"significant":[43],"increase":[44],"in":[45,88],"leakage":[46],"currents":[47],"with":[48,78,97],"process":[49],"scaling":[50],"temperature.":[52],"proposed":[54],"overcomes":[57],"these":[58],"limitations":[59],"by":[60],"utilizing":[61],"ultra-low-voltage":[63],"(ULV)":[64],"frequency-locked-loop":[65],"(FLL)":[66],"architecture,":[67],"time-domain":[69],"amplifier":[70],"(TDA),":[71],"switch-less":[74],"resistance":[75],"multiplier":[76],"(SLRM)":[77],"gate-leakage-leveraging":[80],"technique.":[81],"prototype":[83],"integrated":[84],"circuit":[85],"(IC),":[86],"fabricated":[87],"65-nm":[90],"CMOS,":[91],"achieves":[92],"2.73-ppm/\u00b0C":[94],"dependency":[96],"calibration":[98],"based":[99],"on":[100],"LUT":[102],"consuming":[104],"only":[105],"63":[106],"nW":[107],"at":[108],"0.4-V":[110],"supply":[111],"producing":[113],"180-kHz":[115],"frequency.":[116]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2023,"cited_by_count":1}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}