{"id":"https://openalex.org/W4313546932","doi":"https://doi.org/10.1109/jssc.2022.3232096","title":"A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features","display_name":"A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features","publication_year":2023,"publication_date":"2023-01-04","ids":{"openalex":"https://openalex.org/W4313546932","doi":"https://doi.org/10.1109/jssc.2022.3232096"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2022.3232096","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3232096","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047352904","display_name":"Yesin Ryu","orcid":"https://orcid.org/0000-0002-2678-7396"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Yesin Ryu","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-2678-7396","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018054549","display_name":"Sung-Gi Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Gi Ahn","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100420193","display_name":"Jae\u2010Hoon Lee","orcid":"https://orcid.org/0000-0002-8157-1256"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Hoon Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064688250","display_name":"Jaewon Park","orcid":"https://orcid.org/0000-0002-5704-726X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaewon Park","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101905578","display_name":"Yong Ki Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong Ki Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0808-642X","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065002602","display_name":"Hyochang Kim","orcid":"https://orcid.org/0000-0002-8360-4103"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyochang Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-8360-4103","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090466305","display_name":"Yeong Geol Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yeong Geol Song","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006810296","display_name":"Han-Won Cho","orcid":"https://orcid.org/0000-0003-4610-633X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Han-Won Cho","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030690151","display_name":"Sunghye Cho","orcid":"https://orcid.org/0000-0003-4545-1289"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghye Cho","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022654565","display_name":"Seung Ho Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seung Ho Song","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042720623","display_name":"Haesuk Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Haesuk Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080059202","display_name":"Useung Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Useung Shin","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084678270","display_name":"Jong\u2010Hyun Ahn","orcid":"https://orcid.org/0000-0002-8135-7719"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jonghyun Ahn","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001098187","display_name":"Je-Min Ryu","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Je-Min Ryu","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034708385","display_name":"Sukhan Lee","orcid":"https://orcid.org/0000-0001-7052-8925"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sukhan Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108828262","display_name":"Kyoung-Hwan Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyoung-Hwan Lim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048329638","display_name":"Jungyu Lee","orcid":"https://orcid.org/0009-0002-8217-3169"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungyu Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002515807","display_name":"Jeong Hoan Park","orcid":"https://orcid.org/0000-0002-8882-0091"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeong Hoan Park","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103006739","display_name":"Jae-Seung Jeong","orcid":"https://orcid.org/0000-0001-7386-4473"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Seung Jeong","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-7386-4473","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039718583","display_name":"Sunghwan Joo","orcid":"https://orcid.org/0000-0003-0535-7853"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghwan Joo","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0535-7853","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014856852","display_name":"Dajung Cho","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dajung Cho","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100373072","display_name":"Soyoung Kim","orcid":"https://orcid.org/0000-0001-5875-2959"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"So Young Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101411023","display_name":"Minsu Lee","orcid":"https://orcid.org/0000-0001-7552-611X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minsu Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039013551","display_name":"Hyunho Kim","orcid":"https://orcid.org/0000-0003-1058-5711"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunho Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-1058-5711","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069184877","display_name":"Min Hwan Kim","orcid":"https://orcid.org/0000-0002-1595-6342"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minhwan Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034193462","display_name":"Jae-San Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-San Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113149893","display_name":"Jinah Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinah Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051761154","display_name":"Hyun Gil Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Gil Kang","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055277661","display_name":"Myung-Kyu Lee","orcid":"https://orcid.org/0000-0003-0922-5233"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myung-Kyu Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102860410","display_name":"Sung-Rae Kim","orcid":"https://orcid.org/0000-0002-5030-5561"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Rae Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111661017","display_name":"Young-Cheon Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young-Cheon Kwon","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063885151","display_name":"Young Yong Byun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Yong Byun","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022357313","display_name":"Ki-Jun Lee","orcid":"https://orcid.org/0000-0002-6607-7540"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kijun Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015776537","display_name":"Sangkil Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangkil Park","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040079058","display_name":"Jaeyoun Youn","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeyoun Youn","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058899166","display_name":"Myeong-O Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myeong-O Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050861404","display_name":"Kyomin Sohn","orcid":"https://orcid.org/0000-0002-8094-9843"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyomin Sohn","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-8094-9843","affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035659453","display_name":"Sangjoon Hwang","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Joon Hwang","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100401544","display_name":"Joo\u2010Young Lee","orcid":"https://orcid.org/0000-0002-5208-0941"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jooyoung Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":39,"corresponding_author_ids":["https://openalex.org/A5047352904"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":4.9825,"has_fulltext":false,"cited_by_count":39,"citation_normalized_percentile":{"value":0.95915597,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":"58","issue":"4","first_page":"1051","last_page":"1061"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7102333307266235},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.609958291053772},{"id":"https://openalex.org/keywords/error-detection-and-correction","display_name":"Error detection and correction","score":0.579501748085022},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5305279493331909},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4877975285053253},{"id":"https://openalex.org/keywords/system-bus","display_name":"System bus","score":0.41091370582580566},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.410245805978775},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.20848092436790466},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.1295805275440216}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7102333307266235},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.609958291053772},{"id":"https://openalex.org/C103088060","wikidata":"https://www.wikidata.org/wiki/Q1062839","display_name":"Error detection and correction","level":2,"score":0.579501748085022},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5305279493331909},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4877975285053253},{"id":"https://openalex.org/C136321198","wikidata":"https://www.wikidata.org/wiki/Q2377054","display_name":"System bus","level":2,"score":0.41091370582580566},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.410245805978775},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.20848092436790466},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.1295805275440216}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2022.3232096","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3232096","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5099999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W289624287","https://openalex.org/W2152385473","https://openalex.org/W2162256736","https://openalex.org/W2520782513","https://openalex.org/W2606722458","https://openalex.org/W2612387305","https://openalex.org/W3015603377","https://openalex.org/W3016166938","https://openalex.org/W3097413296","https://openalex.org/W3112402894","https://openalex.org/W3137509183","https://openalex.org/W3204625459","https://openalex.org/W4220931755","https://openalex.org/W4226094037"],"related_works":["https://openalex.org/W2127001124","https://openalex.org/W2518930778","https://openalex.org/W2979599569","https://openalex.org/W3007039213","https://openalex.org/W3094611732","https://openalex.org/W2944414554","https://openalex.org/W2559795407","https://openalex.org/W2000563648","https://openalex.org/W3009022466","https://openalex.org/W816617885"],"abstract_inverted_index":{"This":[0],"article":[1],"proposes":[2],"practical":[3],"design":[4,19],"techniques":[5],"to":[6,23,28,43,79,124],"enhance":[7],"performance":[8],"and":[9,53,62,66,84,129],"reliability":[10],"of":[11,113],"1024":[12,125],"GB/s":[13,126],"high-bandwidth":[14],"memory-3":[15],"(HBM3).":[16],"Effective":[17],"data-bus":[18,30,55],"methods":[20],"are":[21,58,77],"applied":[22],"transfer":[24],"data":[25,34],"from":[26],"multi-bank":[27],"a":[29,32,45,50,93,121,134],"with":[31,72,97],"sufficient":[33],"fetch":[35],"margin.":[36],"A":[37,87,104],"symbol-based":[38],"on-die":[39],"error-correcting":[40],"code":[41],"(OD-ECC)":[42],"correct":[44],"16-bit":[46],"error,":[47],"bounded":[48],"by":[49,146],"sub-wordline":[51],"(WL),":[52],"parallelized":[54],"inversion":[56],"(DBI)":[57],"implemented.":[59],"Error":[60],"check":[61,69],"scrub":[63],"(ECS)":[64],"mode":[65,71],"repair":[67],"capability":[68],"(RCC)":[70],"an":[73,142],"internal":[74],"serial":[75],"interface":[76],"designed":[78],"support":[80],"system":[81],"reliability,":[82],"availability,":[83],"serviceability":[85],"(RAS).":[86],"memory":[88],"built-in":[89],"self-test":[90],"(MBIST)":[91],"provides":[92,130],"unified":[94],"at-speed":[95],"test":[96],"programmability":[98],"based":[99],"on":[100],"test-set":[101],"units":[102],"(TUs).":[103],"16":[105],"GB":[106],"HBM3":[107],"fabricated":[108],"in":[109],"the":[110,114],"third":[111],"generation":[112],"10":[115],"nm":[116],"class":[117],"DRAM":[118],"process":[119],"achieves":[120],"bandwidth":[122],"up":[123],"(8":[127],"Gb/s/pin)":[128],"stable":[131],"operation":[132],"at":[133],"high":[135],"temperature":[136],"(e.g.,":[137],"105":[138],"\u00b0C)":[139],"while":[140],"improving":[141],"error":[143],"detection":[144],"rate":[145],"92.2%.":[147]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":13},{"year":2024,"cited_by_count":14},{"year":2023,"cited_by_count":5}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}