{"id":"https://openalex.org/W4313060442","doi":"https://doi.org/10.1109/jssc.2022.3219091","title":"A Differential Flip-Flop With Static Contention-Free Characteristics in 28 nm for Low-Voltage, Low-Power Applications","display_name":"A Differential Flip-Flop With Static Contention-Free Characteristics in 28 nm for Low-Voltage, Low-Power Applications","publication_year":2022,"publication_date":"2022-11-15","ids":{"openalex":"https://openalex.org/W4313060442","doi":"https://doi.org/10.1109/jssc.2022.3219091"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2022.3219091","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3219091","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089255813","display_name":"Gicheol Shin","orcid":null},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Gicheol Shin","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100348726","display_name":"Eunyoung Lee","orcid":"https://orcid.org/0000-0001-7105-2199"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Eunyoung Lee","raw_affiliation_strings":["Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100341491","display_name":"Jongmin Lee","orcid":"https://orcid.org/0000-0002-6167-7926"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongmin Lee","raw_affiliation_strings":["Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101431291","display_name":"Yongmin Lee","orcid":"https://orcid.org/0000-0002-3676-0576"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]},{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yongmin Lee","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5040564153","display_name":"Yoonmyung Lee","orcid":"https://orcid.org/0000-0001-9468-1692"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoonmyung Lee","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Memory Division, the Foundry Division, and the LSI Division, Samsung Electronics, Suwon, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5089255813"],"corresponding_institution_ids":["https://openalex.org/I848706"],"apc_list":null,"apc_paid":null,"fwci":2.3786,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.89086641,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"58","issue":"5","first_page":"1496","last_page":"1504"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flip-flop","display_name":"Flip-flop","score":0.8485261797904968},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6206227540969849},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6173619031906128},{"id":"https://openalex.org/keywords/transmission-gate","display_name":"Transmission gate","score":0.567841112613678},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.54817134141922},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5275067090988159},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5044306516647339},{"id":"https://openalex.org/keywords/differential","display_name":"Differential (mechanical device)","score":0.48620766401290894},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.4487534761428833},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4333919286727905},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38800984621047974},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3704524636268616},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35866934061050415},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3561113774776459},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3021281957626343},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.26230284571647644},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2046523094177246}],"concepts":[{"id":"https://openalex.org/C2781007278","wikidata":"https://www.wikidata.org/wiki/Q183406","display_name":"Flip-flop","level":3,"score":0.8485261797904968},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6206227540969849},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6173619031906128},{"id":"https://openalex.org/C2780949067","wikidata":"https://www.wikidata.org/wiki/Q1136752","display_name":"Transmission gate","level":4,"score":0.567841112613678},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.54817134141922},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5275067090988159},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5044306516647339},{"id":"https://openalex.org/C93226319","wikidata":"https://www.wikidata.org/wiki/Q193137","display_name":"Differential (mechanical device)","level":2,"score":0.48620766401290894},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.4487534761428833},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4333919286727905},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38800984621047974},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3704524636268616},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35866934061050415},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3561113774776459},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3021281957626343},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.26230284571647644},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2046523094177246},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2022.3219091","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3219091","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[{"id":"https://openalex.org/G2710781102","display_name":null,"funder_award_id":"2022R1A2B5B02002350","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G7743314029","display_name":null,"funder_award_id":"2020R1A4A2002806","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W649475307","https://openalex.org/W1557691383","https://openalex.org/W1969390180","https://openalex.org/W1974982221","https://openalex.org/W1995665089","https://openalex.org/W1998525920","https://openalex.org/W2019198721","https://openalex.org/W2047694997","https://openalex.org/W2109195618","https://openalex.org/W2121878622","https://openalex.org/W2145876393","https://openalex.org/W2166964417","https://openalex.org/W2401935718","https://openalex.org/W2566930948","https://openalex.org/W2778020922","https://openalex.org/W2893484398","https://openalex.org/W2898386872","https://openalex.org/W3019846196","https://openalex.org/W3151430435","https://openalex.org/W3163408809"],"related_works":["https://openalex.org/W2797823235","https://openalex.org/W2120898945","https://openalex.org/W1808420522","https://openalex.org/W2050324876","https://openalex.org/W2360732944","https://openalex.org/W2611474147","https://openalex.org/W3111333564","https://openalex.org/W4313404246","https://openalex.org/W2371966460","https://openalex.org/W2075753352"],"abstract_inverted_index":{"A":[0],"static":[1,20,45],"contention-free":[2,22,47],"differential":[3,31],"flip-flop":[4,41],"(SCDFF)":[5],"is":[6,81],"presented":[7],"in":[8,73],"28-nm":[9,74],"CMOS":[10,75],"for":[11],"low-voltage":[12],"and":[13,21,33,46],"low-power":[14],"applications.":[15],"The":[16,43,65],"SCDFF":[17],"offers":[18],"fully":[19,44],"operation":[23,48],"without":[24],"redundant":[25],"internal":[26],"clock":[27],"transitions":[28],"with":[29,68,85,108],"footed":[30],"latches":[32],"the":[34],"same":[35],"area":[36],"as":[37,111,113],"a":[38,54,69,86,97],"conventional":[39],"transmission-gate":[40],"(TGFF).":[42],"allows":[49],"high":[50],"variation":[51],"tolerance":[52],"at":[53,90],"low":[55,112],"supply":[56,109],"voltage":[57,61,110],"regime,":[58],"achieving":[59],"wide-range":[60],"scalability":[62],"(1\u20130.3":[63],"V).":[64],"measurement":[66],"results":[67],"test":[70],"chip":[71],"fabricated":[72],"technology":[76],"show":[77],"that":[78,95],"power":[79],"consumption":[80],"reduced":[82],"by":[83],"64%/56%":[84],"0%/10%":[87],"activity":[88],"ratio":[89],"1":[91],"V":[92],"compared":[93],"to":[94],"of":[96],"TGFF.":[98],"All":[99],"100":[100],"dies":[101],"from":[102],"five":[103],"process":[104],"corners":[105],"were":[106],"functional":[107],"0.28":[114],"V.":[115]},"counts_by_year":[{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":12},{"year":2023,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}