{"id":"https://openalex.org/W4285070777","doi":"https://doi.org/10.1109/jssc.2022.3181792","title":"A \u201310 to \u201320-V Inverting Buck-Boost Drive GaN Driver With Sub-1-\u03bcA Leakage Current <i>V</i> <sub>th</sub> Tracking Technique for 20-MHz Depletion-Mode GaN Metal\u2013Insulator\u2013Semiconductor High-Electron-Mobility Transistors","display_name":"A \u201310 to \u201320-V Inverting Buck-Boost Drive GaN Driver With Sub-1-\u03bcA Leakage Current <i>V</i> <sub>th</sub> Tracking Technique for 20-MHz Depletion-Mode GaN Metal\u2013Insulator\u2013Semiconductor High-Electron-Mobility Transistors","publication_year":2022,"publication_date":"2022-06-22","ids":{"openalex":"https://openalex.org/W4285070777","doi":"https://doi.org/10.1109/jssc.2022.3181792"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2022.3181792","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3181792","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025518846","display_name":"Yong-Hwa Wen","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Yong-Hwa Wen","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021976688","display_name":"Tz-Wun Wang","orcid":"https://orcid.org/0000-0002-7521-9926"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tz-Wun Wang","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104078498","display_name":"Tzu-Hsien Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tzu-Hsien Yang","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041383305","display_name":"Sheng-Hsi Hung","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sheng-Hsi Hung","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082120438","display_name":"Kuo-Lin Zheng","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kuo-Lin Zheng","raw_affiliation_strings":["Chip-GaN Power Semiconductor Corporation, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chip-GaN Power Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055541384","display_name":"Ke\u2010Horng Chen","orcid":"https://orcid.org/0000-0001-9589-6521"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ke-Horng Chen","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":"https://orcid.org/0000-0001-9589-6521","affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101137294","display_name":"Ying-Hsi Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I901624438","display_name":"Realtek (Taiwan)","ror":"https://ror.org/05x1ffr83","country_code":"TW","type":"company","lineage":["https://openalex.org/I901624438"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ying-Hsi Lin","raw_affiliation_strings":["Realtek Semiconductor Corporation, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Realtek Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I901624438"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103873920","display_name":"Shian-Ru Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I901624438","display_name":"Realtek (Taiwan)","ror":"https://ror.org/05x1ffr83","country_code":"TW","type":"company","lineage":["https://openalex.org/I901624438"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shian-Ru Lin","raw_affiliation_strings":["Realtek Semiconductor Corporation, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Realtek Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I901624438"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108298325","display_name":"Tsung-Yen Tsai","orcid":null},"institutions":[{"id":"https://openalex.org/I901624438","display_name":"Realtek (Taiwan)","ror":"https://ror.org/05x1ffr83","country_code":"TW","type":"company","lineage":["https://openalex.org/I901624438"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Yen Tsai","raw_affiliation_strings":["Realtek Semiconductor Corporation, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Realtek Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I901624438"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5025518846"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":0.276,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53627064,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":"58","issue":"2","first_page":"497","last_page":"507"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6562831401824951},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.49557268619537354},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4673987030982971},{"id":"https://openalex.org/keywords/multiplicative-function","display_name":"Multiplicative function","score":0.42960861325263977},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.361435204744339},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.35868358612060547},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3447783887386322},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.31454670429229736},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3059842586517334},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.25961732864379883},{"id":"https://openalex.org/keywords/mathematical-analysis","display_name":"Mathematical analysis","score":0.21128791570663452},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1904621422290802},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17713722586631775}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6562831401824951},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.49557268619537354},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4673987030982971},{"id":"https://openalex.org/C42747912","wikidata":"https://www.wikidata.org/wiki/Q1048447","display_name":"Multiplicative function","level":2,"score":0.42960861325263977},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.361435204744339},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.35868358612060547},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3447783887386322},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.31454670429229736},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3059842586517334},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.25961732864379883},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.21128791570663452},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1904621422290802},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17713722586631775},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2022.3181792","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3181792","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6600000262260437}],"awards":[{"id":"https://openalex.org/G303347447","display_name":null,"funder_award_id":"110-2622-8-A49-001-SB","funder_id":"https://openalex.org/F4320322108","funder_display_name":"Ministry of Science and Technology"},{"id":"https://openalex.org/G406370551","display_name":null,"funder_award_id":"110-2622-E-A49-006-CC1","funder_id":"https://openalex.org/F4320322108","funder_display_name":"Ministry of Science and Technology"},{"id":"https://openalex.org/G8236281629","display_name":null,"funder_award_id":"109-2221-E-009-095-MY3","funder_id":"https://openalex.org/F4320322108","funder_display_name":"Ministry of Science and Technology"},{"id":"https://openalex.org/G8822910352","display_name":null,"funder_award_id":"109-2221-E-009-044-MY3","funder_id":"https://openalex.org/F4320322108","funder_display_name":"Ministry of Science and Technology"}],"funders":[{"id":"https://openalex.org/F4320322108","display_name":"Ministry of Science and Technology","ror":"https://ror.org/032e49973"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1967266121","https://openalex.org/W2028130976","https://openalex.org/W2077272369","https://openalex.org/W2087465251","https://openalex.org/W2115067661","https://openalex.org/W2118243201","https://openalex.org/W2120462245","https://openalex.org/W2137003270","https://openalex.org/W2291071623","https://openalex.org/W2397666214","https://openalex.org/W2436977277","https://openalex.org/W2487025556","https://openalex.org/W2586029371","https://openalex.org/W2593423588","https://openalex.org/W2614394220","https://openalex.org/W2793869373","https://openalex.org/W3004899683","https://openalex.org/W3015893425","https://openalex.org/W3094152121","https://openalex.org/W3134318521","https://openalex.org/W3135212871"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W244742193","https://openalex.org/W3019706209"],"abstract_inverted_index":{"This":[0],"article":[1],"proposes":[2],"an":[3,101],"inverting":[4],"buck-boost":[5],"drive":[6],"(IBBD)":[7],"gallium":[8],"nitride":[9],"(GaN)":[10],"driver,":[11],"which":[12],"directly":[13],"drives":[14],"depletion-mode":[15],"GaN":[16,86],"(D-GaN)":[17],"metal\u2013insulator\u2013semiconductor":[18],"high-electron-mobility":[19],"transistor":[20],"(MIS-HEMT).":[21],"In":[22,144],"the":[23,39,55,73,79,85,111,119,146,166],"proposed":[24,163],"driver":[25],"fabricated":[26],"with":[27],"a":[28,95],"0.5-":[29],"<inline-formula":[30,40,63,130],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[31,41,64,131],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[32,42,65,132],"<tex-math":[33,43,66,133],"notation=\"LaTeX\">$\\mu":[34,67],"\\text{m}$":[35],"</tex-math></inline-formula>":[36,46,69,136],"CMOS":[37],"process,":[38],"notation=\"LaTeX\">$V_{\\mathrm":[44],"{th}}$":[45],"tracking":[47],"technique":[48],"can":[49,123,138],"reduce":[50,165],"switching":[51,121],"loss":[52],"and":[53,100,116,129,153,188,193],"minimize":[54],"leakage":[56],"current":[57,168],"of":[58,84,150],"D-GaN":[59],"MIS-HEMT":[60],"to":[61,92,126,164,169],"sub-1":[62],"\\text{A}$":[68],".":[70],"To":[71],"suppress":[72],"electromagnetic":[74],"interference":[75],"(EMI)":[76],"caused":[77],"by":[78],"ringing":[80],"voltage":[81,159],"at":[82,141],"drain":[83],"switch":[87],"when":[88],"reducing":[89],"from":[90],"22":[91],"1.9":[93],"V,":[94],"Miller":[96],"plateau":[97],"(MP)":[98],"detector":[99],"EMI":[102],"suppression":[103],"frequency":[104,122],"controller":[105],"(ESFC)":[106],"are":[107,162,191],"also":[108],"applied.":[109],"With":[110],"slew":[112],"rate":[113],"(SR)":[114],"control":[115],"fast-level":[117],"shifter,":[118],"maximum":[120],"reach":[124],"up":[125],"20":[127],"MHz,":[128],"notation=\"LaTeX\">$dV_{\\mathrm":[134],"{DS}}$":[135],"/dt":[137],"be":[139],"regulated":[140],"120":[142],"V/ns.":[143],"addition,":[145],"power":[147,156],"saving":[148],"mode":[149],"IBB":[151],"converter":[152],"accurate":[154],"ultralow":[155],"(ULP)":[157],"under":[158],"lockout":[160],"(UVLO)":[161],"quiescent":[167],"580":[170],"nA":[171],"during":[172],"standby":[173],"mode,":[174],"thereby":[175],"enhances":[176],"light":[177],"load":[178],"efficiency.":[179],"The":[180],"peak":[181],"efficiency":[182],"is":[183],"as":[184,186],"high":[185],"95.8%":[187],"chip":[189],"areas":[190],"5.1":[192],"6.6":[194],"mm2.":[195]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}