{"id":"https://openalex.org/W4212825335","doi":"https://doi.org/10.1109/jssc.2022.3142436","title":"2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory","display_name":"2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory","publication_year":2022,"publication_date":"2022-02-02","ids":{"openalex":"https://openalex.org/W4212825335","doi":"https://doi.org/10.1109/jssc.2022.3142436"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2022.3142436","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3142436","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5007930789","display_name":"Min-Woong Seo","orcid":"https://orcid.org/0000-0002-5819-1378"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Min-Woong Seo","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035334497","display_name":"Myonglae Chu","orcid":"https://orcid.org/0000-0002-2756-3976"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myunglae Chu","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063109559","display_name":"Hyun-Yong Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Yong Jung","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027072630","display_name":"Suksan Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suksan Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113900133","display_name":"Jiyoun Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jiyoun Song","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053482178","display_name":"Daehee Bae","orcid":"https://orcid.org/0000-0001-6535-8378"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Daehee Bae","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032099931","display_name":"Sanggwon Lee","orcid":"https://orcid.org/0000-0003-3693-473X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanggwon Lee","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066987872","display_name":"Junan Lee","orcid":"https://orcid.org/0000-0002-8959-3476"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junan Lee","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046858121","display_name":"Sung-Yong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Yong Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031007341","display_name":"Jongyeon Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jongyeon Lee","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100328552","display_name":"Minkyung Kim","orcid":"https://orcid.org/0000-0001-5229-4520"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minkyung Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060067812","display_name":"Gwi-Deok Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gwi-Deok Lee","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074671586","display_name":"Heesung Shim","orcid":"https://orcid.org/0000-0002-1468-8120"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Heesung Shim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015693312","display_name":"Changyong Um","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changyong Um","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014311160","display_name":"Changhwa Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhwa Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111472681","display_name":"In-Gyu Baek","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"In-Gyu Baek","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078042616","display_name":"Doowon Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doowon Kwon","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101935776","display_name":"Hongki Kim","orcid":"https://orcid.org/0009-0000-8662-8592"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongki Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035170303","display_name":"Hyuksoon Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyuksoon Choi","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112740213","display_name":"Jonghyun Go","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jonghyun Go","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102604026","display_name":"JungChak Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungchak Ahn","raw_affiliation_strings":["System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016864052","display_name":"Jaekyu Lee","orcid":"https://orcid.org/0000-0002-0574-5381"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Kyu Lee","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","System LSI, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"System LSI, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111755606","display_name":"Chang-Rok Moon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang-Rok Moon","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103702433","display_name":"Kyupil Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyupil Lee","raw_affiliation_strings":["Samsung Institute of Technology (SSIT), Samsung Electronics, Yongin-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Institute of Technology (SSIT), Samsung Electronics, Yongin-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013133451","display_name":"Hyoung-Sub Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyoung-Sub Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":25,"corresponding_author_ids":["https://openalex.org/A5007930789"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":4.1485,"has_fulltext":false,"cited_by_count":46,"citation_normalized_percentile":{"value":0.947164,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"57","issue":"4","first_page":"1125","last_page":"1137"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9922999739646912,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9916999936103821,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pixel","display_name":"Pixel","score":0.7298303246498108},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6829566955566406},{"id":"https://openalex.org/keywords/image-sensor","display_name":"Image sensor","score":0.6312285661697388},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5907713770866394},{"id":"https://openalex.org/keywords/dot-pitch","display_name":"Dot pitch","score":0.47354856133461},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.4684206247329712},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.46767979860305786},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4536941349506378},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41071683168411255},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3940315246582031},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3674048185348511},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.21942391991615295},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21613755822181702},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21508949995040894},{"id":"https://openalex.org/keywords/image","display_name":"Image (mathematics)","score":0.14946913719177246}],"concepts":[{"id":"https://openalex.org/C160633673","wikidata":"https://www.wikidata.org/wiki/Q355198","display_name":"Pixel","level":2,"score":0.7298303246498108},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6829566955566406},{"id":"https://openalex.org/C76935873","wikidata":"https://www.wikidata.org/wiki/Q209121","display_name":"Image sensor","level":2,"score":0.6312285661697388},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5907713770866394},{"id":"https://openalex.org/C179813606","wikidata":"https://www.wikidata.org/wiki/Q2032861","display_name":"Dot pitch","level":3,"score":0.47354856133461},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4684206247329712},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.46767979860305786},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4536941349506378},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41071683168411255},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3940315246582031},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3674048185348511},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.21942391991615295},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21613755822181702},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21508949995040894},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.14946913719177246}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2022.3142436","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2022.3142436","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W1576423603","https://openalex.org/W1975545060","https://openalex.org/W2011593284","https://openalex.org/W2031533823","https://openalex.org/W2040154542","https://openalex.org/W2098175786","https://openalex.org/W2104086223","https://openalex.org/W2108083714","https://openalex.org/W2115721817","https://openalex.org/W2136416972","https://openalex.org/W2144536291","https://openalex.org/W2526894178","https://openalex.org/W2571040814","https://openalex.org/W2593197747","https://openalex.org/W2769042000","https://openalex.org/W2788231037","https://openalex.org/W2791908352","https://openalex.org/W2891254971","https://openalex.org/W2914578648","https://openalex.org/W2958690781","https://openalex.org/W3015439375","https://openalex.org/W3015900978","https://openalex.org/W3139408821","https://openalex.org/W3185169430","https://openalex.org/W4226475633","https://openalex.org/W6724457789","https://openalex.org/W6749709790","https://openalex.org/W6921499480"],"related_works":["https://openalex.org/W2140607147","https://openalex.org/W2022123780","https://openalex.org/W2349576212","https://openalex.org/W4384282188","https://openalex.org/W2069998638","https://openalex.org/W1981776476","https://openalex.org/W2352535872","https://openalex.org/W2382967348","https://openalex.org/W2107073676","https://openalex.org/W4255753471"],"abstract_inverted_index":{"This":[0,174],"article":[1],"presents":[2],"a":[3,7,10,44,51,66,72,82,88,132,149],"low":[4],"random":[5,25],"noise,":[6],"low-power,":[8],"and":[9,93,126,148,196,209],"high-speed":[11,83],"2-mega":[12],"pixels":[13],"(Mp)":[14],"global-shutter":[15],"(GS)-type":[16],"CMOS":[17],"image":[18,39,53],"sensor":[19,78],"(CIS)":[20],"using":[21,144],"an":[22,94],"advanced":[23],"dynamic":[24],"access":[26],"memory":[27],"(DRAM)":[28],"technology.":[29],"GS":[30,68,84],"CIS":[31,48,86],"is":[32,81,142],"one":[33],"of":[34,101,152,202],"the":[35,60,102,159],"alternatives":[36],"to":[37,155,178],"solve":[38],"distortion":[40],"issues":[41],"caused":[42],"by":[43,59],"conventional":[45],"rolling-shutter":[46],"(RS)":[47],"operation,":[49],"since":[50],"2-D":[52],"data":[54],"can":[55,105],"be":[56,106,156],"simultaneously":[57],"sampled":[58],"in-pixel":[61,95],"analog":[62,190],"memory.":[63,97],"To":[64],"achieve":[65],"high-performance":[67],"CIS,":[69],"we":[70],"proposed":[71,103,185],"novel":[73],"architecture":[74],"for":[75,140,162,198,212],"digital":[76,96],"pixel":[77,161,168],"(DPS)":[79],"which":[80],"operation":[85,139],"with":[87,115,131,187],"pixel-wise":[89],"analog-to-digital":[90],"converter":[91],"(ADC)":[92],"The":[98,184],"major":[99],"technologies":[100],"DPS":[104,186],"summarized":[107],"as":[108],"follows:":[109],"1)":[110],"two":[111,145,170],"large":[112,150],"coupling":[113],"capacitors":[114],"mature":[116],"DRAM":[117,146],"technology;":[118],"2)":[119],"extremely":[120,199],"narrow":[121],"pitch":[122],"Cu-to-Cu":[123],"(C2C)":[124],"bond;":[125],"3)":[127],"finally":[128],"low-powered":[129],"ADC":[130,141],"near":[133],"sub-threshold":[134],"operation.":[135],"A":[136],"perfect":[137],"auto-zero":[138],"implemented":[143],"capacitors,":[147],"number":[151],"transistors":[153],"have":[154],"integrated":[157],"in":[158],"single":[160],"realizing":[163],"pixel-level":[164],"ADC.":[165],"Thus,":[166],"each":[167],"has":[169,192],"fine-pitch":[171],"C2C":[172],"interconnections.":[173],"makes":[175],"it":[176],"possible":[177],"realize":[179],"wafer-level":[180],"stacked":[181],"unit":[182],"pixel.":[183],"low-power":[188],"consuming":[189],"circuits":[191],"been":[193],"successfully":[194],"designed":[195],"developed":[197],"fast-readout":[200],"speed":[201],"max.":[203],"1200":[204],"frames":[205],"per":[206],"second":[207],"(fps)":[208],"high":[210],"sensitivity":[211],"low-illumination":[213],"conditions.":[214]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":19},{"year":2024,"cited_by_count":13},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":5}],"updated_date":"2026-03-12T08:34:05.389933","created_date":"2025-10-10T00:00:00"}