{"id":"https://openalex.org/W3043281468","doi":"https://doi.org/10.1109/jssc.2020.3005818","title":"300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers","display_name":"300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers","publication_year":2020,"publication_date":"2020-07-13","ids":{"openalex":"https://openalex.org/W3043281468","doi":"https://doi.org/10.1109/jssc.2020.3005818","mag":"3043281468"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2020.3005818","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2020.3005818","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087581054","display_name":"Hiroshi Hamada","orcid":"https://orcid.org/0000-0002-8637-1843"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Hiroshi Hamada","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042959102","display_name":"Takuya Tsutsumi","orcid":"https://orcid.org/0000-0002-5078-606X"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuya Tsutsumi","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004464722","display_name":"Hideaki Matsuzaki","orcid":"https://orcid.org/0000-0002-7027-8919"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideaki Matsuzaki","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048172594","display_name":"Takuya Fujimura","orcid":"https://orcid.org/0000-0003-1726-8372"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuya Fujimura","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082456070","display_name":"Ibrahim Abdo","orcid":"https://orcid.org/0000-0001-6024-8540"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ibrahim Abdo","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028333708","display_name":"Atsushi Shirane","orcid":"https://orcid.org/0000-0001-8172-4323"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsushi Shirane","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064086312","display_name":"Kenichi Okada","orcid":"https://orcid.org/0000-0002-1082-7672"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenichi Okada","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Ookayama Campus, Tokyo, Japan","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057345562","display_name":"Go Itami","orcid":"https://orcid.org/0000-0001-7660-8360"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Go Itami","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090103689","display_name":"Ho-Jin Song","orcid":"https://orcid.org/0000-0002-3007-2107"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]},{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP","KR"],"is_corresponding":false,"raw_author_name":"Ho-Jin Song","raw_affiliation_strings":["Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea","NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea","institution_ids":["https://openalex.org/I123900574"]},{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024292962","display_name":"Hiroki Sugiyama","orcid":"https://orcid.org/0000-0002-6301-857X"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroki Sugiyama","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015690849","display_name":"Hideyuki Nosaka","orcid":"https://orcid.org/0000-0002-3994-0118"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideyuki Nosaka","raw_affiliation_strings":["NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Laboratories, NTT Corporation, Atsugi, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5087581054"],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":null,"apc_paid":null,"fwci":10.4965,"has_fulltext":false,"cited_by_count":188,"citation_normalized_percentile":{"value":0.98872639,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"55","issue":"9","first_page":"2316","last_page":"2335"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10936","display_name":"Millimeter-Wave Propagation and Modeling","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6964623928070068},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5764369368553162},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5549559593200684},{"id":"https://openalex.org/keywords/transmitter","display_name":"Transmitter","score":0.5008518695831299},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.47269347310066223},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.45579230785369873},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.42802512645721436},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42385134100914},{"id":"https://openalex.org/keywords/transceiver","display_name":"Transceiver","score":0.4155791997909546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4098399877548218},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3350484371185303},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2889763116836548},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.13036766648292542},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09290528297424316}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6964623928070068},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5764369368553162},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5549559593200684},{"id":"https://openalex.org/C47798520","wikidata":"https://www.wikidata.org/wiki/Q190157","display_name":"Transmitter","level":3,"score":0.5008518695831299},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.47269347310066223},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.45579230785369873},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.42802512645721436},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42385134100914},{"id":"https://openalex.org/C7720470","wikidata":"https://www.wikidata.org/wiki/Q954187","display_name":"Transceiver","level":3,"score":0.4155791997909546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4098399877548218},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3350484371185303},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2889763116836548},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.13036766648292542},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09290528297424316},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/jssc.2020.3005818","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2020.3005818","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},{"id":"pmh:oai:oasis.postech.ac.kr:2014.oak/107841","is_oa":false,"landing_page_url":"https://oasis.postech.ac.kr/handle/2014.oak/107841","pdf_url":null,"source":{"id":"https://openalex.org/S4306401965","display_name":"Open Access System for Information Sharing (Pohang University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I123900574","host_organization_name":"Pohang University of Science and Technology","host_organization_lineage":["https://openalex.org/I123900574"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:t2r2.star.titech.ac.jp:50560489","is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100841929","pdf_url":null,"source":{"id":"https://openalex.org/S4377196385","display_name":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I114531698","host_organization_name":"Tokyo Institute of Technology","host_organization_lineage":["https://openalex.org/I114531698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320325628","display_name":"Ministry of Internal Affairs and Communications","ror":"https://ror.org/00vs1pz50"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":43,"referenced_works":["https://openalex.org/W1567570307","https://openalex.org/W1602297169","https://openalex.org/W1632299374","https://openalex.org/W1894327099","https://openalex.org/W1977434328","https://openalex.org/W1996365372","https://openalex.org/W2000557701","https://openalex.org/W2006534047","https://openalex.org/W2028373504","https://openalex.org/W2035326296","https://openalex.org/W2054692642","https://openalex.org/W2084365675","https://openalex.org/W2132411743","https://openalex.org/W2161624559","https://openalex.org/W2163479304","https://openalex.org/W2171984001","https://openalex.org/W2241827709","https://openalex.org/W2264228862","https://openalex.org/W2318905378","https://openalex.org/W2323504825","https://openalex.org/W2515947892","https://openalex.org/W2516209695","https://openalex.org/W2560346344","https://openalex.org/W2762158016","https://openalex.org/W2762849288","https://openalex.org/W2793607050","https://openalex.org/W2793633707","https://openalex.org/W2806078149","https://openalex.org/W2808043165","https://openalex.org/W2809813402","https://openalex.org/W2883271860","https://openalex.org/W2886438597","https://openalex.org/W2903531964","https://openalex.org/W2918826880","https://openalex.org/W2959445744","https://openalex.org/W2965898247","https://openalex.org/W2970628702","https://openalex.org/W2971538519","https://openalex.org/W2980769293","https://openalex.org/W2981823839","https://openalex.org/W3003619183","https://openalex.org/W3005579525","https://openalex.org/W6745167143"],"related_works":["https://openalex.org/W1996405237","https://openalex.org/W3209221379","https://openalex.org/W2156294920","https://openalex.org/W3193712762","https://openalex.org/W2155700382","https://openalex.org/W4287025514","https://openalex.org/W4386535175","https://openalex.org/W2738144851","https://openalex.org/W3145027672","https://openalex.org/W4235509732"],"abstract_inverted_index":{"We":[0],"developed":[1],"a":[2,45,97,203,209],"300-GHz-band":[3],"120-Gb/s":[4],"wireless":[5],"transceiver":[6],"front-ends":[7],"(TRX)":[8],"using":[9,44,56,175],"our":[10],"in-house":[11],"InP-based":[12],"high-electron-mobility-transistor":[13],"(InP-HEMT)":[14],"technology":[15],"for":[16,48,117],"beyond-5G.":[17],"The":[18,92,113,153,169,191],"TRX":[19,192],"is":[20,78,159,166],"composed":[21],"of":[22,67,89,103,156,202,212],"the":[23,57,63,68,72,82,87,90,123,138,145,148,163,176,184,189,199],"RF":[24,52,94,149],"power":[25,187],"amplifiers":[26],"(PAs),":[27],"mixers,":[28],"and":[29,71,84,120,125,150,162],"local":[30],"oscillation":[31],"(LO)":[32],"PAs":[33,53,95,171],"which":[34],"are":[35,54,115,129,172],"all":[36],"packaged":[37],"in":[38,122],"individual":[39],"waveguide":[40],"(WG)":[41],"modules":[42],"by":[43,143],"ridge":[46],"coupler":[47],"low-loss":[49],"WG-to-IC":[50],"transition.":[51],"designed":[55,130,174],"low-impedance":[58],"inter-stage-matching":[59],"technique":[60,77,178],"to":[61,80,85,110,131,188],"reduce":[62],"inter-stage":[64],"matching":[65],"loss":[66],"amplifier":[69],"stages,":[70],"back-side":[73],"DC":[74],"line":[75],"(BDCL)":[76],"used":[79,116],"simplify":[81],"layout":[83],"improve":[86],"gain":[88,135],"PAs.":[91],"fabricated":[93],"show":[96],"high":[98,133],"output":[99],"1-dB":[100],"compression":[101],"point":[102],"more":[104],"than":[105],"6":[106],"dBm":[107],"from":[108],"278":[109],"302":[111],"GHz.":[112,168],"mixers":[114,128],"both":[118],"up-":[119],"down-conversion":[121],"transmitter":[124],"receiver.":[126],"These":[127],"have":[132],"conversion":[134],"(CG)":[136],"over":[137,208],"wideband":[139],"even":[140],"after":[141],"packaging":[142],"enhancing":[144],"isolation":[146],"between":[147],"IF":[151],"ports.":[152],"measured":[154],"CG":[155],"mixer":[157],"module":[158],"-15":[160],"dB,":[161],"3-dB":[164],"IF-bandwidth":[165],"32":[167],"LO":[170,186],"also":[173],"BDCL":[177],"so":[179],"that":[180],"they":[181],"can":[182],"supply":[183],"required":[185],"mixers.":[190],"with":[193],"these":[194],"InP":[195],"building":[196],"blocks":[197],"enables":[198],"data":[200],"transmission":[201],"120":[204],"Gb/s":[205],"16QAM":[206],"signal":[207],"link":[210],"distance":[211],"9.8":[213],"m.":[214]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":41},{"year":2024,"cited_by_count":44},{"year":2023,"cited_by_count":27},{"year":2022,"cited_by_count":36},{"year":2021,"cited_by_count":34},{"year":2020,"cited_by_count":4}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}