{"id":"https://openalex.org/W2989763669","doi":"https://doi.org/10.1109/jssc.2019.2952132","title":"A Sub-fs-FoM Digital LDO Using PMOS and NMOS Arrays With Fully Integrated 7.2-pF Total Capacitance","display_name":"A Sub-fs-FoM Digital LDO Using PMOS and NMOS Arrays With Fully Integrated 7.2-pF Total Capacitance","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2989763669","doi":"https://doi.org/10.1109/jssc.2019.2952132","mag":"2989763669"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2019.2952132","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2019.2952132","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070325110","display_name":"Junyoung Maeng","orcid":"https://orcid.org/0000-0003-2523-1211"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Junyoung Maeng","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059557953","display_name":"Minseob Shim","orcid":"https://orcid.org/0000-0001-6165-0320"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I4210131650","display_name":"Korea Electronics Technology Institute","ror":"https://ror.org/039k6f508","country_code":"KR","type":"facility","lineage":["https://openalex.org/I2801339556","https://openalex.org/I4210089395","https://openalex.org/I4210131650"]},{"id":"https://openalex.org/I196471810","display_name":"Korea Electrotechnology Research Institute","ror":"https://ror.org/03ctacd45","country_code":"KR","type":"funder","lineage":["https://openalex.org/I196471810"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minseob Shim","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea","Korea Electronics Technology Institute, Seongnam, South Korea","Korea Electrotechnology Research Institute, Changwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":"Korea Electronics Technology Institute, Seongnam, South Korea","institution_ids":["https://openalex.org/I4210131650"]},{"raw_affiliation_string":"Korea Electrotechnology Research Institute, Changwon, South Korea","institution_ids":["https://openalex.org/I196471810"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069663548","display_name":"Junwon Jeong","orcid":"https://orcid.org/0000-0001-7999-3305"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]},{"id":"https://openalex.org/I196471810","display_name":"Korea Electrotechnology Research Institute","ror":"https://ror.org/03ctacd45","country_code":"KR","type":"funder","lineage":["https://openalex.org/I196471810"]},{"id":"https://openalex.org/I4210131650","display_name":"Korea Electronics Technology Institute","ror":"https://ror.org/039k6f508","country_code":"KR","type":"facility","lineage":["https://openalex.org/I2801339556","https://openalex.org/I4210089395","https://openalex.org/I4210131650"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junwon Jeong","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea","Korea Electronics Technology Institute, Seongnam, South Korea","Korea Electrotechnology Research Institute, Changwon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]},{"raw_affiliation_string":"Korea Electronics Technology Institute, Seongnam, South Korea","institution_ids":["https://openalex.org/I4210131650"]},{"raw_affiliation_string":"Korea Electrotechnology Research Institute, Changwon, South Korea","institution_ids":["https://openalex.org/I196471810"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101727097","display_name":"Inho Park","orcid":"https://orcid.org/0000-0003-2067-0557"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Inho Park","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101818480","display_name":"Yunsoo Park","orcid":"https://orcid.org/0000-0001-6564-4497"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yunsoo Park","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100777100","display_name":"Chulwoo Kim","orcid":"https://orcid.org/0000-0003-4379-7905"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chulwoo Kim","raw_affiliation_strings":["Department of Electrical Engineering, Korea University, Seoul, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5070325110"],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":null,"apc_paid":null,"fwci":0.5869,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.65684532,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"13"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.9461839199066162},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8577587604522705},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.592125415802002},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5910676121711731},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5511861443519592},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5482634902000427},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5336243510246277},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5005903244018555},{"id":"https://openalex.org/keywords/voltage-droop","display_name":"Voltage droop","score":0.451160728931427},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.42951512336730957},{"id":"https://openalex.org/keywords/voltage-doubler","display_name":"Voltage doubler","score":0.41801488399505615},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.41647329926490784},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34796369075775146},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.24782899022102356},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2408527135848999},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22214460372924805},{"id":"https://openalex.org/keywords/voltage-regulator","display_name":"Voltage regulator","score":0.1959545612335205}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.9461839199066162},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8577587604522705},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.592125415802002},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5910676121711731},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5511861443519592},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5482634902000427},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5336243510246277},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5005903244018555},{"id":"https://openalex.org/C40760162","wikidata":"https://www.wikidata.org/wiki/Q10920295","display_name":"Voltage droop","level":4,"score":0.451160728931427},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.42951512336730957},{"id":"https://openalex.org/C106224450","wikidata":"https://www.wikidata.org/wiki/Q117903","display_name":"Voltage doubler","level":5,"score":0.41801488399505615},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41647329926490784},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34796369075775146},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.24782899022102356},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2408527135848999},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22214460372924805},{"id":"https://openalex.org/C110706871","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Voltage regulator","level":3,"score":0.1959545612335205},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2019.2952132","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2019.2952132","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7300000190734863,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1985042756","https://openalex.org/W2031283182","https://openalex.org/W2054989520","https://openalex.org/W2057529353","https://openalex.org/W2064956733","https://openalex.org/W2068287549","https://openalex.org/W2069816125","https://openalex.org/W2093142101","https://openalex.org/W2100151841","https://openalex.org/W2117615344","https://openalex.org/W2121364635","https://openalex.org/W2124907472","https://openalex.org/W2169424209","https://openalex.org/W2292345480","https://openalex.org/W2303319543","https://openalex.org/W2343518286","https://openalex.org/W2344336685","https://openalex.org/W2534790438","https://openalex.org/W2551461123","https://openalex.org/W2578031392","https://openalex.org/W2625638002","https://openalex.org/W2760813205","https://openalex.org/W2769693554","https://openalex.org/W2789664164","https://openalex.org/W2790621319","https://openalex.org/W2791562781","https://openalex.org/W2792953945","https://openalex.org/W2794387926","https://openalex.org/W2805759141","https://openalex.org/W2808559067","https://openalex.org/W2894668784","https://openalex.org/W2921226981","https://openalex.org/W4246802415","https://openalex.org/W6667784510","https://openalex.org/W6748369327","https://openalex.org/W6749402870","https://openalex.org/W6760232306"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W2104885411","https://openalex.org/W2160067645","https://openalex.org/W2023334077","https://openalex.org/W2005494397","https://openalex.org/W2339836056"],"abstract_inverted_index":{"A":[0],"digital":[1],"low-dropout":[2],"(DLDO)":[3],"regulator":[4],"using":[5,142],"p-type":[6],"MOS":[7,11],"(PMOS)":[8],"and":[9,29,62,66,71,124,133,147],"n-type":[10],"(NMOS)":[12],"switches":[13,48],"is":[14,105,111,140,154],"proposed":[15,42,87,138],"to":[16,49,101,107,130],"achieve":[17],"a":[18,31,38,143,149],"sub-fs":[19],"speed":[20,151],"figure-of-merit":[21],"(FoM)":[22],"by":[23],"reducing":[24],"the":[25,45,53,58,64,83,86,96,120,158],"total":[26,97],"capacitance":[27,98],"(CTOT)":[28],"accomplishing":[30],"comparable":[32],"output":[33],"voltage":[34,88,122],"droop":[35],"(\u0394VOUT)":[36],"during":[37,75],"load":[39,78,125],"transition.":[40,79],"The":[41,137],"DLDO":[43,100,139],"uses":[44],"segmented":[46],"PMOS":[47],"fully":[50],"turn":[51],"on":[52],"NMOS":[54,60,103],"array,":[55],"which":[56,110],"strengthens":[57],"intrinsic":[59],"loop":[61],"maintains":[63],"undershoot":[65],"overshoot":[67],"voltages":[68],"of":[69,85,99,116],"88":[70],"42":[72],"mV,":[73],"respectively,":[74],"an":[76],"88.4-mA":[77],"In":[80],"addition,":[81],"with":[82],"aid":[84],"doubler":[89],"(VD)-based":[90],"periodically":[91],"refreshed":[92],"level":[93],"shifter":[94],"(PRLS),":[95],"drive":[102],"array":[104],"reduced":[106],"7.2":[108],"pF,":[109],"3.3\u00d7":[112],"smaller":[113,156],"than":[114,157],"that":[115,153],"previous":[117],"work,":[118],"extending":[119],"input":[121],"(VIN)":[123],"current":[126],"(ILOAD)":[127],"ranges":[128],"up":[129],"0.9":[131],"V":[132],"140":[134],"mA,":[135],"respectively.":[136],"fabricated":[141],"28-nm":[144],"CMOS":[145],"process":[146],"achieves":[148],"0.12-fs":[150],"FoM":[152],"42.5\u00d7":[155],"state-of-the-art":[159],"designs.":[160]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}