{"id":"https://openalex.org/W2938204602","doi":"https://doi.org/10.1109/jssc.2019.2905343","title":"An 8T SRAM With On-Chip Dynamic Reliability Management and Two-Phase Write Operation in 28-nm FDSOI","display_name":"An 8T SRAM With On-Chip Dynamic Reliability Management and Two-Phase Write Operation in 28-nm FDSOI","publication_year":2019,"publication_date":"2019-04-16","ids":{"openalex":"https://openalex.org/W2938204602","doi":"https://doi.org/10.1109/jssc.2019.2905343","mag":"2938204602"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2019.2905343","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2019.2905343","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071947457","display_name":"Zhao Chuan Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4210136567","display_name":"GlobalFoundries (Singapore)","ror":"https://ror.org/03whnfd14","country_code":"SG","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210136567"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Zhao Chuan Lee","raw_affiliation_strings":["GLOBALFOUNDRIES Singapore Pte., Ltd., Singapore"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES Singapore Pte., Ltd., Singapore","institution_ids":["https://openalex.org/I4210136567"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110453343","display_name":"M. Sultan M. Siddiqui","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Sultan M. Siddiqui","raw_affiliation_strings":["Synopsys, Noida, India"],"affiliations":[{"raw_affiliation_string":"Synopsys, Noida, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112074990","display_name":"Zhi\u2010Hui Kong","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Zhi-Hui Kong","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5076628109","display_name":"Tony Tae-Hyoung Kim","orcid":"https://orcid.org/0000-0002-1779-1799"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tony Tae-Hyoung Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5071947457"],"corresponding_institution_ids":["https://openalex.org/I4210136567"],"apc_list":null,"apc_paid":null,"fwci":0.1192,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.43622949,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"54","issue":"7","first_page":"2091","last_page":"2101"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9137157201766968},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6816349029541016},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5941826701164246},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5002844333648682},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.48013755679130554},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.453241765499115},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.44763949513435364},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44061946868896484},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42791447043418884},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.368761271238327},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3628111183643341},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3627774119377136},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3569287657737732},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3192307949066162},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.29773828387260437},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2855742573738098},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2574447989463806},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.17926368117332458},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.15993696451187134},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07372957468032837}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9137157201766968},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6816349029541016},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5941826701164246},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5002844333648682},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.48013755679130554},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.453241765499115},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.44763949513435364},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44061946868896484},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42791447043418884},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.368761271238327},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3628111183643341},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3627774119377136},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3569287657737732},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3192307949066162},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.29773828387260437},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2855742573738098},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2574447989463806},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.17926368117332458},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.15993696451187134},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07372957468032837},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2019.2905343","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2019.2905343","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5699999928474426}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1600691640","https://openalex.org/W1965229716","https://openalex.org/W1970023301","https://openalex.org/W1998246226","https://openalex.org/W2007609366","https://openalex.org/W2069362588","https://openalex.org/W2081936003","https://openalex.org/W2102785080","https://openalex.org/W2108957996","https://openalex.org/W2122507955","https://openalex.org/W2137459077","https://openalex.org/W2144154842","https://openalex.org/W2345094463","https://openalex.org/W2537484341","https://openalex.org/W2558474427","https://openalex.org/W2750392872","https://openalex.org/W2790480006","https://openalex.org/W2899389806","https://openalex.org/W4285719527","https://openalex.org/W6652425211"],"related_works":["https://openalex.org/W2042526628","https://openalex.org/W2944990515","https://openalex.org/W3150866391","https://openalex.org/W2942040471","https://openalex.org/W2028220610","https://openalex.org/W2088008649","https://openalex.org/W2112214579","https://openalex.org/W2166033074","https://openalex.org/W2036808971","https://openalex.org/W2573726612"],"abstract_inverted_index":{"Bias":[0],"temperature":[1],"instability":[2],"(BTI)":[3],"degradation":[4,52,74],"poses":[5],"increasingly":[6],"critical":[7],"lifetime":[8],"reliability":[9,37,57],"design":[10],"challenges":[11],"in":[12,53,75],"static":[13],"random":[14],"access":[15],"memory":[16],"(SRAM),":[17],"as":[18],"fabrication":[19],"technology":[20,134],"marches":[21],"toward":[22],"a":[23,79,121,126,155],"very":[24],"deep":[25],"nanometer":[26],"regime.":[27],"This":[28],"paper":[29],"presents":[30],"circuit":[31,116],"techniques":[32],"that":[33,137],"enable":[34],"on-chip":[35],"dynamic":[36,56],"management,":[38],"which":[39],"intelligently":[40],"monitors":[41],"and":[42,85,159],"mitigates":[43],"the":[44,62,72,87,107,138,151],"half-selected":[45,108,139],"cell":[46,109,140],"stability":[47,83,110,141],"failure":[48,142],"due":[49],"to":[50,105,148],"BTI":[51,73,112],"SRAM.":[54],"The":[55,96],"management":[58],"is":[59,100,143],"achieved":[60],"through":[61,78],"automated":[63],"BTI-aware":[64,82],"write":[65,93],"word-line":[66],"(WWL)":[67],"control,":[68],"whereby":[69],"it":[70],"detects":[71],"SRAM":[76,123],"cells":[77],"replica":[80],"row-based":[81],"monitor":[84],"adjusts":[86],"WWL":[88,97],"voltage":[89,98],"level":[90,99],"with":[91,111,150],"two-phase":[92],"operation":[94],"(TPWO).":[95],"divided":[101],"into":[102],"two":[103],"phases":[104],"maintain":[106],"without":[113],"compromising":[114],"other":[115],"parameters.":[117],"Silicon":[118],"validation":[119],"of":[120],"16-kb":[122],"based":[124],"on":[125,131],"28-nm":[127],"fully":[128],"depleted":[129],"silicon":[130],"insulator":[132],"(FDSOI)":[133],"successfully":[135],"demonstrates":[136],"eliminated":[144],"from":[145],"57.13%":[146],"down":[147],"0%":[149],"proposed":[152],"approach":[153],"at":[154],"marginal":[156],"3.42%":[157],"power":[158],"10%":[160],"area":[161],"overheads.":[162]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}