{"id":"https://openalex.org/W2893484398","doi":"https://doi.org/10.1109/jssc.2018.2863946","title":"A 0.4-V, 0.138-fJ/Cycle Single-Phase-Clocking Redundant-Transition-Free 24T Flip-Flop With Change-Sensing Scheme in 40-nm CMOS","display_name":"A 0.4-V, 0.138-fJ/Cycle Single-Phase-Clocking Redundant-Transition-Free 24T Flip-Flop With Change-Sensing Scheme in 40-nm CMOS","publication_year":2018,"publication_date":"2018-08-21","ids":{"openalex":"https://openalex.org/W2893484398","doi":"https://doi.org/10.1109/jssc.2018.2863946","mag":"2893484398"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2018.2863946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2018.2863946","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045154871","display_name":"Van Loi Le","orcid":"https://orcid.org/0000-0002-8500-3176"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Van Loi Le","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023292781","display_name":"Juhui Li","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Juhui Li","raw_affiliation_strings":["Nationz Innovation Technologies, Singapore"],"affiliations":[{"raw_affiliation_string":"Nationz Innovation Technologies, Singapore","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049492532","display_name":"Alan Chang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Alan Chang","raw_affiliation_strings":["Nationz Innovation Technologies, Singapore"],"affiliations":[{"raw_affiliation_string":"Nationz Innovation Technologies, Singapore","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5076628109","display_name":"Tony Tae-Hyoung Kim","orcid":"https://orcid.org/0000-0002-1779-1799"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tony Tae-Hyoung Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5045154871"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":1.1709,"has_fulltext":false,"cited_by_count":42,"citation_normalized_percentile":{"value":0.80265561,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"53","issue":"10","first_page":"2806","last_page":"2817"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flip-flop","display_name":"Flip-flop","score":0.8905552625656128},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7219754457473755},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.6851937770843506},{"id":"https://openalex.org/keywords/transmission-gate","display_name":"Transmission gate","score":0.6107720136642456},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5349456071853638},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5182752013206482},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5068245530128479},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5004684925079346},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.47404953837394714},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4192638397216797},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.393292635679245},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3241332471370697},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17464247345924377},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.11308026313781738}],"concepts":[{"id":"https://openalex.org/C2781007278","wikidata":"https://www.wikidata.org/wiki/Q183406","display_name":"Flip-flop","level":3,"score":0.8905552625656128},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7219754457473755},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.6851937770843506},{"id":"https://openalex.org/C2780949067","wikidata":"https://www.wikidata.org/wiki/Q1136752","display_name":"Transmission gate","level":4,"score":0.6107720136642456},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5349456071853638},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5182752013206482},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5068245530128479},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5004684925079346},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.47404953837394714},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4192638397216797},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.393292635679245},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3241332471370697},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17464247345924377},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.11308026313781738},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/jssc.2018.2863946","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2018.2863946","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/145239","is_oa":false,"landing_page_url":"https://hdl.handle.net/10356/145239","pdf_url":null,"source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1899064893","https://openalex.org/W1969164955","https://openalex.org/W1995665089","https://openalex.org/W2044845929","https://openalex.org/W2047694997","https://openalex.org/W2056378213","https://openalex.org/W2108523123","https://openalex.org/W2109195618","https://openalex.org/W2113735631","https://openalex.org/W2124460294","https://openalex.org/W2140066229","https://openalex.org/W2140480749","https://openalex.org/W2141881829","https://openalex.org/W2143890803","https://openalex.org/W2145876393","https://openalex.org/W2151254061","https://openalex.org/W2161000806","https://openalex.org/W2164002677","https://openalex.org/W2170265438","https://openalex.org/W2778020922","https://openalex.org/W3143828022","https://openalex.org/W4231252248","https://openalex.org/W4253764540","https://openalex.org/W6642646544","https://openalex.org/W6649082081","https://openalex.org/W6661394767","https://openalex.org/W6680717329","https://openalex.org/W6681381849","https://openalex.org/W6681475482","https://openalex.org/W6683296086","https://openalex.org/W6747198241"],"related_works":["https://openalex.org/W2797823235","https://openalex.org/W2360732944","https://openalex.org/W2120898945","https://openalex.org/W2611474147","https://openalex.org/W3111333564","https://openalex.org/W4313404246","https://openalex.org/W2371966460","https://openalex.org/W2075753352","https://openalex.org/W1808420522","https://openalex.org/W2778020922"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"extremely":[4],"low-voltage":[5],"and":[6,93,104,111,128],"low-power":[7],"single-phase-clocking":[8],"redundant-transition-free":[9],"flip-flop":[10],"(FF),":[11],"named":[12],"change-sensing":[13,20],"FF":[14,75],"(CSFF).":[15],"By":[16],"utilizing":[17],"a":[18,46],"local":[19],"scheme":[21],"for":[22],"eliminating":[23],"redundant":[24],"transitions":[25],"of":[26,88,122,132,142],"internal":[27],"clocked":[28],"nodes,":[29],"CSFF":[30,56,77,107,123],"does":[31],"not":[32],"consume":[33],"any":[34],"dynamic":[35],"power":[36,61,103],"when":[37],"there":[38],"is":[39,83],"no":[40],"data":[41,65],"activity.":[42,95],"Measurement":[43],"results":[44],"from":[45],"test":[47,116],"chip":[48,117],"fabricated":[49],"in":[50,102,137],"40-nm":[51],"CMOS":[52],"technology":[53],"show":[54],"that":[55,87],"saves":[57],"up":[58],"to":[59,71,98,125,135],"90%":[60],"dissipation":[62],"at":[63,90],"5%":[64],"activity":[66],"without":[67],"additional":[68],"transistors":[69],"compared":[70,134],"the":[72,99,129,138],"conventional":[73],"transmission-gate":[74],"(TGFF).":[76],"consumes":[78],"only":[79],"0.138":[80],"fJ/cycle,":[81],"which":[82],"84%":[84],"lower":[85],"than":[86],"TGFF,":[89],"0.4":[91],"V":[92,127],"10%":[94],"In":[96],"addition":[97],"significant":[100],"improvement":[101,131],"energy":[105],"efficiencies,":[106],"also":[108],"enhances":[109],"performance":[110],"minimum":[112],"operating":[113],"voltage.":[114],"The":[115],"measurement":[118],"demonstrates":[119],"successful":[120],"operations":[121],"down":[124],"0.19":[126],"delay":[130],"37%":[133],"TGFF":[136],"supply":[139],"voltage":[140],"range":[141],"0.4-1":[143],"V.":[144]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":10},{"year":2024,"cited_by_count":12},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2026-03-06T13:50:29.536080","created_date":"2025-10-10T00:00:00"}