{"id":"https://openalex.org/W2625828644","doi":"https://doi.org/10.1109/jssc.2017.2705659","title":"A Total-Power Radiometer Front End in a 0.25- $\\mu \\text{m}$ BiCMOS Technology With Low $1/{f}$ -Corner","display_name":"A Total-Power Radiometer Front End in a 0.25- $\\mu \\text{m}$ BiCMOS Technology With Low $1/{f}$ -Corner","publication_year":2017,"publication_date":"2017-06-12","ids":{"openalex":"https://openalex.org/W2625828644","doi":"https://doi.org/10.1109/jssc.2017.2705659","mag":"2625828644"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2017.2705659","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2017.2705659","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111718280","display_name":"Satoshi Malotaux","orcid":null},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":true,"raw_author_name":"Satoshi Malotaux","raw_affiliation_strings":["Delft University of Technology, Delft, CD, The Netherlands"],"affiliations":[{"raw_affiliation_string":"Delft University of Technology, Delft, CD, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038559388","display_name":"Masoud Babaie","orcid":"https://orcid.org/0000-0001-7635-5324"},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Masoud Babaie","raw_affiliation_strings":["Delft University of Technology, Delft, CD, The Netherlands"],"affiliations":[{"raw_affiliation_string":"Delft University of Technology, Delft, CD, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051627959","display_name":"Marco Spirito","orcid":"https://orcid.org/0000-0002-6708-4283"},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Marco Spirito","raw_affiliation_strings":["Delft University of Technology, Delft, CD, The Netherlands"],"affiliations":[{"raw_affiliation_string":"Delft University of Technology, Delft, CD, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5111718280"],"corresponding_institution_ids":["https://openalex.org/I98358874"],"apc_list":null,"apc_paid":null,"fwci":0.437,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.64907779,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"52","issue":"9","first_page":"2256","last_page":"2266"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6282421350479126},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.6244550347328186},{"id":"https://openalex.org/keywords/flicker-noise","display_name":"Flicker noise","score":0.6193363666534424},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5718898773193359},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5567980408668518},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.5315259099006653},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.5187987685203552},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.5095779895782471},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5089249610900879},{"id":"https://openalex.org/keywords/responsivity","display_name":"Responsivity","score":0.4981107711791992},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.48539766669273376},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.46577996015548706},{"id":"https://openalex.org/keywords/radiometer","display_name":"Radiometer","score":0.42183393239974976},{"id":"https://openalex.org/keywords/noise-equivalent-power","display_name":"Noise-equivalent power","score":0.41490280628204346},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.3846360445022583},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3659699261188507},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3658672571182251},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29776063561439514},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.26311081647872925},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.25215035676956177}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6282421350479126},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.6244550347328186},{"id":"https://openalex.org/C113873419","wikidata":"https://www.wikidata.org/wiki/Q1410810","display_name":"Flicker noise","level":5,"score":0.6193363666534424},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5718898773193359},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5567980408668518},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.5315259099006653},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.5187987685203552},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.5095779895782471},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5089249610900879},{"id":"https://openalex.org/C178889773","wikidata":"https://www.wikidata.org/wiki/Q7316011","display_name":"Responsivity","level":3,"score":0.4981107711791992},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.48539766669273376},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.46577996015548706},{"id":"https://openalex.org/C120189094","wikidata":"https://www.wikidata.org/wiki/Q850281","display_name":"Radiometer","level":2,"score":0.42183393239974976},{"id":"https://openalex.org/C123515950","wikidata":"https://www.wikidata.org/wiki/Q3257868","display_name":"Noise-equivalent power","level":4,"score":0.41490280628204346},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.3846360445022583},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3659699261188507},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3658672571182251},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29776063561439514},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.26311081647872925},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25215035676956177}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2017.2705659","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2017.2705659","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":44,"referenced_works":["https://openalex.org/W576455428","https://openalex.org/W1483241043","https://openalex.org/W1564201208","https://openalex.org/W1580739583","https://openalex.org/W1668308828","https://openalex.org/W1971682456","https://openalex.org/W1979829211","https://openalex.org/W1983030779","https://openalex.org/W1988263892","https://openalex.org/W1992275795","https://openalex.org/W1995905135","https://openalex.org/W2000257485","https://openalex.org/W2018629653","https://openalex.org/W2026460371","https://openalex.org/W2043989337","https://openalex.org/W2069955219","https://openalex.org/W2079431373","https://openalex.org/W2082533294","https://openalex.org/W2088860967","https://openalex.org/W2096660740","https://openalex.org/W2097919017","https://openalex.org/W2099467163","https://openalex.org/W2102096768","https://openalex.org/W2103616628","https://openalex.org/W2104311725","https://openalex.org/W2109164192","https://openalex.org/W2120989880","https://openalex.org/W2143158615","https://openalex.org/W2144439033","https://openalex.org/W2144546776","https://openalex.org/W2156392676","https://openalex.org/W2158425917","https://openalex.org/W2159913949","https://openalex.org/W2172131066","https://openalex.org/W2185622148","https://openalex.org/W2204031324","https://openalex.org/W2292365116","https://openalex.org/W2489793818","https://openalex.org/W2509207140","https://openalex.org/W2521188020","https://openalex.org/W3129621132","https://openalex.org/W3147616483","https://openalex.org/W6628770058","https://openalex.org/W6686790787"],"related_works":["https://openalex.org/W2027273479","https://openalex.org/W2553301178","https://openalex.org/W2004096053","https://openalex.org/W2006004658","https://openalex.org/W2763329043","https://openalex.org/W2012676843","https://openalex.org/W2169449836","https://openalex.org/W3132519836","https://openalex.org/W2900950421","https://openalex.org/W3211191194"],"abstract_inverted_index":{"This":[0,22],"paper":[1],"describes":[2],"the":[3,45,102,122,131],"analysis,":[4],"design,":[5],"and":[6,34,72,99],"characterization":[7],"of":[8,26],"a":[9,17,27,35,48,67,73,80,90,105,111,118,128],"high-sensitivity":[10],"millimeter-wave":[11],"total-power":[12],"radiometer":[13],"front-end":[14],"integrated":[15],"into":[16],"0.25-\u03bcm":[18],"SiGe:C":[19],"BiCMOS":[20],"technology.":[21],"prototype":[23,103],"is":[24,42,125,141],"composed":[25],"two":[28],"cascode":[29],"stage":[30],"low-noise":[31],"amplifier":[32],"(LNA)":[33],"voltage-driven":[36],"common-emitter":[37],"square-law":[38],"detector.":[39],"The":[40,62,136],"LNA":[41],"interfaced":[43],"to":[44,55],"detector":[46],"through":[47],"low":[49,68,74],"transformation":[50],"ratio":[51],"(i.e.,":[52],"high-impedance":[53],"node)":[54],"achieve":[56],"an":[57],"efficient":[58],"wideband":[59],"signal":[60],"transfer.":[61],"front":[63],"end":[64],"achieves":[65],"both":[66],"1/f":[69],"-noise":[70],"corner":[71],"noise-equivalent":[75],"power":[76,124],"(NEP)":[77],"by":[78],"combining":[79],"large":[81],"area,":[82],"high":[83],"resistive":[84],"value":[85],"load":[86],"resistor":[87],"together":[88],"with":[89,110,127],"minimum":[91],"size":[92],"heterojunction":[93],"bipolar":[94],"transistor.":[95],"At":[96],"56":[97],"GHz":[98],"optimum":[100],"bias,":[101],"provides":[104],"61-MV/W":[106],"responsivity":[107],"which":[108],"combined":[109],"194-nV/\u221aHz":[112],"white":[113],"noise":[114,134],"level":[115],"result":[116],"in":[117],"3.2-fW/\u221aHz":[119],"NEP":[120,139],"when":[121],"input":[123],"modulated":[126],"frequency":[129],"above":[130],"30-Hz":[132],"flicker":[133],"corner.":[135],"achieved":[137],"3-dB":[138],"bandwidth":[140],"6":[142],"GHz.":[143]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-03-27T14:29:43.386196","created_date":"2025-10-10T00:00:00"}