{"id":"https://openalex.org/W2607095088","doi":"https://doi.org/10.1109/jssc.2017.2686585","title":"A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power","display_name":"A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power","publication_year":2017,"publication_date":"2017-04-19","ids":{"openalex":"https://openalex.org/W2607095088","doi":"https://doi.org/10.1109/jssc.2017.2686585","mag":"2607095088"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2017.2686585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2017.2686585","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101938751","display_name":"Anirban Sarkar","orcid":"https://orcid.org/0000-0002-8535-3635"},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]},{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Anirban Sarkar","raw_affiliation_strings":["Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA","Samsung Semiconductor, Inc., San Jose, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA","institution_ids":["https://openalex.org/I137902535"]},{"raw_affiliation_string":"Samsung Semiconductor, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210101778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022624716","display_name":"Farshid Aryanfar","orcid":null},"institutions":[{"id":"https://openalex.org/I4210101778","display_name":"Samsung (United States)","ror":"https://ror.org/01bfbvm65","country_code":"US","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4210101778"]},{"id":"https://openalex.org/I4210133173","display_name":"Research!America (United States)","ror":"https://ror.org/044pgyv50","country_code":"US","type":"company","lineage":["https://openalex.org/I4210133173"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Farshid Aryanfar","raw_affiliation_strings":["Samsung Research America, Dallas, TX, USA","Straight Path Communications, Inc., Dallas, TX, USA"],"affiliations":[{"raw_affiliation_string":"Samsung Research America, Dallas, TX, USA","institution_ids":["https://openalex.org/I4210101778","https://openalex.org/I4210133173"]},{"raw_affiliation_string":"Straight Path Communications, Inc., Dallas, TX, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045127696","display_name":"Brian Floyd","orcid":"https://orcid.org/0000-0002-1124-2764"},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brian A. Floyd","raw_affiliation_strings":["Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA","institution_ids":["https://openalex.org/I137902535"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5101938751"],"corresponding_institution_ids":["https://openalex.org/I137902535","https://openalex.org/I4210101778"],"apc_list":null,"apc_paid":null,"fwci":3.2969,"has_fulltext":false,"cited_by_count":40,"citation_normalized_percentile":{"value":0.92634004,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"52","issue":"6","first_page":"1680","last_page":"1686"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9955000281333923,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6822711229324341},{"id":"https://openalex.org/keywords/intermodulation","display_name":"Intermodulation","score":0.5839016437530518},{"id":"https://openalex.org/keywords/transformer","display_name":"Transformer","score":0.544115424156189},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5121588706970215},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.5110656023025513},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.4894498884677887},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.4790290892124176},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.46854838728904724},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4653739631175995},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.4588824212551117},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.45724228024482727},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4440474510192871},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.4252403974533081},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.404127299785614},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.36159810423851013},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32737866044044495},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21654155850410461},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.20594626665115356},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.16522514820098877},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.1264040768146515}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6822711229324341},{"id":"https://openalex.org/C11773624","wikidata":"https://www.wikidata.org/wiki/Q2142232","display_name":"Intermodulation","level":4,"score":0.5839016437530518},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.544115424156189},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5121588706970215},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.5110656023025513},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4894498884677887},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.4790290892124176},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.46854838728904724},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4653739631175995},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.4588824212551117},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.45724228024482727},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4440474510192871},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.4252403974533081},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.404127299785614},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.36159810423851013},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32737866044044495},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21654155850410461},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20594626665115356},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.16522514820098877},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.1264040768146515}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2017.2686585","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2017.2686585","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1664499878","https://openalex.org/W1767983287","https://openalex.org/W1907235531","https://openalex.org/W1968422536","https://openalex.org/W1990312296","https://openalex.org/W1997922504","https://openalex.org/W2018130513","https://openalex.org/W2022054421","https://openalex.org/W2077103973","https://openalex.org/W2110708255","https://openalex.org/W2128335437","https://openalex.org/W2144361225","https://openalex.org/W2172778092","https://openalex.org/W2173935168","https://openalex.org/W2291984582","https://openalex.org/W2417776988","https://openalex.org/W2471705249","https://openalex.org/W2553079792","https://openalex.org/W2567298289","https://openalex.org/W2591882232","https://openalex.org/W6731534109"],"related_works":["https://openalex.org/W2108930055","https://openalex.org/W2018130513","https://openalex.org/W1522871913","https://openalex.org/W2382123973","https://openalex.org/W3010081994","https://openalex.org/W2515565458","https://openalex.org/W3009645265","https://openalex.org/W141098887","https://openalex.org/W1643489732","https://openalex.org/W4386805192"],"abstract_inverted_index":{"In":[0],"this":[1,100],"paper,":[2],"we":[3,53],"present":[4,54],"a":[5,33,49,55,91,108],"two-stage,":[6],"four-way":[7],"combined":[8],"power":[9,43,69],"amplifier":[10],"(PA)":[11],"operating":[12],"in":[13,18],"the":[14,27,46,59,62,68,72,87,105],"27-31-GHz":[15],"frequency":[16],"range":[17],"180-nm":[19],"SiGe":[20],"BiCMOS":[21],"technology.":[22],"The":[23,76,97],"output":[24,74,117],"network":[25],"of":[26,48,71,99,107],"PA":[28],"employs":[29],"spiral":[30],"transformers":[31],"and":[32,61,126,147],"microstrip":[34],"T-combiner":[35],"to":[36,66,140],"realize":[37],"low-loss":[38],"two-way":[39,41],"series,":[40,93],"parallel":[42,95],"combining.":[44],"With":[45],"help":[47],"lumped-element":[50],"transformer":[51,60],"model,":[52],"co-optimization":[56],"technique":[57,101],"for":[58,81],"adjoining":[63],"matching":[64],"components":[65],"minimize":[67],"loss":[70],"full":[73],"network.":[75],"design":[77],"methodology":[78],"is":[79,102],"applicable":[80],"realizing":[82],"an":[83],"arbitrary":[84],"impedance":[85],"at":[86,123,129,153],"device":[88],"plane":[89],"with":[90],"K-way":[92],"M-way":[94],"combiner.":[96],"efficacy":[98],"demonstrated":[103],"by":[104],"realization":[106],"PA,":[109],"which":[110],"has":[111],"27.6-dB":[112],"gain,":[113],"23.2-dBm,":[114],"1-dB":[115,124],"compressed":[116],"power,":[118],"32.7%":[119],"power-added":[120],"efficiency":[121],"(PAE)":[122],"compression,":[125],"15%":[127],"PAE":[128],"6-dB":[130,154],"back":[131,145,155],"off.":[132,156],"Linearity":[133],"measurements":[134],"show":[135],"less":[136,148],"than":[137,149],"4\u00b0":[138],"amplitude-modulation":[139],"phase-modulation":[141],"distortion":[142],"below":[143],"3-dB":[144],"off":[146],"-32-dBc":[150],"intermodulation":[151],"product":[152]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":11},{"year":2018,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
