{"id":"https://openalex.org/W2036961622","doi":"https://doi.org/10.1109/jssc.2015.2405932","title":"Highly Reliable Reference Bitline Bias Designs for 64 Mb and 128 Mb Chain FeRAMs","display_name":"Highly Reliable Reference Bitline Bias Designs for 64 Mb and 128 Mb Chain FeRAMs","publication_year":2015,"publication_date":"2015-03-12","ids":{"openalex":"https://openalex.org/W2036961622","doi":"https://doi.org/10.1109/jssc.2015.2405932","mag":"2036961622"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2015.2405932","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2015.2405932","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051964273","display_name":"Ryu Ogiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryu Ogiwara","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050556210","display_name":"D. Takashima","orcid":"https://orcid.org/0000-0002-8527-067X"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Daisaburo Takashima","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company Toshiba Corp., Sakae-ku, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company Toshiba Corp., Sakae-ku, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031669788","display_name":"Sumiko Doumae","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sumiko Doumae","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022556912","display_name":"S. Shiratake","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichiro Shiratake","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070601032","display_name":"Ryousuke Takizawa","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryousuke Takizawa","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027720906","display_name":"H. Shiga","orcid":"https://orcid.org/0009-0004-4626-3647"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidehiro Shiga","raw_affiliation_strings":["Center for Semiconductor Research & Development, Toshiba Corp","Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Semiconductor Research & Development, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Center for Semiconductor Research & Development, Semiconductor & Storage Products Company, Toshiba Corp","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":0.3209,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.65444656,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"50","issue":"5","first_page":"1324","last_page":"1331"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11222","display_name":"Magnetic Properties and Applications","score":0.9952999949455261,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.5833834409713745},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.5458167791366577},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.4902932941913605},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.4821286201477051},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47094854712486267},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.46478793025016785},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.44237983226776123},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43726658821105957},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.3798125386238098},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3746715784072876},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3648816645145416},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3625922203063965},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.34757065773010254},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.24574869871139526},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1675308644771576}],"concepts":[{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.5833834409713745},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.5458167791366577},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.4902932941913605},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.4821286201477051},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47094854712486267},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.46478793025016785},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.44237983226776123},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43726658821105957},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.3798125386238098},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3746715784072876},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3648816645145416},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3625922203063965},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34757065773010254},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.24574869871139526},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1675308644771576},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2015.2405932","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2015.2405932","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W2036961622","https://openalex.org/W2100954356","https://openalex.org/W2105339372","https://openalex.org/W2112116135","https://openalex.org/W2114519929","https://openalex.org/W2125700950","https://openalex.org/W2133201500","https://openalex.org/W2165093231","https://openalex.org/W2167326092","https://openalex.org/W2563365791","https://openalex.org/W2567600075","https://openalex.org/W3141663781","https://openalex.org/W3150129602","https://openalex.org/W6659650948","https://openalex.org/W6793047984"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W1970992322","https://openalex.org/W2372270451","https://openalex.org/W2370976371","https://openalex.org/W2394281553","https://openalex.org/W3004564537","https://openalex.org/W2382539836","https://openalex.org/W2792398527","https://openalex.org/W2134241135","https://openalex.org/W2371305626"],"abstract_inverted_index":{"This":[0,153],"paper":[1],"presents":[2],"highly":[3],"reliable":[4],"reference":[5,40,71,105,166],"bitline":[6,41,167],"bias":[7,42,106,168],"designs":[8],"for":[9],"64":[10,44],"Mb":[11,14,45,125],"and":[12,36,55,79],"128":[13,124],"chain":[15],"FeRAM\u2122.":[16],"The":[17,39,88,138,161],"hysteresis":[18],"shape":[19],"deformation":[20],"of":[21,33,43,53,94,150,178,188],"ferroelectric":[22,119],"capacitor":[23],"due":[24],"to":[25,49,64],"temperature":[26,76,115,136,143],"variation":[27],"causes":[28],"cell":[29,96,155,179],"signal":[30,97,156,180],"level":[31],"shifts":[32],"both":[34],"\u201c1\u201d":[35,54],"\u201c0\u201d":[37,56],"data.":[38],"chip":[46,126],"is":[47],"designed":[48],"keep":[50],"intermediate":[51],"value":[52],"data":[57],"at":[58,146],"any":[59],"operating":[60,129,171],"temperatures":[61],"from":[62],"-40\u00b0C":[63],"85\u00b0C":[65],"by":[66,99,158,182],"introducing":[67],"a":[68,103,123],"modified":[69],"band-gap":[70],"circuit":[72,107,140,163],"with":[73,112,169],"3":[74,113],"bit":[75,81,114],"coefficient":[77,116],"trimmers":[78,117],"6":[80],"digital-to-analog":[82],"converter":[83],"(DAC)":[84],"using":[85,118],"laser":[86],"fuses.":[87],"measured":[89],"result":[90],"shows":[91],"the":[92,109,142,186],"improvement":[93,177],"tail-to-tail":[95],"windows":[98,181],"\u00b122":[100],"mV.":[101,160],"Moreover,":[102],"new":[104],"called":[108],"\u201celevator":[110],"circuit\u201d":[111],"fuses":[120],"installed":[121],"in":[122,176,185],"compensates":[127],"array":[128,170],"voltage":[130,172],"VAA":[131,173],"fluctuation":[132],"as":[133,135],"well":[134],"variation.":[137],"elevator":[139,162],"enables":[141],"dependency":[144],"control":[145],"low":[147],"external":[148],"VDD":[149],"1.8":[151],"V.":[152],"improves":[154],"window":[157],"\u00b140":[159],"also":[164],"varies":[165],"variation,":[174],"resulting":[175],"\u00b144":[183],"mV":[184],"range":[187],"1.5":[189],"V":[190,192],"\u00b10.2":[191],"VAA.":[193]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}