{"id":"https://openalex.org/W2075221456","doi":"https://doi.org/10.1109/jssc.2014.2362842","title":"A 14 nm FinFET 128 Mb SRAM With V&lt;formula formulatype=\"inline\"&gt; &lt;tex Notation=\"TeX\"&gt;$_{\\rm MIN}$&lt;/tex&gt;&lt;/formula&gt; Enhancement Techniques for Low-Power Applications","display_name":"A 14 nm FinFET 128 Mb SRAM With V&lt;formula formulatype=\"inline\"&gt; &lt;tex Notation=\"TeX\"&gt;$_{\\rm MIN}$&lt;/tex&gt;&lt;/formula&gt; Enhancement Techniques for Low-Power Applications","publication_year":2014,"publication_date":"2014-10-31","ids":{"openalex":"https://openalex.org/W2075221456","doi":"https://doi.org/10.1109/jssc.2014.2362842","mag":"2075221456"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2014.2362842","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2362842","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025919348","display_name":"Taejoong Song","orcid":"https://orcid.org/0000-0003-2752-3138"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Taejoong Song","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036233456","display_name":"Woojin Rim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woojin Rim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040465673","display_name":"Jong Hoon Jung","orcid":"https://orcid.org/0000-0003-2631-7578"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jonghoon Jung","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032340064","display_name":"Gi-Yong Yang","orcid":"https://orcid.org/0009-0006-4204-5081"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Giyong Yang","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028740314","display_name":"Jaeho Park","orcid":"https://orcid.org/0000-0002-0213-8076"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeho Park","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108355631","display_name":"Sunghyun Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghyun Park","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100728952","display_name":"Yongho Kim","orcid":"https://orcid.org/0000-0001-7099-4336"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yongho Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101937877","display_name":"Kanghyun Baek","orcid":"https://orcid.org/0000-0002-8870-2298"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Hyun Baek","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110453437","display_name":"Sanghoon Baek","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sanghoon Baek","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109109439","display_name":"S.-Y. Oh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Kyu Oh","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026854336","display_name":"Jinsuk Jung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinsuk Jung","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084868865","display_name":"Sungbong Kim","orcid":"https://orcid.org/0000-0003-3082-349X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungbong Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055688853","display_name":"Gyuhong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyuhong Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100690350","display_name":"Jintae Kim","orcid":"https://orcid.org/0000-0003-2818-8618"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jintae Kim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088243482","display_name":"Youngkeun Lee","orcid":"https://orcid.org/0000-0001-8140-9673"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Youngkeun Lee","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109561054","display_name":"Sang-Pil Sim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Pil Sim","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113699188","display_name":"Jong Shik Yoon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong Shik Yoon","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015760089","display_name":"Kyu-Myung Choi","orcid":"https://orcid.org/0000-0001-8153-8344"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyu-Myung Choi","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067575589","display_name":"Hyo-Sig Won","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyosig Won","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100628913","display_name":"Jaehong Park","orcid":"https://orcid.org/0000-0003-2218-2178"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaehong Park","raw_affiliation_strings":["Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","Samsung Electronics Co., Ltd., Hwaseung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, Gyeonggi-do, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Samsung Electronics Co., Ltd., Hwaseung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":20,"corresponding_author_ids":["https://openalex.org/A5025919348"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":3.1928,"has_fulltext":false,"cited_by_count":59,"citation_normalized_percentile":{"value":0.9270832,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"50","issue":"1","first_page":"158","last_page":"169"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/notation","display_name":"Notation","score":0.6412762403488159},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3851792812347412},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3782278299331665},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.35872769355773926},{"id":"https://openalex.org/keywords/arithmetic","display_name":"Arithmetic","score":0.30214694142341614}],"concepts":[{"id":"https://openalex.org/C45357846","wikidata":"https://www.wikidata.org/wiki/Q2001982","display_name":"Notation","level":2,"score":0.6412762403488159},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3851792812347412},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3782278299331665},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.35872769355773926},{"id":"https://openalex.org/C94375191","wikidata":"https://www.wikidata.org/wiki/Q11205","display_name":"Arithmetic","level":1,"score":0.30214694142341614}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2014.2362842","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2362842","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4699999988079071,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1489111899","https://openalex.org/W1965287694","https://openalex.org/W2001044025","https://openalex.org/W2050462122","https://openalex.org/W2071159343","https://openalex.org/W2098688943","https://openalex.org/W2105470988","https://openalex.org/W2126898248","https://openalex.org/W2132357267","https://openalex.org/W2161555441","https://openalex.org/W2165720303","https://openalex.org/W2172203429","https://openalex.org/W2175366782","https://openalex.org/W3148792909","https://openalex.org/W6641439908","https://openalex.org/W6650673243","https://openalex.org/W6683982208","https://openalex.org/W6792905420"],"related_works":["https://openalex.org/W2338700700","https://openalex.org/W2345600497","https://openalex.org/W241866648","https://openalex.org/W2386767533","https://openalex.org/W2047454787","https://openalex.org/W1972349968","https://openalex.org/W2058171746","https://openalex.org/W2324899973","https://openalex.org/W2090686886","https://openalex.org/W4247610324"],"abstract_inverted_index":{"Two":[0],"128":[1,108,143],"Mb":[2,109,144],"dual-power-supply":[3],"SRAM":[4,46,111,169],"chips":[5],"are":[6,48],"fabricated":[7],"in":[8],"a":[9,30,70,78,90],"14":[10],"nm":[11],"FinFET":[12],"technology.":[13],"A":[14],"0.064":[15],"<formula":[16,23,32,39,59,96,118,133,154],"formulatype=\"inline\"":[17,24,33,40,60,97,119,134,155],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[18,25,34,41,61,98,120,135,156],"xmlns:xlink=\"http://www.w3.org/1999/xlink\"><tex":[19,26,35,42,62,99,121],"Notation=\"TeX\">$\\mu$</tex>":[20,36],"</formula>":[21,28,37,44],"m":[22,38],"Notation=\"TeX\">$^{2}$</tex>":[27,43],"and":[29,53,131,164],"0.080":[31],"6T":[45],"bitcells":[47],"designed":[49],"for":[50,141],"high-density":[51,68],"(HD)":[52],"high-performance":[54,105],"(HP)":[55],"applications.":[56],"To":[57],"improve":[58,94],"Notation=\"TeX\">${\\rm":[63,100,122,138,159],"V}_{{\\rm":[64,101,123,139,160],"MIN}}$</tex></formula>":[65,102,124,140,161],"of":[66,103,167,174],"the":[67,82,95,104,142,151,168,172],"SRAM,":[69],"negative":[71],"bitline":[72],"scheme":[73,86],"(NBL)":[74],"is":[75,87,113],"adopted":[76],"as":[77,89],"write-assist":[79],"technique.":[80],"Then,":[81],"disturbance-noise":[83],"reduction":[84],"(DNR)":[85],"proposed":[88],"read-assist":[91],"circuit":[92],"to":[93],"SRAM.":[106],"The":[107],"6T-HD":[110],"test-chip":[112],"fully":[114],"demonstrated":[115],"featuring":[116],"0.50":[117],"with":[125,146,171],"200":[126],"mV":[127,148],"improvement":[128,149],"by":[129,150],"NBL,":[130],"0.47":[132],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[136,157],"<tex":[137,158],"6T-HP":[145],"40":[147],"DNR.":[152],"Improved":[153],"reduces":[162],"45.4%":[163],"12.2%":[165],"power-consumption":[166],"macro":[170],"help":[173],"each":[175],"assist":[176],"circuit,":[177],"respectively.":[178]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":9},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":9},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":2}],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}