{"id":"https://openalex.org/W1979804960","doi":"https://doi.org/10.1109/jssc.2014.2352293","title":"Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming","display_name":"Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming","publication_year":2014,"publication_date":"2014-09-16","ids":{"openalex":"https://openalex.org/W1979804960","doi":"https://doi.org/10.1109/jssc.2014.2352293","mag":"1979804960"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2014.2352293","doi":"https://doi.org/10.1109/jssc.2014.2352293","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2352293","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004756226","display_name":"Kitae Park","orcid":"https://orcid.org/0000-0003-1786-0368","observed_orcids":["https://orcid.org/0000-0003-1786-0368"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki-Tae Park","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109491201","display_name":"Sang-Wan Nam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwan Nam","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101854134","display_name":"Daehan Kim","orcid":"https://orcid.org/0000-0002-7095-5000","observed_orcids":["https://orcid.org/0000-0002-7095-5000"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Daehan Kim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047840419","display_name":"Pansuk Kwak","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Pansuk Kwak","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003537625","display_name":"Doo-Sub Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doosub Lee","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110883104","display_name":"Yoon-He Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoon-He Choi","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108304234","display_name":"Myung-Hoon Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myung-Hoon Choi","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111994329","display_name":"Donghun Kwak","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Hun Kwak","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019936971","display_name":"Doo-Hyun Kim","orcid":"https://orcid.org/0000-0003-3153-5625","observed_orcids":["https://orcid.org/0000-0003-3153-5625"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doo-Hyun Kim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100343637","display_name":"Minsu Kim","orcid":"https://orcid.org/0000-0003-2675-1999","observed_orcids":["https://orcid.org/0000-0003-2675-1999"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-Su Kim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050974621","display_name":"Hyunwook Park","orcid":"https://orcid.org/0000-0001-9356-3635","observed_orcids":["https://orcid.org/0000-0001-9356-3635"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Wook Park","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050754857","display_name":"Sang-Won Shim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Won Shim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kyung-Min Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung-Min Kang","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100698580","display_name":"Sang-Won Park","orcid":"https://orcid.org/0000-0003-0354-6773","observed_orcids":["https://orcid.org/0000-0003-0354-6773"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang-Won Park","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060827903","display_name":"Kangbin Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kangbin Lee","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023290567","display_name":"Hyun-Jun Yoon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun-Jun Yoon","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020200929","display_name":"Kuihan Ko","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kuihan Ko","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036139219","display_name":"Dong-Kyo Shim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Kyo Shim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113536114","display_name":"Yang-Lo Ahn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yang-Lo Ahn","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103409015","display_name":"Jinho Ryu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Ryu","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100454647","display_name":"Donghyun Kim","orcid":"https://orcid.org/0000-0001-7130-0279","observed_orcids":["https://orcid.org/0000-0001-7130-0279"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Donghyun Kim","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060297664","display_name":"Kyunghwa Yun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyunghwa Yun","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022032185","display_name":"Joonsoo Kwon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joonsoo Kwon","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100564366","display_name":"Seunghoon Shin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seunghoon Shin","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109054902","display_name":"Dae-Seok Byeon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae-Seok Byeon","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009751739","display_name":"Kihwan Choi","orcid":"https://orcid.org/0000-0003-4724-0418","observed_orcids":["https://orcid.org/0000-0003-4724-0418"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kihwan Choi","raw_affiliation_strings":["Flash PE Team, Memory Business, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash PE Team, Memory Business, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109158104","display_name":"Jin-Man Han","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Man Han","raw_affiliation_strings":["Solution PE Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Solution PE Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112306635","display_name":"Kye-Hyun Kyung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kye-Hyun Kyung","raw_affiliation_strings":["Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Design Team, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110237110","display_name":"Jeong-Hyuk Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jeong-Hyuk Choi","raw_affiliation_strings":["Flash Product & Technology, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Flash Product & Technology, Memory Business, Samsung Electronics Co. Ltd., Hwaseong-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101769965","display_name":"Kinam Kim","orcid":"https://orcid.org/0000-0002-7517-588X","observed_orcids":["https://orcid.org/0000-0002-7517-588X"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kinam Kim","raw_affiliation_strings":["Samsung Electronics Co., Giheung-gu, Yongin-si, South Korea","Samsung Semicond., Hwasung, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics Co., Giheung-gu, Yongin-si, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Semicond., Hwasung, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":18.2056,"has_fulltext":false,"cited_by_count":285,"citation_normalized_percentile":{"value":0.99491964,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"50","issue":"1","first_page":"204","last_page":"213"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.4796999990940094,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.4796999990940094,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.41260001063346863,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.04749999940395355,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/3d-nand-flash-memory","display_name":"3D NAND flash memory","score":0.8410000205039978},{"id":"https://openalex.org/keywords/multi-level-cell","display_name":"multi-level cell","score":0.6000000238418579},{"id":"https://openalex.org/keywords/gate-all-around-structure","display_name":"gate-all-around structure","score":0.703000009059906},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.8489999771118164},{"id":"https://openalex.org/keywords/high-voltage-power-supply","display_name":"high-voltage power supply","score":0.8669999837875366},{"id":"https://openalex.org/keywords/write-throughput","display_name":"write throughput","score":0.5550000071525574},{"id":"https://openalex.org/keywords/endurance","display_name":"endurance","score":0.7179999947547913}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.8202314972877502},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5434037446975708},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.45964881777763367},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.45341452956199646},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.4511595666408539},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.4432760775089264},{"id":"https://openalex.org/C131584629","wikidata":"https://www.wikidata.org/wiki/Q4308705","display_name":"Coupling (piping)","level":2,"score":0.4135921001434326},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4127349257469177},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.3390635848045349},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33289384841918945},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.33232903480529785},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3277147710323334},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3176424503326416},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2929505407810211},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2873692512512207},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2649987041950226},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18155622482299805},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.1402566134929657},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12782102823257446},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2014.2352293","doi":"https://doi.org/10.1109/jssc.2014.2352293","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2352293","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W195313655","https://openalex.org/W1780870093","https://openalex.org/W1896946270","https://openalex.org/W2031964120","https://openalex.org/W2078540131","https://openalex.org/W2091668647","https://openalex.org/W2113143253","https://openalex.org/W2138643662","https://openalex.org/W2154368093","https://openalex.org/W2163552732","https://openalex.org/W6607918540","https://openalex.org/W6638243799","https://openalex.org/W6639751740","https://openalex.org/W6682504405"],"related_works":["https://openalex.org/W2385875016","https://openalex.org/W2054139911","https://openalex.org/W1577524679","https://openalex.org/W2162027152","https://openalex.org/W2386432552","https://openalex.org/W4230869547","https://openalex.org/W2489439822","https://openalex.org/W2355887979","https://openalex.org/W4285309357","https://openalex.org/W4237143391"],"abstract_inverted_index":{"In":[0,66],"this":[1],"work,":[2],"we":[3],"present":[4],"a":[5,56,61,73,77,82,101],"true":[6],"3D":[7,31],"128":[8],"Gb":[9],"2":[10],"bit/cell":[11],"vertical-NAND":[12],"(V-NAND)":[13],"Flash":[14],"product":[15],"for":[16,100,122,140],"the":[17,30,70,96],"first":[18],"time.":[19],"The":[20,111],"use":[21],"of":[22,72,129,137],"barrier-engineered":[23],"materials":[24],"and":[25,50,81,143],"gate":[26],"all-around":[27],"structure":[28],"in":[29],"V-NAND":[32],"cell":[33,48,64],"exhibits":[34],"advantages":[35],"over$1":[36],"\\times$nm":[37],"planar":[38],"NAND,":[39],"such":[40],"as":[41],"small":[42,47],"Vth":[43,53],"shift":[44],"due":[45],"to":[46,68,106],"coupling":[49],"narrow":[51],"natural":[52],"distribution.":[54,65],"Also,":[55,126],"negative":[57],"counter-pulse":[58],"scheme":[59,80,85,93,99],"realizes":[60],"tightly":[62],"programmed":[63],"order":[67],"reduce":[69],"effect":[71],"large":[74],"WL":[75],"coupling,":[76],"glitch-canceling":[78],"discharge":[79],"pre-offset":[83],"control":[84],"is":[86,104,132],"implemented.":[87],"Furthermore,":[88],"an":[89],"external":[90],"high-voltage":[91,102],"supply":[92],"along":[94],"with":[95,118,134],"proper":[97],"protection":[98],"failure":[103],"used":[105],"achieve":[107],"low":[108],"power":[109],"consumption.":[110],"chip":[112],"accomplishes":[113],"50":[114],"MB/s":[115,136],"write":[116,138],"throughput":[117,139],"3":[119],"K":[120,131],"endurance":[121,128],"typical":[123],"embedded":[124],"applications.":[125,146],"extended":[127],"35":[130],"achieved":[133],"36":[135],"data":[141],"center":[142],"enterprise":[144],"SSD":[145]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":14},{"year":2024,"cited_by_count":18},{"year":2023,"cited_by_count":22},{"year":2022,"cited_by_count":13},{"year":2021,"cited_by_count":33},{"year":2020,"cited_by_count":26},{"year":2019,"cited_by_count":27},{"year":2018,"cited_by_count":22},{"year":2017,"cited_by_count":33},{"year":2016,"cited_by_count":30},{"year":2015,"cited_by_count":31},{"year":2014,"cited_by_count":9}],"updated_date":"2026-10-08T09:06:37.294493","created_date":"2025-10-10T00:00:00"}