{"id":"https://openalex.org/W2058860917","doi":"https://doi.org/10.1109/jssc.2014.2319262","title":"A Highly Linear 1 GHz 1.3 dB NF CMOS Low-Noise Amplifier With Complementary Transconductance Linearization","display_name":"A Highly Linear 1 GHz 1.3 dB NF CMOS Low-Noise Amplifier With Complementary Transconductance Linearization","publication_year":2014,"publication_date":"2014-05-01","ids":{"openalex":"https://openalex.org/W2058860917","doi":"https://doi.org/10.1109/jssc.2014.2319262","mag":"2058860917"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2014.2319262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2319262","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072625034","display_name":"Bum-Kyum Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bum-Kyum Kim","raw_affiliation_strings":["Dept. of Electr. Eng., Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electr. Eng., Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028600024","display_name":"Donggu Im","orcid":"https://orcid.org/0000-0003-2892-6254"},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Donggu Im","raw_affiliation_strings":["Dept. of Electro. Eng., Chonbuk National University, Jeonju, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electro. Eng., Chonbuk National University, Jeonju, Republic of Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069814835","display_name":"Jaeyoung Choi","orcid":"https://orcid.org/0000-0001-9118-8050"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Jaeyoung Choi","raw_affiliation_strings":["Institute of Microelectronics, A*STAR, Singapore, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, A*STAR, Singapore, Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026323650","display_name":"Kwyro Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwyro Lee","raw_affiliation_strings":["Dept. of Electr. Eng., Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electr. Eng., Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.8301,"has_fulltext":false,"cited_by_count":66,"citation_normalized_percentile":{"value":0.93903869,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"49","issue":"6","first_page":"1286","last_page":"1302"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.6338114142417908},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.5952147841453552},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5256254076957703},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.5217441320419312},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.4802127778530121},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4797138571739197},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.477582722902298},{"id":"https://openalex.org/keywords/output-impedance","display_name":"Output impedance","score":0.4756980836391449},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4436121881008148},{"id":"https://openalex.org/keywords/linearization","display_name":"Linearization","score":0.43466752767562866},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.30853742361068726},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3049139678478241},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29639387130737305},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.27945810556411743},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2713037133216858},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.13509303331375122}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.6338114142417908},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.5952147841453552},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5256254076957703},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.5217441320419312},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.4802127778530121},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4797138571739197},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.477582722902298},{"id":"https://openalex.org/C58112919","wikidata":"https://www.wikidata.org/wiki/Q631203","display_name":"Output impedance","level":3,"score":0.4756980836391449},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4436121881008148},{"id":"https://openalex.org/C11210021","wikidata":"https://www.wikidata.org/wiki/Q1520713","display_name":"Linearization","level":3,"score":0.43466752767562866},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.30853742361068726},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3049139678478241},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29639387130737305},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.27945810556411743},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2713037133216858},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.13509303331375122},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2014.2319262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2014.2319262","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6600000262260437,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1483625982","https://openalex.org/W1518120160","https://openalex.org/W1944674657","https://openalex.org/W1975239537","https://openalex.org/W1991722653","https://openalex.org/W2003759426","https://openalex.org/W2013064817","https://openalex.org/W2063140866","https://openalex.org/W2073741730","https://openalex.org/W2078269407","https://openalex.org/W2089674485","https://openalex.org/W2103960891","https://openalex.org/W2109309394","https://openalex.org/W2113831560","https://openalex.org/W2118016613","https://openalex.org/W2118790107","https://openalex.org/W2129245944","https://openalex.org/W2130899131","https://openalex.org/W2136178387","https://openalex.org/W2141242995","https://openalex.org/W2142243418","https://openalex.org/W2143948542","https://openalex.org/W2144546776","https://openalex.org/W2144968876","https://openalex.org/W2146167262","https://openalex.org/W2148789056","https://openalex.org/W2151088092","https://openalex.org/W4252513696","https://openalex.org/W6679323043","https://openalex.org/W6682149433"],"related_works":["https://openalex.org/W2382937231","https://openalex.org/W2064881384","https://openalex.org/W3000916362","https://openalex.org/W2024400826","https://openalex.org/W2515952003","https://openalex.org/W2151988453","https://openalex.org/W2010358330","https://openalex.org/W2366126408","https://openalex.org/W2289698412","https://openalex.org/W2551698344"],"abstract_inverted_index":{"A":[0],"highly":[1],"linear":[2],"LNA":[3,93],"is":[4,89],"implemented":[5],"in":[6,58],"a":[7,33,49,79,95,131,141,145],"0.18":[8],"\u03bcm":[9],"SOI":[10],"CMOS":[11],"process":[12],"for":[13],"1":[14,64,102,127],"GHz":[15,128],"SAW-less":[16],"receiver":[17],"applications.":[18],"To":[19],"achieve":[20],"lower":[21],"noise":[22,28,38],"figure":[23],"(NF)":[24],"than":[25],"conventional":[26],"simultaneous":[27,37],"and":[29,39,70,87,110,121],"input":[30,40],"matching":[31,41],"methods,":[32],"capacitive":[34],"loading":[35],"based":[36],"technique":[42],"reducing":[43],"the":[44,63,71],"NF":[45,122],"degradation":[46],"coming":[47],"from":[48,144],"lossy":[50],"gate":[51],"inductor":[52],"has":[53],"been":[54],"devised.":[55],"In":[56],"addition,":[57],"order":[59],"to":[60],"improve":[61],"both":[62],"dB":[65,103,120,125],"gain":[66,117],"compression":[67],"point":[68,74,105],"(CP1dB)":[69],"third-order":[72],"intercept":[73],"(IP3)":[75],"without":[76],"sacrificing":[77],"NF,":[78],"large-signal":[80],"transconductance":[81],"linearization":[82],"method":[83],"adopting":[84],"body-bias":[85],"control":[86],"complementary-superposition":[88],"proposed.":[90],"The":[91],"proposed":[92],"shows":[94],"measured":[96],"input-referred":[97],"CP1dB":[98],"of":[99,107,113,118,123],"3":[100],"dBm,":[101],"desensitization":[104],"(B1dB)":[106],"0":[108],"dBm":[109,115],"IB":[111],"(in-band)-IIP3":[112],"22":[114],"with":[116,140],"10.7":[119],"1.3":[124],"at":[126],"while":[129],"driving":[130],"50":[132],"\u03a9":[133],"load":[134],"impedance.":[135],"It":[136],"draws":[137],"20":[138],"mA":[139],"buffer":[142],"stage":[143],"2.5":[146],"V":[147],"supply":[148],"voltage.":[149]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":7}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}