{"id":"https://openalex.org/W1988211538","doi":"https://doi.org/10.1109/jssc.2013.2272338","title":"A Process-Variation-Tolerant On-Chip CMOS Thermometer for Auto Temperature Compensated Self-Refresh of Low-Power Mobile DRAM","display_name":"A Process-Variation-Tolerant On-Chip CMOS Thermometer for Auto Temperature Compensated Self-Refresh of Low-Power Mobile DRAM","publication_year":2013,"publication_date":"2013-07-24","ids":{"openalex":"https://openalex.org/W1988211538","doi":"https://doi.org/10.1109/jssc.2013.2272338","mag":"1988211538"},"language":"en","primary_location":{"id":"doi:10.1109/jssc.2013.2272338","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2013.2272338","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032880274","display_name":"Daeyong Shim","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Daeyong Shim","raw_affiliation_strings":["SK Hynix, Icheon, Korea","SK hynix, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"SK Hynix, Icheon, Korea","institution_ids":["https://openalex.org/I134353371"]},{"raw_affiliation_string":"SK hynix, Icheon, South Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076705951","display_name":"Hyunsik Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I134353371","display_name":"SK Group (South Korea)","ror":"https://ror.org/03696td91","country_code":"KR","type":"company","lineage":["https://openalex.org/I134353371"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunsik Jeong","raw_affiliation_strings":["SK Hynix, Icheon, Korea","SK hynix, Icheon, South Korea"],"affiliations":[{"raw_affiliation_string":"SK Hynix, Icheon, Korea","institution_ids":["https://openalex.org/I134353371"]},{"raw_affiliation_string":"SK hynix, Icheon, South Korea","institution_ids":["https://openalex.org/I134353371"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069580722","display_name":"Hyunjoong Lee","orcid":"https://orcid.org/0000-0002-9678-7201"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunjoong Lee","raw_affiliation_strings":["Department of Electrical Engineering, Seoul National University, Seoul, Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069904203","display_name":"Jooyeol Rhee","orcid":"https://orcid.org/0000-0002-2961-4925"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jooyeol Rhee","raw_affiliation_strings":["Department of Electrical Engineering, Seoul National University, Seoul, Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008010401","display_name":"Deog\u2010Kyoon Jeong","orcid":"https://orcid.org/0000-0003-0436-703X"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Deog-Kyoon Jeong","raw_affiliation_strings":["Department of Electrical Engineering, Seoul National University, Seoul, Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080332152","display_name":"Suhwan Kim","orcid":"https://orcid.org/0000-0001-9107-2963"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suhwan Kim","raw_affiliation_strings":["Department of Electrical Engineering, Seoul National University, Seoul, Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5032880274"],"corresponding_institution_ids":["https://openalex.org/I134353371"],"apc_list":null,"apc_paid":null,"fwci":3.3974,"has_fulltext":false,"cited_by_count":39,"citation_normalized_percentile":{"value":0.91900033,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"48","issue":"10","first_page":"2550","last_page":"2557"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.837195873260498},{"id":"https://openalex.org/keywords/thermometer","display_name":"Thermometer","score":0.8240238428115845},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6784434914588928},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.654517650604248},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5492616891860962},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.5346217751502991},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.5346063375473022},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.4973023235797882},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.4834947884082794},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47193190455436707},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4316038489341736},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4172337055206299},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3826507031917572},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.33098310232162476},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2092469036579132},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.17404064536094666},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16022688150405884},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15339577198028564}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.837195873260498},{"id":"https://openalex.org/C2777155165","wikidata":"https://www.wikidata.org/wiki/Q646","display_name":"Thermometer","level":2,"score":0.8240238428115845},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6784434914588928},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.654517650604248},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5492616891860962},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.5346217751502991},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.5346063375473022},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.4973023235797882},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.4834947884082794},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47193190455436707},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4316038489341736},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4172337055206299},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3826507031917572},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.33098310232162476},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2092469036579132},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.17404064536094666},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16022688150405884},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15339577198028564},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/jssc.2013.2272338","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jssc.2013.2272338","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8600000143051147,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W2055944305","https://openalex.org/W2064189791","https://openalex.org/W2074293309","https://openalex.org/W2080966025","https://openalex.org/W2099069607","https://openalex.org/W2102362948","https://openalex.org/W2105628848","https://openalex.org/W2113683040","https://openalex.org/W2123516803","https://openalex.org/W2127016647","https://openalex.org/W2133372451","https://openalex.org/W2135348981","https://openalex.org/W2135927782","https://openalex.org/W2138935288","https://openalex.org/W2149483010","https://openalex.org/W2163523513","https://openalex.org/W2171338309","https://openalex.org/W2171702041","https://openalex.org/W2243540610","https://openalex.org/W4247586331"],"related_works":["https://openalex.org/W2148931973","https://openalex.org/W2544401233","https://openalex.org/W2003827896","https://openalex.org/W2119657528","https://openalex.org/W2794849846","https://openalex.org/W2099129512","https://openalex.org/W1995667718","https://openalex.org/W2049017294","https://openalex.org/W2033741460","https://openalex.org/W1988211538"],"abstract_inverted_index":{"Smaller":[0],"transistors":[1],"mean":[2],"that":[3],"capacitors":[4],"are":[5],"charged":[6],"less":[7,147],"uniformly,":[8],"which":[9,54,121],"increases":[10],"the":[11,15,41,99,103,115,122,167,171],"self-refresh":[12,22],"current":[13,169],"in":[14,18,69,124],"DRAMs":[16],"used":[17],"mobile":[19],"devices.":[20],"Adaptive":[21],"using":[23],"an":[24,33,61,136],"on-chip":[25,34],"thermometer":[26,36,48,165],"can":[27],"solve":[28],"this":[29,164],"problem.":[30],"We":[31],"propose":[32],"CMOS":[35],"specifically":[37],"designed":[38],"for":[39],"controlling":[40],"refresh":[42],"period":[43],"of":[44,80,86,102,114,139,156,170],"a":[45,50,70,77,84,154],"DRAM.":[46],"This":[47],"includes":[49],"novel":[51],"temperature":[52,78],"sensor":[53,75,116,134],"has":[55,76,135],"been":[56],"implemented":[57],"and":[58,94,131,145],"integrated":[59],"into":[60],"LPDDR2":[62,65,172],"chip.":[63],"The":[64,74,112,133],"chip":[66,173],"is":[67,92,95],"fabricated":[68],"44-nm":[71],"DRAM":[72],"process.":[73],"sensitivity":[79],"-3.2":[81],"mV/\u00b0C,":[82],"over":[83],"range":[85],"0\u00b0C":[87],"to":[88],"110\u00b0C.":[89],"Its":[90],"resolution":[91],"1.94\u00b0C":[93],"only":[96],"limited":[97],"by":[98,108,174],"6.2-mV":[100],"step":[101],"associated":[104],"resistor":[105],"ladder":[106],"not":[107],"its":[109,160],"own":[110],"design.":[111],"linearity":[113],"permits":[117],"one-point":[118],"calibration,":[119],"after":[120],"errors":[123],"61":[125],"sample":[126],"circuits":[127],"ranged":[128],"between":[129],"-1.42\u00b0C":[130],"+2.66\u00b0C.":[132],"active":[137],"area":[138],"0.001725":[140],"mm":[141],"<sup":[142],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[143],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[144],"consumes":[146],"than":[148],"0.36":[149],"\u03bcW":[150],"on":[151],"average":[152],"with":[153],"supply":[155],"1.1":[157],"V.":[158],"At":[159],"lowest":[161],"operating":[162],"temperature,":[163],"reduces":[166],"IDD6":[168],"almost":[175],"half.":[176]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}